New Product Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.0275 at VGS = - 4.5 V - 8.0a 0.034 at VGS = - 2.5 V - 7.9 0.045 at VGS = - 1.8 V - 2.2 • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested Qg (Typ) COMPLIANT APPLICATIONS • Load Switch • PA Switch • Battery Switch TSOP-6 Top View 3 mm 1 6 2 5 RoHS 26.2 nC (4) S (3) G Marking Code 3 AK 4 XXX Lot Traceability and Date Code Part # Code 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 20 ± 8.0 - 8.0a - 7.03 - 7.0b, c - 5.8b, c - 25 - 2.48 - 1.73b, c 2.97 1.9 2.08b, c 1.33b, c - 55 to 150 ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current IS PD TJ, Tstg Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 50 35 Maximum 60 42 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 90 °C/W. Document Number: 74478 S-70537-Rev. A, 26-Mar-07 www.vishay.com 1 New Product Si3493BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA - 20 Typ Max Unit Static Drain-Source Breakdown Voltage ΔVDS /TJ VDS Temperature Coefficient V -14.1 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 0.9 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VDS ≥ - 5 V, VGS = - 4.5 V 2.85 - 0.4 µA A - 25 VGS = - 4.5 V, ID = - 7 A 0.023 0.0275 VGS = - 2.5 V, ID = - 3.5 A 0.0284 0.034 VGS = - 1.8 V, ID = - 2.2 A 0.0347 0.045 VDS = 10 V, ID = - 7 A 24.3 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1805 VDS = - 10 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A 29 43.5 26.2 39.3 1.45 nC 7.14 f = 1 MHz 6.5 22 33 VDD = - 10 V, RL = 2.0 Ω ID ≅ - 5.0 A, VGEN = - 4.5 V, Rg = 1 Ω 72 108 75 113 84 126 tf Fall Time pF 245 VDS = - 10 V, VGS = - 5.0 V, ID = - 7 A td(on) Turn-on Delay Time 285 10 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 2.48 ISM VSD - 25 IS = - 2.5 A - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 52 78 ns Body Diode Reverse Recovery Charge Qrr 49.5 74.3 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 2.1 A, di/dt = 100 A/µs, TJ = 25 °C 23.5 28.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74478 S-70537-Rev. A, 26-Mar-07 New Product Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 4.0 VGS = 5 thru 2 V 3.2 I D - Drain Current (A) I D - Drain Current (A) 20 15 10 1.5 V 5 2.4 1.6 TC = 25 °C 0.8 TC = 125 °C 1V 0 0.0 0.6 1.2 1.8 2.4 TC = - 55 °C 0.0 0.0 3.0 0.8 1.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 3500 2800 C - Capacitance (pF) 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V Ciss 2100 1400 0.03 Coss 700 VGS = 4.5 V Crss 0.00 0 0 5 10 15 20 25 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.4 VGS = 4.5 V, ID = 7 A VGS = 2.5 V, ID = 3.5 A ID = 7 A 4 VDS = 10 V rDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.2 VDS - Drain-to-Source Voltage (V) 0.12 r DS(on) - On-Resistance ( ) 0.4 VDS = 16 V 3 2 1.2 VGS = 1.8 V, ID = 2.2 A 1.0 0.8 1 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74478 S-70537-Rev. A, 26-Mar-07 28 35 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.060 10 r DS(on) - On-Resistance ( ) I S - Source Current (A) ID = 7 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.050 TA = 125 °C 0.030 TA = 25 °C 0.020 0.000 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.0 20 0.8 16 ID = 250 µA Power (W) VGS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) 0.6 0.4 0.2 0.0 - 50 12 TA = 25 °C 8 4 - 25 0 25 50 75 100 125 0 10 -3 150 10 -2 10 -1 1 10 100 600 Time (sec) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 *Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 100 ms 1 1s 10 s dc 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 *VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74478 S-70537-Rev. A, 26-Mar-07 New Product Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 4 3 Package Limited Power Dissipation (W) ID - Drain Current (A) 8 6 4 2 1 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74478 S-70537-Rev. A, 26-Mar-07 www.vishay.com 5 New Product Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74478. www.vishay.com 6 Document Number: 74478 S-70537-Rev. A, 26-Mar-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1