VISHAY SI1473DH

New Product
Si1473DH
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (Ω)
ID (A)c
0.100 at VGS = - 10 V
- 1.6
0.145 at VGS = - 4.5 V
- 1.6
VDS (V)
- 30
Qg (Typ)
4.1 nC
• TrenchFET® Power MOSFET
APPLICATIONS
RoHS
• Load Switch for Portable Devices
COMPLIANT
SOT-363
SC-70 (6-LEADS)
S
1
6
D
D
2
5
D
G
3
4
S
Marking Code
BJ
XX
YY
D
Lot Traceability
and Date Code
G
Part #
Code
Top View
D
Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
- 1.6c
ID
- 1.6a, b, c
- 1.6a, b, c
TA = 70 °C
Continuous Source-Drain Diode Currenta, b
Maximum Power Dissipationa, b
TC = 25 °C
TA = 25 °C
- 1.6c
IS
- 1.6a, b, c
TC = 25 °C
2.78
TC = 70 °C
1.78
TA = 25 °C
PD
W
2.5a, b
1a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 6.5c
IDM
Pulsed Drain Current (10 µs Pulse Width)
V
-1.6c
TC = 25 °C
TC = 70 °C
Unit
- 55 to 150
Soldering Recommendations (Peak Temperature)c, d
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, d
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t ≤ 5 sec
RthJA
60
80
Steady State
RthJF
34
45
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 sec.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74438
S-70308-Rev. B, 12-Feb-07
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New Product
Si1473DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
4
-1
-3
V
- 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 10 V
rDS(on)
V
- 32
-3
µA
A
VGS = - 10 V, ID = - 2.0 A
0.084
0.100
VGS = - 4.5 V, ID = - 1.6 A
0.120
0.145
VDS = - 10 V, ID = - 2.0 A
6
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
51
Total Gate Charge
Qg
4.1
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
365
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
68
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A
1.2
f = 1 MHz
9.2
6.2
nC
1.7
td(on)
VDD = - 15 V, RL = 7.5 Ω
ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
Ω
24
40
60
100
25
40
tf
15
25
td(on)
4
8
10
20
VDD = - 15 V, RL = 7.5 Ω
ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω
tr
td(off)
tf
15
25
6
12
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 1.6
- 6.5
IS = - 2 A, VGS = 0 V
IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.85
- 1.2
V
23
35
ns
15
23
nC
9
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74438
S-70308-Rev. B, 12-Feb-07
New Product
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
VGS = 10 thru 5 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
8
4V
6
4
2
1.2
TJ = 125 °C
0.8
25 °C
0.4
3V
- 55 °C
0.0
0.6
1.2
1.8
2.4
3.0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
600
0.16
480
C - Capacitance (pF)
r DS(on) - On-Resistance ( )
0
0.0
VGS = 4.5 V
0.12
VGS = 10 V
0.08
Ciss
360
240
Coss
120
0.04
Crss
0.00
0.0
0
1.6
3.2
4.8
6.4
8.0
0
6
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.6
ID = 2.5 A
ID = 2 A
8
1.4
rDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
18
VDS = 10 V
VDS = 15 V
6
VDS = 20 V
4
2
VGS = 10 V
VGS = 4.5 V
1.2
1.0
0.8
0
0
2
Document Number: 74438
S-70308-Rev. B, 12-Feb-07
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
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New Product
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
10
r DS(on) - On-Resistance ( )
ID = 2 A
I S - Source Current (A)
TJ = 150 °C
1
TJ = 25 °C
0.1
0.4
0.3
0.2
TJ = 125 °C
0.1
TJ = 25 °C
0.0
0.01
0.0
0.3
0.6
0.9
1.2
0
1.5
1
2
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.6
30
0.4
ID = 250 µA
0.2
24
ID = 5 mA
Power (W)
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.0
- 0.2
- 0.4
- 50
3
18
12
6
0
- 25
0
25
50
75
100
125
150
0.001
0.01
TJ - Temperature (°C)
0.1
1
10
Time (sec)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
I D - Drain Current (A)
Limited by rDS(on)
1
1 ms
10 ms
100 ms
1s
10 s
dc
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
*VGS
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74438
S-70308-Rev. B, 12-Feb-07
New Product
Si1473DH
Vishay Siliconix
4.5
3.5
3.6
2.8
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.7
Package Limited
1.8
2.1
1.4
0.7
0.9
0.0
0.0
0
25
50
75
100
125
0
150
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
Current Derating*
1.20
Power Dissipation (W)
0.96
0.72
0.48
0.24
0.00
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74438
S-70308-Rev. B, 12-Feb-07
www.vishay.com
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New Product
Si1473DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74438.
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Document Number: 74438
S-70308-Rev. B, 12-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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