NSR05T40P2 500 mA, 40 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. www.onsemi.com Features • • • • • • Low Forward Voltage Drop − 580 mV (Typ.) @ IF = 500 mA Low Reverse Current − 2.0 mA (Typ.) @ VR = 40 V 500 mA of Continuous Forward Current ESD Rating: − Human Body Model: Class 3B − Charged Device Model: Class IV High Switching Speed These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM 2 1 SOD−923 CASE 514AA 1 YK MG G 2 YK = Specific Device Code M = Month Code G = Pb−Free Package Typical Applications • • • • • LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 CATHODE ORDERING INFORMATION Device MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Current (DC) IF 500 mA Forward Surge Current (60 Hz @ 1 cycle) IFSM 3.0 A Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 1.0 A ESD Rating: ESD >8 >1 kV Human Body Model Charged Device Model 2 ANODE Package NSR05T40P2T5G SOD−923 (Pb−Free) Shipping† 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 1 1 Publication Order Number: NSR05T40P2/D NSR05T40P2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Max Unit RqJA PD 345 360 °C/W mW RqJA PD 175 715 °C/W mW TJ, Tstg Typ °C −55 to +150 1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 1000 D = 0.5 R(t) (C/W) 100 0.2 0.1 0.05 10 0.02 0.01 SINGLE PULSE 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 1.0 10 100 1000 PULSE TIME (sec) Figure 1. Thermal Response (Note 1) 1000 D = 0.5 R(t) (C/W) 100 0.2 0.1 0.05 10 0.02 0.01 SINGLE PULSE 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 NSR05T40P2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 0.2 2.0 5.0 55 360 450 490 580 410 500 550 700 Unit mA Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) (IF = 500 mA) VF Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT 29 pF Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3) trr 8.0 ns VFRM 560 mV Peak Forward Recovery Voltage (IF = 100 mA, tr = 20 ns, Figure 4) mV 820 W +10 V 2.0 k 100 mH IF tp tr 0.1 mF t IF trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 3. Recovery Time Equivalent Test Circuit IF VF tr VFRM VF Time Time Figure 4. Peak Forward Recovery Voltage Definition www.onsemi.com 3 NSR05T40P2 TYPICAL CHARACTERISTICS 1000 Ir, REVERSE CURRENT (mA) 100 150°C 10 125°C 1 75°C 0.1 25°C 0.01 −25°C 1 75°C 0.1 25°C 0.01 0.001 −25°C 0.0001 −55°C 0.00001 0 0.2 0.1 0.3 0.4 0.6 0.5 15 20 25 30 Figure 5. Forward Voltage Figure 6. Leakage Current PF, AVERAGE REVERSE POWER (mW) 0.8 0.5 0.2 0.1 10 1 0.1 35 40 35 40 100 1.0 0.8 0.5 0.2 0.1 10 1 0.1 0.01 0.001 0 100 150 200 250 300 350 400 450 500 5 10 15 20 25 30 IF, FORWARD CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 7. Average Forward Power Dissipation Figure 8. Average Reverse Power Dissipation 40 f = 1.0 MHz 35 30 25 20 15 10 5 0 0 10 VR, REVERSE VOLTAGE (V) 1.0 50 5 VF, FORWARD VOLTAGE (V) 100 0 0 0.7 1000 PF, AVERAGE FORWARD POWER (mW) 125°C 10 −55°C 0.001 CT, TOTAL CAPACITANCE (pF) 150°C 100 IFSM, FORWARD SURGE MAX CURRENT (A) IF, FORWARD CURRENT (mA) 1000 5 10 15 20 25 30 35 40 45 12 Based on square wave currents TJ = 25°C prior to surge 10 8 6 4 2 0 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) tP, PULSE ON TIME (ms) Figure 9. Total Capacitance Figure 10. Forward Surge Current www.onsemi.com 4 1000 NSR05T40P2 PACKAGE DIMENSIONS SOD−923 CASE 514AA ISSUE E −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 1 2X b 0.08 X Y 2 TOP VIEW DIM A b c D E HE L L2 A c HE MILLIMETERS MIN NOM MAX 0.34 0.39 0.43 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 INCHES MIN NOM MAX 0.013 0.015 0.017 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 SIDE VIEW SOLDERING FOOTPRINT* 2X L 2X 0.36 2X L2 1.20 2X 0.25 PACKAGE OUTLINE BOTTOM VIEW DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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