Silicon Tuning Diode

MMBV809LT1
Preferred Device
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid−state reliability in replacement of
mechanical tuning methods.
Features
•
•
•
•
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Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Available in 8 mm Tape and Reel
Pb−Free Packages are Available
4.5−6.1 pF VOLTAGE VARIABLE
CAPACITANCE DIODE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
20
Vdc
Forward Current
IF
20
mAdc
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Junction Temperature
Storage Temperature Range
Reverse Voltage
225
1.8
mW
mW/°C
TJ
+125
°C
Tstg
−55 to +125
°C
1
ANODE
3
3
CATHODE
SOT−23 (TO−236)
CASE 318
STYLE 8
1
2
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 Board 1.0 x 0.75 x 0.62 in.
5K M G
G
1
5K = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Shipping †
Device
Package
MMBV809LT1
SOT−23
3,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
10,000 / Tape & Reel
MMBV809LT1G
MMBV809LT3
MMBV809LT3G
SOT−23 10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
MMBV809LT1/D
MMBV809LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic − All Types
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
Min
Typ
Max
Unit
V(BR)R
20
−
−
Vdc
IR
−
−
50
nAdc
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
MMBV809LT1
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz (Note 2)
Min
Typ
Max
Typ
Min
Max
4.5
5.3
6.1
75
1.8
2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
TYPICAL CHARACTERISTICS
10
1000
CT , DIODE CAPACITANCE (pF)
9
Q, FIGURE OF MERIT
8
7
6
5
4
3
VR = 3 Vdc
TA = 25°C
100
2
1
0
0.5
1
2
3
4
5
8
10
10
0.1
15
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
R S , SERIES RESISTANCE (MHz)
VR = 3.0 Vdc
f = 1.0 MHz
800
600
0
10
f, FREQUENCY (GHz)
1000
400
1.0
VR, REVERSE VOLTAGE (VOLTS)
0.2
0.4
0.6
0.8
1.0
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
1.2
VR = 3.0 Vdc
f = 1.0 MHz
f, FREQUENCY (GHz)
−50
−25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Series Resistance
Figure 4. Diode Capacitance
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2
+100
+125
MMBV809LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
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3
ON Semiconductor Website: http://onsemi.com
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For additional information, please contact your
local Sales Representative.
MMBV809LT1/D