Silicon Tuning Diodes

MMBV409LT1
Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid−state
reliability in replacement of mechanical tuning methods.
Features
•
•
•
•
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High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Pb−Free Package is Available
3
Cathode
1
Anode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
20
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation @ TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 8
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MARKING DIAGRAM
X5 M G
G
1
X5 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
MMBV409LT1
SOT−23
3,000 / Tape & Reel
MMBV409LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
Publication Order Number:
MMBV409LT1/D
MMBV409LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
20
−
−
Vdc
IR
−
−
0.1
mAdc
TCC
−
300
−
ppm/°C
Reverse Breakdown Voltage
(IR = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C8
f = 1.0 MHz (Note 1)
Min
Nom
Max
Min
Min
Max
26
29
32
200
1.5
1.9
MMBV409LT1
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
TYPICAL CHARACTERISTICS
Q, FIGURE OF MERIT
32
f = 1.0 MHz
TA = 25°C
24
16
VR = 3 Vdc
TA = 25°C
100
8
0
I R , REVERSE CURRENT (nA)
1000
1
2
3
10
20
30
10
100
1000
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
VR = 15 Vdc
2.0
1.0
0.6
0.2
0.1
0.06
−40
100
f, FREQUENCY (MHz)
100
60
20
10
6.0
0.02
0.01
0.006
0.002
0.001
−60
10
VR, REVERSE VOLTAGE (VOLTS)
C t , DIODE CAPACITANCE (NORMALIZED)
C T, DIODE CAPACITANCE (pF)
40
−20
0
+20
+40
+60
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
+80 +100 +120 +140
VR = 3.0 Vdc
f = 1.0 MHz
−50
−25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
Figure 4. Diode Capacitance
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2
+100
+125
MMBV409LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
Email: [email protected]
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3
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For additional information, please contact your
local Sales Representative.
MMBV409LT1/D