Silicon Tuning Diode

MMBV432LT1
Preferred Device
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control
and tuning, or any top−of−the−line application requiring
back−to−back diode configuration for minimum signal distortion and
detuning. This device is supplied in the SOT−23 plastic package for
high volume, pick and place assembly requirements.
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Features
•
•
•
•
•
•
•
High Figure of Merit − Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz
Guaranteed Capacitance Range
Dual Diodes − Save Space and Reduce Cost
Surface Mount Package
Available in 8 mm Tape and Reel
Monolithic Chip Provides Improved Matching −
Guaranteed ±1.0% (Max) Over Specified Tuning Range
Pb−Free Package is Available
DUAL VOLTAGE VARIABLE
CAPACITANCE DIODE
1
2
3
3
MAXIMUM RATINGS (Each Diode)
Rating
1
Symbol
Value
Unit
Reverse Voltage
VR
14
Vdc
Forward Current
IF
200
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg
−55 to +125
°C
2
SOT−23 (TO−236)
CASE 318
STYLE 9
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
M4B M G
G
1
M4B = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBV432LT1
SOT−23
3,000 / Tape & Reel
MMBV432LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
MMBV432LT1/D
MMBV432LT1
ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
14
−
−
Vdc
Reverse Voltage Leakage Current
(VR = 9.0 Vdc)
IR
−
−
100
nAdc
Diode Capacitance
(VR = 2.0 Vdc, f = 1.0 MHz)
CT
43
−
48.1
pF
Capacitance Ratio C2/C8
(f = 1.0 MHz)
CR
1.5
−
2.0
−
Figure of Merit
(VR = 2.0 Vdc, f = 100 MHz)
Q
100
150
−
−
Reverse Breakdown Voltage
(IR = 10 mAdc)
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2
MMBV432LT1
TYPICAL CHARACTERISTICS (Each Diode)
550
70
Q, FIGURE OF MERIT
CT , DIODE CAPACITANCE (pF)
100
50
30
f = 1.0 MHz
TA = 25°C
20
350
250
TA = 25°C
f = 100 MHz
150
10
2
1
3
5
7
50
10
4
6
10
8
Figure 1. Diode Capacitance
Figure 2. Figure of Merit versus Voltage
CT , DIODE CAPACITANCE (NORMALIZED)
VR = 2.0 Vdc
TA = 25°C
500
200
100
50
20
2
VR, REVERSE VOLTAGE (VOLTS)
1000
30
50 70 100
1.06
1.04
VR = 2.0 Vdc
1.02
VR = 4.0 Vdc
1.00
0.98
f = 1.0 MHz
0.96
−75
200 300
−50
−25
0
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Figure of Merit versus Frequency
Figure 4. Diode Capacitance versus Temperature
10
TA = 125°C
5
I R , REVERSE CURRENT (nA)
20
10
0
VR, REVERSE VOLTAGE (VOLTS)
2000
Q, FIGURE OF MERIT
450
2
1
0.5
TA = 75°C
0.2
0.1
0.05
TA = 25°C
0.02
0.01
0
2
4
6
8
10
12
14
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
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3
MMBV432LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Email: [email protected]
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For additional information, please contact your
local Sales Representative.
MMBV432LT1/D