Schottky Barrier Diodes (SBD) MA4X796 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification + 0.2 2.8 − 0.3 + 0.25 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single 0.95 + 0.1 0.5 0.4 − 0.05 2 + 0.1 50 V VRRM 50 V 300 mA + 0.1 0.16 − 0.06 0.6 − 0 0.2 Unit VR IFM 0.8 0.1 to 0.3 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) 0.4 ± 0.2 200 100 IF(AV) Double*2 Non-repetitive peak forward surge current*1 1.1 − 0.1 Rating Double*2 3 0 to 0.1 Symbol 1 + 0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.95 + 0.2 2.9 − 0.05 • Two MA3X787s in the same direction are contained in one package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed 1.9 ± 0.2 0.5 R 4 + 0.1 ■ Features 0.65 ± 0.15 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 Marking Symbol: M4B mA 70 Internal Connection IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 4 1 3 2 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 30 µA 0.55 V Reverse current (DC) IR VR = 50 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 25 pF trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3 ns Reverse recovery time* Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse Output Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA4X796 Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 104 0.8 Ta = 125°C 0.7 103 Ta = 125°C 75°C 25°C 10 − 20°C 1 10−1 0.6 0.5 IF = 100 mA 0.4 0.3 0.2 0 0.1 0.2 0.3 0.4 0.5 10 25°C 3 mA 0 −40 0.6 75°C 102 1 10 mA 0.1 10−2 Reverse current IR (µA) Forward voltage VF (V) Forward current IF (A) 102 Forward voltage VF (V) 10−1 0 40 80 120 160 200 0 IR T a 10 30 40 60 Ta = 25°C 10 1 −40 40 80 120 160 Ambient temperature Ta (°C) 2 50 40 30 20 10 0 0 200 Forward surge current IF(surge) (A) Reverse current IR (µA) Terminal capacitance Ct (pF) 30 V 10 V 102 10−1 60 1 000 VR = 50 V 103 50 IF(surge) tW Ct VR 104 20 Reverse voltage VR (V) Ambient temperature Ta (˚C) 0 10 20 30 40 50 Reverse voltage VR (V) 60 300 IF(surge) tW 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30