Amplifier Transistor PNP

P2N2907A
Amplifier Transistor
PNP Silicon
Features
• These are Pb--Free Devices*
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector--Emitter Voltage
VCEO
--60
Vdc
Collector--Base Voltage
VCBO
--60
Vdc
Emitter--Base Voltage
VEBO
--5.0
Vdc
Collector Current -- Continuous
IC
--600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
--55 to
+150
°C
Operating and Storage Junction
Temperature Range
2
BASE
3
EMITTER
TO--92
CASE 29
STYLE 17
1
12
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
200
°C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P2N2
907A
AYWW G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
P2N2907AG
TO--92
(Pb--Free)
5000 Units / Bulk
P2N2907ARL1G
TO--92
(Pb--Free)
2000 / Tape & Reel
Device
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 6
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2907A/D
P2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
--60
--
--60
--
--5.0
--
--
--50
---
--0.01
--10
--
--10
--
--10
--
--50
75
100
100
100
50
---300
--
---
--0.4
--1.6
---
--1.3
--2.6
200
--
--
8.0
--
30
ton
--
50
ns
td
--
10
ns
tr
--
40
ns
toff
--
110
ns
ts
--
80
ns
tf
--
30
ns
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage (Note 1)
(IC = --10 mAdc, IB = 0)
V(BR)CEO
Collector--Base Breakdown Voltage
(IC = --10 mAdc, IE = 0)
V(BR)CBO
Emitter--Base Breakdown Voltage
(IE = --10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = --30 Vdc, VEB(off) = --0.5 Vdc)
ICEX
Collector Cutoff Current
(VCB = --50 Vdc, IE = 0)
(VCB = --50 Vdc, IE = 0, TA = 150°C)
ICBO
Emitter Cutoff Current
(VEB = --3.0 Vdc)
IEBO
Collector Cutoff Current
(VCE = --10 V)
ICEO
Base Cutoff Current
(VCE = --30 Vdc, VEB(off) = --0.5 Vdc)
IBEX
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = --0.1 mAdc, VCE = --10 Vdc)
(IC = --1.0 mAdc, VCE = --10 Vdc)
(IC = --10 mAdc, VCE = --10 Vdc)
(IC = --150 mAdc, VCE = --10 Vdc) (Note 1)
(IC = --500 mAdc, VCE = --10 Vdc) (Note 1)
hFE
Collector--Emitter Saturation Voltage (Note 1)
(IC = --150 mAdc, IB = --15 mAdc)
(IC = --500 mAdc, IB = --50 mAdc)
VCE(sat)
Base--Emitter Saturation Voltage (Note 1)
(IC = --150 mAdc, IB = --15 mAdc)
(IC = --500 mAdc, IB = --50 mAdc)
VBE(sat)
--
Vdc
Vdc
SMALL--SIGNAL CHARACTERISTICS
Current--Gain -- Bandwidth Product (Notes 1 and 2)
(IC = --50 mAdc, VCE = --20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = --10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = --2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
MHz
pF
pF
SWITCHING CHARACTERISTICS
Turn--On Time
Delay Time
Rise Time
(VCC = --30 Vdc, IC = --150 mAdc,
IB1 = --15 mAdc) (Figures 1 and 5)
Turn--Off Time
Storage Time
Fall Time
(VCC = --6.0 Vdc, IC = --150 mAdc,
IB1 = IB2 = --15 mAdc) (Figure 2)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
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2
P2N2907A
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
200
1.0 k
0
50
--16 V
INPUT
Zo = 50 Ω
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
--30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V
--6.0 V
1.0 k
1.0 k
0
--30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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3
P2N2907A
TYPICAL CHARACTERISTICS
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = --1.0 V
VCE = --10 V
2.0
TJ = 125°C
25°C
1.0
--55°C
0.7
0.5
0.3
0.2
--0.1
--0.2 --0.3
--0.5 --0.7 --1.0
--2.0
--3.0
--5.0 --7.0
--10
--20
--30
--50 --70 --100
--200 --300 --500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR--EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
--1.0
--0.8
IC = --1.0 mA
--10 mA
--100 mA
--500 mA
--0.6
--0.4
--0.2
0
--0.005
--0.01
--0.02 --0.03 --0.05 --0.07 --0.1
--0.2
--0.3
--0.5 --0.7 --1.0
--2.0
--3.0
--5.0 --7.0 --10
--20
--30
--50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = --30 V
IC/IB = 10
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
30
20
td @ VBE(off) = 0 V
3.0
--5.0 --7.0 --10
30
10
7.0
5.0
--5.0 --7.0 --10
2.0 V
--20 --30
--50 --70 --100
IC, COLLECTOR CURRENT
tf
100
70
50
t′s = ts -- 1/8 tf
20
10
7.0
5.0
VCC = --30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
--200 --300 --500
Figure 5. Turn--On Time
--20 --30
--50 --70 --100
--200 --300 --500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn--Off Time
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4
P2N2907A
TYPICAL SMALL--SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = --1.0 mA, Rs = 430 Ω
--500 mA, Rs = 560 Ω
--50 mA, Rs = 2.7 kΩ
--100 mA, Rs = 1.6 kΩ
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
20
C, CAPACITANCE (pF)
IC = --50 mA
--100 mA
--500 mA
--1.0 mA
4.0
0
100
30
Ceb
10
7.0
5.0
Ccb
3.0
2.0
--0.1
6.0
2.0
f T, CURRENT--GAIN — BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
--0.2 --0.3 --0.5
--1.0
--2.0 --3.0 --5.0
--10
--20
--30
50 k
400
300
200
100
80
VCE = --20 V
TJ = 25°C
60
40
30
20
--1.0 --2.0
--5.0
--10
--20
--50
--100 --200
--500 --1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current--Gain -- Bandwidth Product
+0.5
--1.0
V, VOLTAGE (VOLTS)
--0.6
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/ ° C)
TJ = 25°C
--0.8
VBE(on) @ VCE = --10 V
--0.4
--0.2
--0.5 --1.0 --2.0 --5.0 --10 --20
--0.5
--1.0
--1.5
RθVB for VBE
--2.0
VCE(sat) @ IC/IB = 10
0
--0.1 --0.2
RθVC for VCE(sat)
--50 --100 --200
--2.5
--0.1 --0.2 --0.5 --1.0 --2.0
--500
--5.0 --10 --20
--50 --100 --200 --500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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5
P2N2907A
PACKAGE DIMENSIONS
TO--92 (TO--226)
CASE 29--11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
1
SECTION X--X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
-----0.250
-----0.080
0.105
-----0.100
0.115
-----0.135
------
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
-----6.35
-----2.04
2.66
-----2.54
2.93
-----3.43
------
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
T
SEATING
PLANE
G
K
D
X X
J
V
1
C
N
SECTION X--X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
-----2.04
2.66
1.50
4.00
2.93
-----3.43
-----STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your local
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P2N2907A/D
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