VISHAY SIA444DJT

New Product
SiA444DJT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.017 at VGS = 10 V
12
0.022 at VGS = 4.5 V
4.5
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Ultra-Thin 0.6 mm height
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
7 nC
APPLICATIONS
Thin PowerPAK SC-70-6L-Single
0.6
• DC/DC Converter
• High Frequency Switching
mm
Marking Code
D 1
6 D
AMX
m
2.05 m
D 2
Part # code
5 D
G
XXX
Lot Traceability
and Date code
G 3
4 S
D
S
S
m
2.05 m
Ordering Information: SiA444DJT-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
12a
ID
TA = 25 °C
11a, b, c
8.8b, c
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
12a
IS
TA = 25 °C
2.9b, c
TC = 25 °C
19
TC = 70 °C
Maximum Power Dissipation
12
PD
TA = 25 °C
W
3.5b, c
2.2b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
40
TC = 25 °C
Continuous Source-Drain Diode Current
V
12a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
b, f
Maximum Junction-to-Case (Drain)
Typical
Maximum
t5s
RthJA
28
36
Steady State
RthJC
5.3
6.5
Unit
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
www.vishay.com
1
New Product
SiA444DJT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
V
34
ID = 250 µA
mV/°C
- 4.8
VGS(th)
VDS = VGS , ID = 250 µA
2.2
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS 5 V, VGS = 10 V
1.0
20
µA
A
VGS 10 V, ID = 7.4 A
0.014
0.017
VGS 4.5 V, ID = 6.5 A
0.017
0.022
VDS = 10 V, ID = 7.4 A
24

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
560
VDS = 15 V, VGS = 0 V, f = 1 MHz
tr
pF
55
VDS = 15 V, VGS = 10 V, ID = 11 A
10
15
5
8
VDS = 15 V, VGS = 4.5 V, ID = 11 A
1.5
VDD = 15 V, RL = 1.7 
ID  8.8 A, VGEN = 4.5 V, Rg = 1 
0.7
3.5
7.0
12
20
12
20
15
25
tf
10
15
td(on)
7
15
tr
td(off)
nC
1.7
f = 1 MHz
td(on)
td(off)
125
VDD = 15 V, RL = 1.7 
ID  8.8 A, VGEN = 10 V, Rg = 1 
tf
12
20
15
25
10
15

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
12
40
IS = 8.8 A, VGS 0 V
IF = 8.8 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
15
30
ns
6
12
nC
7.5
7.5
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
New Product
SiA444DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
40
VGS = 10 V thru 4 V
8
ID - Drain Current (A)
ID - Drain Current (A)
32
24
VGS = 3 V
16
8
6
TC = 25 °C
4
2
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
25
30
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
800
600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.024
VGS = 4.5 V
0.018
0.012
VGS = 10 V
Ciss
400
200
0.006
Coss
Crss
0.000
0
0
8
16
24
32
40
0
5
10
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
ID = 11 A
1.6
V DS = 15 V
8
ID = 7.4 A
VGS = 10 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
15
V DS = 7.5 V
6
V DS = 24 V
4
2
1.4
VGS = 4.5 V
1.2
1.0
0.8
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
10
12
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
SiA444DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.05
ID = 7.4 A
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.04
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.03
TJ = 150 °C
0.02
TJ = 25 °C
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.9
30
1.8
25
1.7
20
1.5
Power (W)
VGS(th) (V)
1.6
1.4
1.3
ID = 250 μA
1.2
15
10
1.1
5
1.0
0.9
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
1000
100
Limited by R DS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
TA = 25 °C
Single Pulse
0.01
0.1
DC
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
New Product
SiA444DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
20
Power Dissipation (W)
ID - Drain Current (A)
25
20
15
Package Limited
10
15
10
5
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
www.vishay.com
5
New Product
SiA444DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67056.
www.vishay.com
6
Document Number: 67056
S10-2537-Rev. A, 08-Nov-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1