Data Sheet

SA616
Low-voltage high performance mixer FM IF system
Rev. 5 — 24 July 2012
Product data sheet
1. General description
The SA616 is a low-voltage high performance monolithic FM IF system incorporating a
mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector,
logarithmic Received Signal Strength Indicator (RSSI), voltage regulator and audio and
RSSI op amps. The SA616 is available in SSOP20 and HVQFN20 packages.
The SA616 was designed for portable communication applications and will function down
to 2.7 V. The RF section is similar to the famous SA615. The audio and RSSI outputs
have amplifiers with access to the feedback path. This enables the designer to adjust the
output levels or add filtering.
2. Features and benefits















Low power consumption: 3.5 mA typical at 3 V
Mixer input to >150 MHz
Mixer conversion power gain of 17 dB at 45 MHz
XTAL oscillator effective to 150 MHz (LC oscillator or external oscillator can be used at
higher frequencies)
102 dB of IF amp/limiter gain
2 MHz IF amp/limiter small signal bandwidth
Temperature compensated logarithmic RSSI with a 80 dB dynamic range
Low external component count; suitable for crystal/ceramic/LC filters
Excellent sensitivity: 0.31 V into 50  matching network for 12 dB SINAD
(Signal-to-Noise-and-Distortion ratio) for 1 kHz tone with RF at 45 MHz and IF at
455 kHz
SA616 meets cellular radio specifications
Audio output internal op amp
RSSI output internal op amp
Internal op amps with rail-to-rail outputs
ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per
JESD22-C101
Latch-up testing is done to JEDEC Standard JESD78 Class II, Level B
3. Applications




Portable cellular radio FM IF
Cordless phones
Wireless systems
RF level meter
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system






Spectrum analyzer
Instrumentation
FSK and ASK data receivers
Log amps
Portable high performance communication receiver
Single conversion VHF receivers
4. Ordering information
Table 1.
Ordering information
Tamb = 40 C to +85 C
Type number
Topside
mark
Package
Name
Description
Version
SA616DK/01
SA616DK
SSOP20
plastic shrink small outline package; 20 leads;
body width 4.4 mm
SOT266-1
SA616BS
616B
HVQFN20
plastic thermal enhanced very thin quad flat package; no leads; SOT917-1
20 terminals; body 4  4  0.85 mm
5. Block diagram
20
(18)
19
(17)
18
(16)
17
(15)
16
(14)
15
(13)
14
(12)
13
(11)
12
(10)
11
(9)
IF amp
limiter
mixer
RSSI
OSC
quad
VREG
1
(19)
2
(20)
E
3
(1)
B
4
(2)
audio
5
(3)
6
(4)
7
(5)
8
(6)
9
(7)
10
(8)
002aaf352
Pin numbers for SSOP20; HVQFN20 pins shown in parentheses.
Fig 1.
SA616
Product data sheet
Block diagram of SA616
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
2 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
6. Pinning information
6.1 Pinning
RF_IN
1
20 MIXER_OUT
RF_IN_DECOUPL
2
19 IF_AMP_DECOUPL
OSC_OUT
3
18 IF_AMP_IN
OSC_IN
4
17 IF_AMP_DECOUPL
RSSI_OUT
5
VCC
6
AUDIO_FEEDBACK
7
14 LIMITER_IN
AUDIO_OUT
8
13 LIMITER_DECOUPL
RSSI_FEEDBACK
9
12 LIMITER_DECOUPL
16 IF_AMP_OUT
SA616DK/01
15 GND
QUADRATURE_IN 10
11 LIMITER_OUT
002aaf350
AUDIO_FEEDBACK
5
17 IF_AMP_DECOUPL
18 MIXER_OUT
16 IF_AMP_IN
13 GND
12 LIMITER_IN
11 LIMITER_DECOUPL
DAP(1)
LIMITER_DECOUPL 10
4
9
VCC
14 IF_AMP_OUT
SA616BS
8
3
LIMITER_OUT
2
QUADRATURE_IN
OSC_IN
RSSI_OUT
15 IF_AMP_DECOUPL
7
1
6
OSC_OUT
AUDIO_OUT
terminal 1
index area
19 RF_IN
20 RF_IN_DECOUPL
Pin configuration for SSOP20
RSSI_FEEDBACK
Fig 2.
002aaf351
Transparent top view
(1) Die Attach Paddle (DAP).
Fig 3.
SA616
Product data sheet
Pin configuration for HVQFN20
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
3 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
6.2 Pin description
Table 2.
Pin description
Symbol
Product data sheet
Description
SSOP20
HVQFN20
RF_IN
1
19
RF input
RF_IN_DECOUPL
2
20
RF input decoupling pin
OSC_OUT
3
1
oscillator output
OSC_IN
4
2
oscillator input
RSSI_OUT
5
3
RSSI output
VCC
6
4
positive supply voltage
AUDIO_FEEDBACK
7
5
audio amplifier negative feedback terminal
AUDIO_OUT
8
6
audio amplifier output
RSSI_FEEDBACK
9
7
RSSI amplifier negative feedback terminal
QUADRATURE_IN
10
8
quadrature detector input terminal
LIMITER_OUT
11
9
limiter amplifier output
LIMITER_DECOUPL
12
10
limiter amplifier decoupling pin
LIMITER_DECOUPL
13
11
limiter amplifier decoupling pin
LIMITER_IN
14
12
limiter amplifier input
GND
15
13[1]
ground; negative supply
IF_AMP_OUT
16
14
IF amplifier output
IF_AMP_DECOUPL
17
15
IF amplifier decoupling pin
IF_AMP_IN
18
16
IF amplifier input
IF_AMP_DECOUPL
19
17
IF amplifier decoupling pin
MIXER_OUT
20
18
mixer output
-
-
DAP
exposed die attach paddle
[1]
SA616
Pin
HVQFN20 package supply ground is connected to both GND pin and exposed center pad. GND pin must
be connected to supply ground for proper device operation. For enhanced thermal, electrical, and board
level performance, the exposed pad needs to be soldered to the board using a corresponding thermal pad
on the board and for proper heat conduction through the board, thermal vias need to be incorporated in the
PCB in the thermal pad region.
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
4 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
7. Functional description
The SA616 is an IF signal processing system suitable for second IF systems with input
frequency as high as 150 MHz. The bandwidth of the IF amplifier and limiter is at least
2 MHz with 90 dB of gain. The gain/bandwidth distribution is optimized for 455 kHz,
1.5 k source applications. The overall system is well-suited to battery operation as well
as high performance and high quality products of all types.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include
a noise figure of 6.2 dB, conversion gain of 17 dB, and input third-order intercept of
9 dBm. The oscillator will operate in excess of 200 MHz in L/C tank configurations.
Hartley or Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler
oscillators are recommended for crystal configurations up to 150 MHz.
The output impedance of the mixer is a 1.5 k resistor permitting direct connection to a
455 kHz ceramic filter. The input resistance of the limiting IF amplifiers is also 1.5 k. With
most 455 kHz ceramic filters and many crystal filters, no impedance matching network is
necessary. The IF amplifier has 43 dB of gain and 5.5 MHz bandwidth. The IF limiter has
60 dB of gain and 4.5 MHz bandwidth.
To achieve optimum linearity of the log signal strength indicator, there must be a 12 dBV
insertion loss between the first and second IF stages. If the IF filter or interstage network
does not cause 12 dBV insertion loss, a fixed or variable resistor or an L pad for
simultaneous loss and impedance matching can be added between the first IF output
(IF_AMP_OUT) and the interstage network. The overall gain will then be 90 dB with
2 MHz bandwidth.
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is
AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase
relationship to the internal signal, drives the other port of the multiplier cell.
The demodulated output of the quadrature drives an internal op amp. This op amp can be
configured as a unity gain buffer, or for simultaneous gain, filtering, and second-order
temperature compensation if needed. It can drive an AC load as low as 5 k with a
rail-to-rail output.
A log signal strength completes the circuitry. The output range is greater than 90 dB and is
temperature compensated. This log signal strength indicator exceeds the criteria for
AMPS or TACS cellular telephone. This signal drives an internal op amp. The op amp is
capable of rail-to-rail output. It can be used for gain, filtering, or second-order temperature
compensation of the RSSI, if needed.
Remark: dBV = 20log VO/VI.
SA616
Product data sheet
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
8. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCC
supply voltage
Tstg
storage temperature
Tamb
ambient temperature
operating
Min
Max
Unit
-
7
V
65
+150
C
40
+85
C
9. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Max
Unit
Zth(j-a)
transient thermal impedance
from junction to ambient
SA616DK/01 (SSOP20)
117
K/W
SA616BS (HVQFN20)
40
K/W
10. Static characteristics
Table 5.
Static characteristics
VCC = 3 V; Tamb = 25 C; unless specified otherwise.
SA616
Product data sheet
Symbol
Parameter
VCC
ICC
Conditions
Min
Typ
Max
Unit
supply voltage
2.7
-
7.0
V
supply current
-
3.5
5.0
mA
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© NXP B.V. 2012. All rights reserved.
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
11. Dynamic characteristics
Table 6.
Dynamic characteristics
Tamb = 25 C; VCC = 3 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 2.4 k and R18 = 3.3 k. RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak
deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 21. The parameters listed
below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent
the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Mixer/oscillator section (external LO = 220 mV RMS value)
fi
input frequency
-
150
-
MHz
fosc
oscillator frequency
-
150
-
MHz
NF
noise figure
at 45 MHz
-
6.8
-
dB
IP3I
input third-order intercept point
50  source;
f1 = 45.0 MHz; f2 = 45.06 MHz;
input RF level = 52 dBm
-
9
-
dB
Gp(conv)
conversion power gain
matched 14.5 dBV step-up
11
17
-
dB
50  source
-
2.5
-
dB
Ri(RF)
RF input resistance
Ci(RF)
RF input capacitance
Ro(mix)
mixer output resistance
single-ended input
-
8
-
k
-
3.0
4.0
pF
MIXER_OUT pin
1.25
1.5
-
k
IF section
Gamp(IF)
IF amplifier gain
50  source
-
44
-
dB
Glim
limiter gain
50  source
-
58
-
dB
Pi(IF)
IF input power
for 3 dB input limiting sensitivity;
R17 = 2.4 k; R18 = 3.3 k
(Figure 21); test at IF_AMP_IN pin
-
105
-
dBm
AM
AM rejection
80 % AM 1 kHz
-
40
-
dB
Vo(aud)
audio output voltage
gain of two (2 k AC load)
60
120
-
mV
SINAD
signal-to-noise-and-distortion ratio
IF level 110 dBm
-
17
-
dB
30
45
-
dB
-
62
-
dB
-
0.3
0.8
V
THD
total harmonic distortion
S/N
signal-to-noise ratio
no modulation for noise
Vo(RSSI)
RSSI output voltage
RF; R9 = 2 k
RF level = 118 dBm
RF level = 68 dBm
0.7
1.1
2
V
RF level = 23 dBm
1.0
1.8
2.5
V
RSSI(range) RSSI range
-
80
-
dB
RSSI
RSSI variation
-
2
-
dB
Zi(IF)
IF input impedance
IF_AMP_IN pin
1.3
1.5
-
k
Zo(IF)
IF output impedance
IF_AMP_OUT pin
-
0.3
-
k
Zi(lim)
limiter input impedance
LIMITER_IN pin
1.3
1.5
-
k
Zo(lim)
limiter output impedance
LIMITER_OUT pin
-
0.3
-
k
Vo(RMS)
RMS output voltage
LIMITER_OUT pin
-
130
-
mV
SA616
Product data sheet
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
Table 6.
Dynamic characteristics …continued
Tamb = 25 C; VCC = 3 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.
IF frequency = 455 kHz; R17 = 2.4 k and R18 = 3.3 k. RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak
deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 21. The parameters listed
below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent
the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RF/IF section (internal LO)
Vo(aud)RMS
RMS audio output voltage
VCC = 3 V; RF level = 27 dBm
-
120
-
mV
Vo(RSSI)
RSSI output voltage
system; VCC = 3 V;
RF level = 27 dBm
-
2.2
-
V
SINAD
signal-to-noise-and-distortion ratio
system; RF level = 117 dBm
-
12
-
dB
12. Performance curves
002aaf410
6
VCC = 7.0 V
ICC
(mA)
5
5.0 V
4
3.0 V
3
2
−55
Fig 4.
2.7 V
−15
−35
5
25
65
45
85
105
125
Tamb (°C)
Supply current versus ambient temperature
002aaf411
−8.0
IP3I
(dBm)
−9.0
VCC = 2.7 V
3.0 V
7.0 V
−10.0
−11.0
−12.0
−13.0
−14.0
−40
Fig 5.
SA616
Product data sheet
−20
0
20
40
80
60
90
Tamb (°C)
Third order intercept point versus ambient temperature and supply voltage
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© NXP B.V. 2012. All rights reserved.
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
002aaf412
8.0
NF
(dB)
7.5
7.0
6.5
6.0
5.5
VCC = 2.7 V
3.0 V
7.0 V
5.0
−40
Fig 6.
−20
0
20
40
80
60
90
Tamb (°C)
Mixer noise figure versus ambient temperature and supply voltage
002aaf413
18.0
VCC = 2.7 V
3.0 V
7.0 V
Gp(conv)
(dB)
17.5
17.0
16.5
16.0
−40
Fig 7.
SA616
Product data sheet
−20
0
20
40
80
60
90
Tamb (°C)
Conversion gain versus ambient temperature and supply voltage
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
002aaf414
20
IF output power
(dBm)
0
−20
−40
(1)
(2)
−60
−80
−66
−46
−26
−6
14
34
RF(3) input level (dBm)
RF = 45 MHz; IF = 455 kHz.
(1) Fund product.
(2) Third order product.
(3) 50  input.
Fig 8.
SA616
Product data sheet
Mixer third order intercept and compression
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
10 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
002aaf415
5
relative level
(dB)
−5
audio
−15
−25
AM rejection
−35
−45
THD+N
−55
−65
−125
noise
−105
−85
−65
−45
−25
RF level (dBm)
VCC = 3 V; RF = 45 MHz; deviation = 8 kHz; Vo(aud)RMS = 104.9 mV.
Fig 9.
Relative level of audio, AM rejection, THD+N and noise versus RF level
(Tamb = 40 C)
002aaf416
5
relative level
(dB)
−5
audio
−15
−25
AM rejection
−35
−45
THD+N
−55
−65
−125
noise
−105
−85
−65
−45
−25
RF level (dBm)
VCC = 3 V; RF = 45 MHz; deviation = 8 kHz; Vo(aud)RMS = 117.6 mV.
Fig 10. Relative level of audio, AM rejection, THD+N and noise versus RF level
(Tamb = +25 C)
SA616
Product data sheet
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
11 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
002aaf417
5
relative level
(dB)
−5
audio
−15
−25
AM rejection
−35
−45
THD+N
−55
noise
−65
−125
−105
−85
−65
−45
−25
RF level (dBm)
VCC = 3 V; RF = 45 MHz; deviation = 8 kHz; Vo(aud)RMS = 127 mV.
Fig 11. Relative level of audio, AM rejection, THD+N and noise versus RF level
(Tamb = +85 C)
002aaf418
5
relative level
(dB)
−5
audio
−15
−25
−35
−45
distortion
−55
−65
−55
AM rejection
noise
−35
−15
5
20
45
65
85
105
125
Tamb (°C)
VCC = 3 V; RF = 45 MHz; RF level = 45 dBm; deviation = 8 kHz; Vo(aud)RMS = +117.6 mV.
Fig 12. Relative audio level, distortion, AM rejection and noise versus
ambient temperature
SA616
Product data sheet
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
12 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
002aaf419
2.4
Vo(RSSI)
(V)
2.0
Tamb = +85 °C
room
−40 °C
1.6
1.2
0.8
0.4
0
−95
−75
−55
−35
−15
5
IF level (dBm)
455 kHz IF at 3 V.
Fig 13. RSSI output voltage versus IF level
002aaf420
2.1
Tamb = +85 °C
+27 °C
−40 °C
Vo(RSSI)
(V)
1.8
1.5
1.2
0.9
0.6
0.3
−125
−105
−85
−65
−45
−25
RF level (dBm)
VCC = 3 V
Fig 14. RSSI output voltage versus RF level
SA616
Product data sheet
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
13 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
002aaf421
300
Vo(aud)RMS
(mV)
VCC = 7.0 V
200
5.0 V
3.0 V
2.7 V
100
0
−55
−15
−35
25
5
65
45
85
105
125
Tamb (°C)
Fig 15. RMS audio output voltage versus ambient temperature
13. Application information
C26
R18
3.3 kΩ
C15
R17
2.4 kΩ
FL1
FL2
C23
20
19
C21
18
C18 C17
17
16
15
14
13
12
11
IF amp
limiter
mixer
RSSI
OSC
quad
VREG
audio
1
2
3
4
5
C1
6
C9
45 MHz
input
9
10
10 kΩ
L1
R10
8.2 kΩ
C10
C7
C5
8
R11
C8
C2
7
L2
C27
C12
R19
11 kΩ
IFT1
C6
C19
390 pF
X1
RSSI_OUT
VCC
AUDIO_OUT
C14
002aaf408
The layout is very critical in the performance of the receiver. We highly recommend our demo
board layout.
All of the inductors, the quad tank, and their shield must be grounded. A 10 F to 15 F or higher
value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this
capacitor will ensure consistent good sensitivity in production. A 0.1 F bypass capacitor on the
supply pin, and grounded near the 44.545 MHz oscillator improves sensitivity by 2 dB to 3 dB.
Fig 16. SA616 45 MHz application circuit (SA616DK demo board)
SA616
Product data sheet
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Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
14 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
Table 7.
Component
Description
C1
51 pF NPO ceramic
C2
220 pF NPO ceramic
C5, C9, C14, C17,
C18, C21, C23, C26
100 nF  10 % monolithic ceramic
C6
30 pF trim cap
C7
1 nF ceramic
C8, C15
10.0 pF NPO ceramic
C10
15 F tantalum (minimum)
C12
2.2 F  10 % tantalum
C19
390 pF  10 % monolithic ceramic
2.2 F tantalum
C27
FL1,
SA616
Product data sheet
SA616DK demo board component list
FL2[1]
ceramic filter Murata CFUKF455KB4X-R0
IFT1
330 H Toko 836AN-0129Z
L1
0.33 H Toko A638AN-0158Z
L2
1.2 H Toko FSLM2520-1R2K
X1
44.545 MHz crystal ICM4712701
R5[2]
not used in application board
R10
8.2 k  5 % 1/4W carbon composition
R11
10 k  5 % 1/4W carbon composition
R17
2.4 k  5 % 1/4W carbon composition
R18
3.3 k  5 % 1/4W carbon composition
R19
11 k  5 % 1/4W carbon composition
[1]
This is a 30 kHz bandwidth 455 kHz ceramic filter. Al the characterization and testing are done with this
wideband filter. A more narrowband 15 kHz bandwidth 455 kHz ceramic filter that may be used as an
alternative selection is Murata CFUKG455KE4A-R0.
[2]
R5 can be used to bias the oscillator transistor at a higher current for operation above 45 MHz.
Recommended value is 22 k, but should not be below 10 k.
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
SA6x6DK
RF IN
45 MHz
SA58640DK
IF = 455 kHz
L1
FIL1
C6
C1
C2
C21
TOKO
C23
455 kHz
C5
L2
C7
U1
C8
R17
R11
R18
C26
44.545 MHz
X1
R10
C15
C17 C18
R19
RSSI
C10
FIL2
C9
VCC
AUDIO
C14
C19
C27
455 kHz
C12
GND
820 Ω
AUDIO_DC
FT1
4.7 nF
001aal912
Fig 17. SA6x6DK/SA58640DK top view with components
SA616
Product data sheet
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© NXP B.V. 2012. All rights reserved.
16 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
001aal892
Fig 18. SA6x6DK/SA58640DK bottom view (viewed from top)
SA616
Product data sheet
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17 of 31
SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
RF IN
45 MHz
SA6x6BS
C2
C1
IF = 455 kHz
L1
C6
455 kHz
C26
C21
C23
L2
R18
C5
R17
455 kHz
C7
C17
C8
R11
X1
44.545 MHz
C18
C15
C9
C10
R19
C14
C19
RSSI
C12
VCC
R10
C27
AUDIO
R1A
GND
FT1
C1A
AUDIO_DC
001aal913
Fig 19. SA616BS top view with components
SA616
Product data sheet
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
001aal893
Fig 20. SA616BS bottom view (viewed from top)
SA616
Product data sheet
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NXP Semiconductors
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14. Test information
−25 dB,
1500 Ω/50 Ω pad
−10.6 dB,
50 Ω/50 Ω pad
50.5 Ω
96.5 Ω
51.5 Ω
96.5 Ω
C26
2430 Ω 71.5 Ω
32.6 Ω
3880 Ω
−36 dB,
−10.6 dB,
50 Ω/50 Ω pad 156 kΩ/50 Ω pad
−29 dB,
929 Ω/50 Ω pad
71.5 Ω
32.8 Ω
R18
3.3 kΩ
C24
51.7 Ω
1.3 kΩ
C20
SW9
C15
C16
C22
C19
R17
2.4 kΩ
SW7
SW6
SW5
SW8
C23
FL1
20
19
18
C21
FL2
17
16
C18 C17
15
14
13
12
11
IF amp
limiter
mixer
RSSI
OSC
quad
VREG
audio
1
2
4
5
45 MHz
mini-circuit
ZSC2-1B
51.1 Ω
R4
R2
R3
9
10
SW11
SW10
C10
C7
C5
C3
8 R13
R11
R14
C12
R10
L1
SW2
7
R9
C8
C2
6
C9
SW3
SW4
SW1
C1
R1
3
C27
R12
IFT1
R19
16 kΩ
L2
X1
DEEMPHASIS
FILTER
C6
C14
C4
ext.
R7
LOC osc
44.545 MHz 30.5 Ω
45.06
MHz
R6
R8
178 Ω 39.2 Ω
C-WEIGHTED
AUDIO
MEASUREMENT
CIRCUIT
VCC
RSSI_OUT
AUDIO_OUT
002aaf407
Fig 21. SA616 45 MHz test circuit (relays as shown)
SA616
Product data sheet
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NXP Semiconductors
Low-voltage high performance mixer FM IF system
Table 8.
Component
Description
C1
100 pF NPO ceramic
C2
390 pF NPO ceramic
C5, C9, C14, C17, C18,
C21, C23, C25, C26, C27
100 nF  10 % monolithic ceramic
C6
22 pF NPO ceramic
C7
1 nF ceramic
C8, C15
10 pF NPO ceramic
C10
15 F tantalum (minimum)
2.2 F
C12
FL1,
Product data sheet
FL2[1]
ceramic filter Murata CFUKF455KB4X-R0
IFT1
455 kHz (Ce = 180 pF) Toko RMC-2A6597H
L1
147 nH to 160 nH Coilcraft UNI-10/142-04J08S
L2
0.8 H nominal; Toko 292CNS-T1038Z
R9
2 k  1 % 1/4 W metal film
R10
8.2 k  1 %
R11, R14
10 k  1 %
R12
2 k  1 %
R13
20 k  1 %
R17
2.4 k  5 % 1/4 W carbon composition
R18
3.3 k
R19
16 k
X1
44.545 MHz crystal ICM4712701
[1]
SA616
Automatic test circuit component list
This is a 30 kHz bandwidth 455 kHz ceramic filter. Al the characterization and testing are done with this
wideband filter. A more narrowband 15 kHz bandwidth 455 kHz ceramic filter that may be used as an
alternative selection is Murata CFUKG455KE4A-R0.
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
RF GENERATOR(1)
45 MHz
SA616 DEMOBOARD(2)
RSSI
AUDIO
VCC (+3 V)
DE-EMPHASIS
FILTER
DC VOLTMETER
C–MESSAGE(3)
SCOPE
HP339A DISTORTION
ANALYZER
002aaf409
(1) Set RF generator at 45.000 MHz; use a 1 kHz modulation frequency and a 6 kHz deviation if using
16 kHz filters, or 8 kHz if using 30 kHz filters.
(2) The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a
measure of the quality of the layout and design. If the lowest RSSI voltage is 500 mV or higher, it
means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than
expected.
(3) The C-message and de-emphasis filter combination has a peak gain of 10 dB for accurate
measurements. Without the gain, the measurements may be affected by the noise of the scope
and HP339 analyzer. The de-emphasis filter has a fixed 6 dB/octave slope between 300 Hz and
3 kHz.
Fig 22. SA616 application circuit test setup
SA616
Product data sheet
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NXP Semiconductors
Low-voltage high performance mixer FM IF system
15. Package outline
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10 o
o
0
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT266-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
MO-152
Fig 23. Package outline SOT266-1 (SSOP20)
SA616
Product data sheet
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 4 x 4 x 0.85 mm
B
D
SOT917-1
A
terminal 1
index area
A
E
A1
c
detail X
C
e1
e
b
6
10
y
y1 C
v M C A B
w M C
L
11
5
e
Eh
e2
1
15
terminal 1
index area
20
16
Dh
X
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max.
A1
b
c
D(1)
Dh
E(1)
Eh
e
e1
e2
L
v
w
y
y1
mm
1
0.05
0.00
0.30
0.18
0.2
4.1
3.9
2.45
2.15
4.1
3.9
2.45
2.15
0.5
2
2
0.6
0.4
0.1
0.05
0.05
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT917 -1
---
MO-220
---
EUROPEAN
PROJECTION
ISSUE DATE
05-10-08
05-10-31
Fig 24. Package outline SOT917-1 (HVQFN20)
SA616
Product data sheet
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA616
Product data sheet
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NXP Semiconductors
Low-voltage high performance mixer FM IF system
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 25) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 9 and 10
Table 9.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
 350
< 2.5
235
220
 2.5
220
220
Table 10.
Lead-free process (from J-STD-020C)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 25.
SA616
Product data sheet
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 25. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Abbreviations
Table 11.
SA616
Product data sheet
Abbreviations
Acronym
Description
AM
Amplitude Modulation
AMPS
Advanced Mobile Phone System
ASK
Amplitude Shift Keying
CDM
Charged-Device Model
ESD
ElectroStatic Discharge
ESR
Equivalent Series Resistance
FM
Frequency Modulation
FSK
Frequency Shift Keying
HBM
Human Body Model
IF
Intermediate Frequency
LC
inductor/capacitor filter
LO
Local Oscillator
PCB
Printed-Circuit Board
RF
Radio Frequency
RMS
Root Mean Squared
RSSI
Received Signal Strength Indicator
SINAD
Signal-to-Noise And Distortion ratio
TACS
Total Access Communication System
VHF
Very High Frequency
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Low-voltage high performance mixer FM IF system
18. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
SA616 v.5
20120724
Product data sheet
-
SA616 v.4
Modifications:
•
Section 2 “Features and benefits”:
– 14th bullet item re-written
– added (new) 15th bullet item
SA616 v.4
20110412
Product data sheet
-
SA616 v.3
SA616 v.3
20100621
Product data sheet
-
SA616 v.2
SA616 v.2
19971107
Product specification
ECN 853-1676 18665
dated 1997 Nov 07
SA616 v.1
SA616 v.1
19931215
Product specification
ECN 853-1676 11649
dated 1993 Dec 15
-
SA616
Product data sheet
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SA616
NXP Semiconductors
Low-voltage high performance mixer FM IF system
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
SA616
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 24 July 2012
© NXP B.V. 2012. All rights reserved.
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NXP Semiconductors
Low-voltage high performance mixer FM IF system
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
SA616
Product data sheet
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NXP Semiconductors
Low-voltage high performance mixer FM IF system
21. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
19
19.1
19.2
19.3
19.4
20
21
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Performance curves . . . . . . . . . . . . . . . . . . . . . 8
Application information. . . . . . . . . . . . . . . . . . 14
Test information . . . . . . . . . . . . . . . . . . . . . . . . 20
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 23
Soldering of SMD packages . . . . . . . . . . . . . . 25
Introduction to soldering . . . . . . . . . . . . . . . . . 25
Wave and reflow soldering . . . . . . . . . . . . . . . 25
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 25
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 26
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 28
Legal information. . . . . . . . . . . . . . . . . . . . . . . 29
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 29
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Contact information. . . . . . . . . . . . . . . . . . . . . 30
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 July 2012
Document identifier: SA616
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