500 mA, 40 V Schottky Barrier Diode

NSR05T40P2
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
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Features
•
•
•
•
•
•
Low Forward Voltage Drop − 580 mV (Typ.) @ IF = 500 mA
Low Reverse Current − 2.0 mA (Typ.) @ VR = 40 V
500 mA of Continuous Forward Current
ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
2
1
SOD−923
CASE 514AA
1
YK MG
G
2
YK = Specific Device Code
M = Month Code
G = Pb−Free Package
Typical Applications
•
•
•
•
•
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
1
CATHODE
ORDERING INFORMATION
Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
V
Forward Current (DC)
IF
500
mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
3.0
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
1.0
A
ESD Rating:
ESD
>8
>1
kV
Human Body Model
Charged Device Model
2
ANODE
Package
NSR05T40P2T5G SOD−923
(Pb−Free)
Shipping†
2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
Publication Order Number:
NSR05T40P2/D
NSR05T40P2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Symbol
Junction and Storage Temperature Range
Min
Max
Unit
RqJA
PD
345
360
°C/W
mW
RqJA
PD
175
715
°C/W
mW
TJ, Tstg
Typ
°C
−55 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
D = 0.5
R(t) (C/W)
100
0.2
0.1
0.05
10
0.02
0.01
SINGLE PULSE
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
1.0
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
1000
D = 0.5
R(t) (C/W)
100
0.2
0.1
0.05
10
0.02
0.01
SINGLE PULSE
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR05T40P2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
0.2
2.0
5.0
55
360
450
490
580
410
500
550
700
Unit
mA
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
(IF = 500 mA)
VF
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
29
pF
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3)
trr
8.0
ns
VFRM
560
mV
Peak Forward Recovery Voltage
(IF = 100 mA, tr = 20 ns, Figure 4)
mV
820 W
+10 V
2.0 k
100 mH
IF
tp
tr
0.1 mF
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
50 W OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 3. Recovery Time Equivalent Test Circuit
IF
VF
tr
VFRM
VF
Time
Time
Figure 4. Peak Forward Recovery Voltage Definition
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3
NSR05T40P2
TYPICAL CHARACTERISTICS
1000
Ir, REVERSE CURRENT (mA)
100
150°C
10
125°C
1
75°C
0.1
25°C
0.01
−25°C
1
75°C
0.1
25°C
0.01
0.001
−25°C
0.0001
−55°C
0.00001
0
0.2
0.1
0.3
0.4
0.6
0.5
15
20
25
30
Figure 5. Forward Voltage
Figure 6. Leakage Current
PF, AVERAGE REVERSE POWER (mW)
0.8
0.5
0.2
0.1
10
1
0.1
35
40
35
40
100
1.0
0.8
0.5
0.2
0.1
10
1
0.1
0.01
0.001
0
100 150 200 250 300 350 400 450 500
5
10
15
20
25
30
IF, FORWARD CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
40
f = 1.0 MHz
35
30
25
20
15
10
5
0
0
10
VR, REVERSE VOLTAGE (V)
1.0
50
5
VF, FORWARD VOLTAGE (V)
100
0
0
0.7
1000
PF, AVERAGE FORWARD POWER (mW)
125°C
10
−55°C
0.001
CT, TOTAL CAPACITANCE (pF)
150°C
100
IFSM, FORWARD SURGE MAX CURRENT (A)
IF, FORWARD CURRENT (mA)
1000
5
10
15
20
25
30
35
40
45
12
Based on square wave currents
TJ = 25°C prior to surge
10
8
6
4
2
0
0.001
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
tP, PULSE ON TIME (ms)
Figure 9. Total Capacitance
Figure 10. Forward Surge Current
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4
1000
NSR05T40P2
PACKAGE DIMENSIONS
SOD−923
CASE 514AA
ISSUE E
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
E
1
2X b
0.08 X Y
2
TOP VIEW
DIM
A
b
c
D
E
HE
L
L2
A
c
HE
MILLIMETERS
MIN
NOM MAX
0.34
0.39
0.43
0.15
0.20
0.25
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
INCHES
MIN
NOM MAX
0.013 0.015 0.017
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
0.002 0.004 0.006
SIDE VIEW
SOLDERING FOOTPRINT*
2X
L
2X
0.36
2X
L2
1.20
2X
0.25
PACKAGE
OUTLINE
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
See Application Note AND8455/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NSR05T40P2/D
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