Data Sheet

SA639
Low voltage mixer FM IF system with filter amplifier and
data switch
Rev. 4 — 10 July 2014
Product data sheet
1. General description
The SA639 is a low-voltage high performance monolithic FM IF system with high-speed
RSSI incorporating a mixer/oscillator, two wideband limiting intermediate frequency
amplifiers, quadrature detector, logarithmic Received Signal Strength Indicator (RSSI),
fast RSSI op amps, voltage regulator, wideband data output, post detection filter amplifier
and data switch. The SA639 is available in 24-lead TSSOP (Thin Shrink Small Outline
Package).
The SA639 was designed for high-bandwidth portable communication applications and
functions down to 2.7 V. The RF section is similar to the famous NE605. The data output
provides a minimum bandwidth of 1 MHz to demodulate wideband data. The RSSI output
is amplified and has access to the feedback pin. This enables the designer to level adjust
the outputs or add filtering.
The post-detection amplifier may be used to realize a low-pass filter function. A
programmable data switch routes a portion of the data signal to an external integration
circuit that generates a data comparator reference voltage.
SA639 incorporates a Power-down mode which powers down the device when pin 8
(POWER_DOWN_CTRL) is HIGH. Power down logic levels are CMOS and TTL
compatible with high input impedance.
2. Features and benefits













VCC = 2.7 V to 5.5 V
Low power consumption: 8.6 mA (typical) at 3 V
Wideband data output (1 MHz minimum)
Fast RSSI rise and fall times
Mixer input to >500 MHz
Mixer conversion power gain of 9.2 dB and noise figure of 11 dB at 110 MHz
XTAL oscillator effective to 150 MHz (L.C. oscillator to 1 GHz local oscillator can be
injected)
92 dB of IF amplifier/limiter power gain
25 MHz limiter small signal bandwidth
Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with
a dynamic range in excess of 80 dB
RSSI output internal op amp
Post detection amplifier for filtering
Programmable data switch
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
 Excellent sensitivity: 2.24 V into 50  matching network for 10 dB S/N
(Signal-to-Noise ratio) with RF at 110 MHz and IF at 9.8 MHz
 ESD hardened
 Power-down mode
3. Applications
 DECT (Digital European Cordless Telephone)
 FSK and ASK data receivers
4. Ordering information
Table 1.
Ordering information
Type number
SA639DH/01
Topside
mark
Package
Name
Description
Version
SA639DH
TSSOP24
plastic thin shrink small outline package; 24 leads;
body width 4.4 mm
SOT355-1
4.1 Ordering options
Table 2.
Ordering options
Type number
Orderable
part number
Package
Packing method
Minimum
order
quantity
Temperature
SA639DH/01
SA639DH/01,112
TSSOP24
Standard marking
*IC’s tube - DSC bulk pack
1575
Tamb = 40 C to +85 C
SA639DH/01,118
TSSOP24
Reel 13” Q1/T1
*Standard mark SMD
2500
Tamb = 40 C to +85 C
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
IF amp
SWITCH_OUT
POWER
DOWN
SWITCH_CTRL
POSTAMP_OUT
POSTAMP_IN
data
POWER_DOWN_CTRL
RSSI_FEEDBACK
VCC
RSSI_OUT
RSSI
B
OSC_IN
OSC_OUT
E
DATA_OUT
VCC
RF_BYPASS
QUADRATURE_IN
quad
FAST
RSSI
OSC
RF_IN
LIMITER_OUT
limiter
mixer
Fig 1.
LIMITER_DECOUPL
LIMITER_DECOUPL
LIMITER_IN
GND
IF_AMP_OUT
IF_AMP_DECOUPL
IF_AMP_IN
IF_AMP_DECOUPL
MIXER_OUT
5. Block diagram
002aag706
Block diagram of SA639
6. Pinning information
6.1 Pinning
RF_IN
1
24 MIXER_OUT
RF_BYPASS
2
23 IF_AMP_DECOUPL
OSC_IN
3
22 IF_AMP_IN
OCS_OUT
4
21 IF_AMP_DECOUPL
VCC
5
20 IF_AMP_OUT
RSSI_FEEDBACK
6
RSSI_OUT
7
POWER_DOWN_CTRL
8
17 LIMITER_DECOUPL
DATA_OUT
9
16 LIMITER_DECOUPL
SA639DH/01
POSTAMP_IN 10
19 GND
18 LIMITER_IN
15 LIMITER_OUT
14 QUADRATURE_IN
POSTAMP_OUT 11
13 SWITCH_OUT
SWITCH_CTRL 12
002aag705
Fig 2.
SA639
Product data sheet
Pin configuration for TSSOP24
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
6.2 Pin description
Table 3.
SA639
Product data sheet
Pin description
Symbol
Pin
Description
RF_IN
1
RF input
RF_BYPASS
2
RF bypass
OSC_OUT
3
oscillator output (emitter)
OSC_IN
4
oscillator input (base)
VCC
5
positive supply voltage
RSSI_FEEDBACK
6
RSSI amplifier negative feedback terminal
RSSI_OUT
7
RSSI output
POWER_DOWN_CTRL
8
power-down control; active HIGH
DATA_OUT
9
data output
POSTAMP_IN
10
postamplifier input
POSTAMP_OUT
11
postamplifier output
SWITCH_CTRL
12
switch control
SWITCH_OUT
13
switch output
QUADRATURE_IN
14
quadrature input
LIMITER_OUT
15
limiter output
LIMITER_DECOUPL
16
limiter amplifier decoupling pin
LIMITER_DECOUPL
17
limiter amplifier decoupling pin
LIMITER_IN
18
limiter amplifier input
GND
19
ground; negative supply
IF_AMP_OUT
20
IF amplifier output
IF_AMP_DECOUPL
21
IF amplifier decoupling pin
IF_AMP_IN
22
IF amplifier input
IF_AMP_DECOUPL
23
IF amplifier decoupling pin
MIXER_OUT
24
mixer output
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
7. Functional description
7.1 Circuit description
The SA639 is an IF signal processing system suitable for second IF or single conversion
systems with input frequency as high as 1 GHz. The bandwidth of the IF amplifier is about
40 MHz, with 44 dB of gain from a 50  source. The bandwidth of the limiter is about
28 MHz with about 58 dB of gain from a 50  source. However, the gain/bandwidth
distribution is optimized for 9.8 MHz, 330  source applications. The overall system is
well-suited to battery operation as well as high performance and high-quality products of
all types, such as digital cordless phones.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include
a noise figure of 11 dB, conversion power gain of 9.2 dB, and input third-order intercept of
9.5 dBm. The oscillator operates in excess of 1 GHz in L/C tank configurations. Hartley
or Colpitts circuits can be used up to 100 MHz for crystal configurations. Butler oscillators
are recommended for crystal configurations up to 150 MHz.
The output of the mixer is internally loaded with a 330  resistor permitting direct
connection to a 330  ceramic filter. The input resistance of the limiting IF amplifiers is
also 330 . With most 330  ceramic filters and many crystal filters, no impedance
matching network is necessary. To achieve optimum linearity of the log signal strength
indicator, there must be a 6 dBV insertion loss between the first and second IF stages. If
the IF filter or interstage network does not cause 6 dBV insertion loss, a fixed or variable
resistor can be added between the first IF output (IF_AMP_OUT, pin 20) and the
interstage network.
The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector.
One port of the Gilbert cell is internally driven by the IF. The other output of the IF is
AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase
relationship to the internal signal, drives the other port of the multiplier cell.
Overall, the IF section has a gain of 90 dB for operation at intermediate frequency at
9.8 MHz. Special care must be given to layout, termination, and interstage loss to avoid
instability.
The demodulated output (DATA_OUT) of the quadrature is a low-impedance voltage
output. This output is designed to handle a minimum bandwidth of 1 MHz. This is
designed to demodulate wideband data, such as in DECT applications.
7.1.1 Post detection filter amplifier
The filter amplifier may be used to realize a group delay optimized low-pass filter for post
detection. The filter amplifier can be configured for Sallen and Key low-pass with Bessel
characteristic and a 3 dB cut frequency of about 800 kHz.
The filter amplifier provides a gain of 0 dB. To reduce frequency response changes as a
result of amplifier load variations, the output impedance is less than 500 . To keep the
amplifier frequency response influence on the filter group delay characteristic at a
minimum, the filter amplifier has a 3 dB bandwidth of at least 4 MHz. At the center of the
carrier, it is mandatory to provide a filter output DC bias voltage of 1.6 V to be within the
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
input common mode range of the external data comparator. The filter output DC bias
voltage specification holds for an exactly center tuned demodulator tank and for the
demodulator output connected to the filter amplifier input.
7.1.2 Data switch
The SA639 incorporates an active data switch used to derive the data comparator
reference voltage with an external integration circuit. The data switch is typically closed for
10 s before and during reception of the synchronization word pattern, and is otherwise
open. The external integration circuit is formed by an R/C low-pass with a time constant of
5 s to 10 s.
The active data switch provides excellent tracking behavior over a DC input range of
1.2 V to 2.0 V. For this range with an RC load (no static current drawn), the DC output
voltage does not differ more than 5 mV from the input voltage. Since the active data
switch is designed to behave like a non-linear charge pump (to allow fast tracking of the
input signal without slew rate limitations under dynamic conditions of a 576 kHz input
signal with 400 mV peak-to-peak and the RC load), the output signal has a 340 mV
peak-to-peak output with a DC average that does not vary from the input DC average by
more than 10 mV.
The data switch is able to sink/source 3 mA from/to the external integration circuit to
minimize the settling time after long power-down periods (DECT paging mode). In
addition, during power-down conditions a reference voltage of approximately 1.6 V is
used as the input to the switch. The switch is in a low current mode to maintain the voltage
on the external RC load. This will further reduce the settling time of the capacitor after
power-up. During power-down the switch can only source and sink a trickle current
(10 A). Thus, the user should make sure that other circuits (like the data comparator
inputs) are not drawing current from the RC circuit.
The data switch provides a slew rate better than 1 V/s to track with system DC offset
from receive slot to receive slot (DECT idle lock or active mode). When the data switch is
opened, the output is in a 3-state mode with a leakage current of less than 100 nA. This
reduces discharge of the external integration circuit. When powered-down, the data
switch outputs a reference of approximately 1.6 V to maintain a charge on the external RC
circuit.
A Received Signal Strength Indicator (RSSI) completes the circuitry. The output range is
greater than 80 dB and is temperature compensated. This log signal strength indicator
exceeds the criteria for DECT cordless telephone. This signal drives an internal op amp.
The op amp is capable of rail-to-rail output. It can be used for gain, filtering, or
second-order temperature compensation of the RSSI, if needed.
Remark: dBV = 20log VO/VI.
SA639
Product data sheet
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Rev. 4 — 10 July 2014
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
8. Internal circuitry
Table 4.
Internal circuits for each pin
All DC voltages measured with POWER_DOWN_CTRL (pin 8) = SWITCH_CTRL (pin 12) =
GND (pin 19) = 0 V; VCC (pin 5) = 3 V; DATA_OUT (pin 9) connected to POSTAMP_IN (pin 10).
Symbol
Pin
DC V
RF_IN
1
+1.07 V
RF_BYPASS
2
+1.07 V
Equivalent circuit
0.8 kΩ
0.8 kΩ
1
2
002aac983
OSC_OUT
3
+1.57 V
OSC_IN
4
+2.32 V
18 kΩ
4
MIX
3
150 μA
002aag707
5
VCC
+3.00 V
VREF
5
BANDGAP
002aac985
RSSI_FEEDBACK
6
+0.20 V
VCC
6
−
+
002aac986
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
Table 4.
Internal circuits for each pin …continued
All DC voltages measured with POWER_DOWN_CTRL (pin 8) = SWITCH_CTRL (pin 12) =
GND (pin 19) = 0 V; VCC (pin 5) = 3 V; DATA_OUT (pin 9) connected to POSTAMP_IN (pin 10).
Symbol
Pin
DC V
RSSI_OUT
7
+0.20 V
Equivalent circuit
VCC
7
002aac988
POWER_DOWN_CTRL
8
0V
R
8
R
002aac989
DATA_OUT
9
+1.7 V
VCC
9
002aag708
POST_AMP_IN
10
+1.70 V
10
20 μA
002aag709
POST_AMP_OUT
11
+1.70 V
11
002aag710
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
Table 4.
Internal circuits for each pin …continued
All DC voltages measured with POWER_DOWN_CTRL (pin 8) = SWITCH_CTRL (pin 12) =
GND (pin 19) = 0 V; VCC (pin 5) = 3 V; DATA_OUT (pin 9) connected to POSTAMP_IN (pin 10).
Symbol
Pin
DC V
SWITCH_CTRL
12
0V
Equivalent circuit
R
12
R
002aag711
SWITCH_OUT
13
+1.70 V
13
002aag712
QUADRATURE_IN
14
+3.00 V
80 kΩ
14
20 μA
002aag713
LIMITER_OUT
15
+1.35 V
15
8.8 kΩ
002aag714
LIMITER_DECOUPL
16
+1.23 V
LIMITER_DECOUPL
17
+1.23 V
LIMITER_IN
18
+1.23 V
18
330 Ω
50 μA
17
16
002aag715
GND
SA639
Product data sheet
19
0V
-
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
Table 4.
Internal circuits for each pin …continued
All DC voltages measured with POWER_DOWN_CTRL (pin 8) = SWITCH_CTRL (pin 12) =
GND (pin 19) = 0 V; VCC (pin 5) = 3 V; DATA_OUT (pin 9) connected to POSTAMP_IN (pin 10).
Symbol
Pin
DC V
IF_AMP_OUT
20
+1.22 V
Equivalent circuit
140 Ω
20
8.8 kΩ
002aag716
IF_AMP_DECOUPL
21
+1.22 V
IF_AMP_IN
22
+1.22 V
IF_AMP_DECOUPL
23
+1.22 V
22
330 Ω
50 μA
23
21
002aag717
MIXER_OUT
24
+1.03 V
110 Ω
24
400 μA
002aag718
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCC
supply voltage
Vn
voltage on any other pin
Tstg
storage temperature
Tamb
ambient temperature
[1]
[1]
operating
Min
Max
Unit
0.3
+6
V
0.3
VCC + 0.3
V
65
+150
C
40
+85
C
Except logic input pins (POWER_DOWN_CTRL and SWITCH_CTRL), which can have 6 V maximum.
10. Thermal characteristics
Table 6.
SA639
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Zth(j-a)
transient thermal impedance
from junction to ambient
TSSOP24 package
117
C/W
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
11. Static characteristics
Table 7.
Static characteristics
VCC = 3 V; Tamb = 25 C; unless otherwise specified.
Symbol
Parameter
VCC
supply voltage
ICC
supply current
ICC(stb)
Conditions
Min
Typ
Max
Unit
2.7
3.0
5.5
V
DC current drain;
POWER_DOWN_CTRL = LOW;
SWITCH_CTRL = HIGH;
3  = 8.33 mA; +3  = 8.87 mA
-
8.6
10
mA
standby supply current
POWER_DOWN_CTRL = LOW;
SWITCH_CTRL = HIGH
3  = 131.9 A; +3  = 148.1 A
-
140
500
A
II
input current
POWER_DOWN_CTRL = LOW
-
-
10
A
POWER_DOWN_CTRL = HIGH
-
-
4
A
VI
input voltage
POWER_DOWN_CTRL = LOW
0
-
0.3  VCC
V
0.7  VCC
-
6
V
RSSI valid (10 % to 90 %)
-
10
-
s
POWER_DOWN_CTRL = HIGH
power-up time
tON
tOFF
[1]
power-down time
RSSI invalid (90 % to 10 %)
-
5
-
s
power-up settling time
data output valid
-
100
200
s
input voltage
switch closed;
SWITCH_CTRL = LOW;
POWER_DOWN_CTRL = LOW
0
-
0.3  VCC
V
switch open; output 3-state;
SWITCH_CTRL = HIGH
0.7  VCC
-
6
V
Switching
VI
II
input current
SWITCH_CTRL = LOW
-
-
10
A
SWITCH_CTRL = HIGH
-
-
4
A
-
0.5
1
s
switch activation time
[1]
When the device is forced in Power-down mode via POWER_DOWN_CTRL (pin 8), the data switch outputs a voltage close to 1.6 V and
the state of the SWITCH_CTRL (pin 12) input has no effect.
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
12. Dynamic characteristics
Table 8.
Dynamic characteristics
Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 110.592 MHz; LO frequency = 120.392 MHz;
IF frequency = 9.8 MHz; RF level = 45 dBm; FM modulation = 576 kHz with 288 kHz peak deviation, discriminator tank
circuit Q = 4. The parameters listed below are tested using automatic test equipment to assure consistent electrical
characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout
improves many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Mixer/oscillator section (external LO = 14 dBm)
fi
input frequency
signal
-
500
-
MHz
fosc
oscillator frequency
external oscillator (buffer)
0.2
500
-
MHz
NF
noise figure
at 110 MHz
-
11
-
dB
IP3i
input third-order intercept point
matched f1 = 110.592 MHz;
f2 = 110.852 MHz
-
9.5
-
dBm
Gp(conv)
conversion power gain
6
9.2
-
dB
Ri(RF)
RF input resistance
-
800
-

Ci(RF)
RF input capacitance
-
3.5
-
pF
Ro(mix)
mixer output resistance
-
330
-

single-ended input
MIXER_OUT pin
IF section
Gamp(IF)
IF amplifier gain
-
40
-
dB
Glim
limiter gain
-
52
-
dB
Pi(IF)
IF input power
-
100
-
dBm
Zi(IF)
IF input impedance
-
330
-

Zo(IF)
IF output impedance
-
330
-

Zi(lim)
limiter input impedance
-
330
-

Zo(lim)
limiter output impedance
-
330
-

Vo(RMS)
RMS output voltage
no load; LIMITER_OUT pin
-
130
-
mV
RL = 10 k; CL = 30 pF
260
360
-
mV
-
2.4
-
MHz
for 3 dB input limiting sensitivity;
test at IF_AMP_IN pin
RF/IF section (external LO = 14 dBm)
peak-to-peak data level
data bandwidth
S/N
signal-to-noise ratio
no modulation for noise
-
60
-
dB
AM
AM rejection
80 % AM 1 kHz
-
36
-
dB
Vo(RSSI)
RSSI output voltage
RF; with buffer
RF level = 90 dBm
0
0.4
0.75
V
RF level = 45 dBm
0.5
0.9
1.3
V
RF level = 10 dBm
0.8
1.2
1.6
V
RF level = 45 dBm
-
0.8
-
s
RF level = 28 dBm
-
0.8
-
s
tr(o)
output rise time
SA639
Product data sheet
RF RSSI output;
10 kHz pulse with 9.8 MHz filter;
no RSSI bypass capacitor;
IF frequency = 9.8 MHz
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 110.592 MHz; LO frequency = 120.392 MHz;
IF frequency = 9.8 MHz; RF level = 45 dBm; FM modulation = 576 kHz with 288 kHz peak deviation, discriminator tank
circuit Q = 4. The parameters listed below are tested using automatic test equipment to assure consistent electrical
characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout
improves many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tf(o)
output fall time
RF RSSI output;
10 kHz pulse with 9.8 MHz filter;
no RSSI bypass capacitor;
IF frequency = 9.8 MHz
RF level = 45 dBm
-
2.0
-
s
RF level = 28 dBm
-
1.8
-
s
RSSI(range) RSSI range
-
80
-
dB
RSSI
RSSI variation
-
1.5
-
dB
SINAD
signal-to-noise-and-distortion
ratio
RF level = 85 dBm
-
12
-
dB
S/N
signal-to-noise ratio
RF level = 100 dBm
-
10
-
dB
Post detection filter amplifier
B3dB
3 dB bandwidth
amplifier; AC coupled;
RL = 10 k; CL = 33 pF
-
12.8
-
MHz
G
gain
amplifier; AC coupled;
RL = 10 k; VO (DC) = 1.6 V
-
0.2
-
dB
slew rate
AC coupled;
RL = 10 k; CL = 33 pF
-
2.4
-
V/s
Ri
input resistance
300
-
-
k
Ci
input capacitance
-
-
3
pF
Zo
output impedance
-
150
800

RL(o)
output load resistance
5
-
-
k
Co(L)
AC coupled
[1]
-
30
-
pF
DC output level
[2]
1.5
1.7
1.9
V
DC input voltage range
[3]
1.2
1.6
2.0
V
output load capacitance
AC coupled
Data switch
peak-to-peak AC input swing
-
400
-
mV
Zi
input impedance
100
-
-
k
Ci
input capacitance
-
-
5
pF
RL(o)
output load resistance
-
500
-

-
1.5
-
dB
3
-
-
mA
-
>14.0
-
V/s
-
0.30
5
mV
RF level = 70 dBm to 40 dBm
7
-
+7
mV
RF level = 40 dBm to 5 dBm
10
-
+10
mV
Through mode (SWITCH_CTRL = LOW)
Gv
Voffset(DC)
voltage gain
AC voltage
output drive capability
sink/source; VO (DC) = 1.6 V
slew rate
VO (DC) = 1.6 V
static offset voltage
VI (DC) = 1.2 V to 2.0 V
DC offset voltage
VI (DC) = 1.4 V to 2.0 V;
VCC = 3.0 V to 5.0 V
SA639
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 10 July 2014
[4]
[5]
[2][6]
© NXP Semiconductors N.V. 2014. All rights reserved.
14 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
Table 8.
Dynamic characteristics …continued
Tamb = 25 C; VCC = +3 V, unless otherwise stated. RF frequency = 110.592 MHz; LO frequency = 120.392 MHz;
IF frequency = 9.8 MHz; RF level = 45 dBm; FM modulation = 576 kHz with 288 kHz peak deviation, discriminator tank
circuit Q = 4. The parameters listed below are tested using automatic test equipment to assure consistent electrical
characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout
improves many of the listed parameters.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VO (DC) = 1.2 V to 2.0 V
-
20
100
nA
3-state mode (SWITCH_CTRL = HIGH)
output leakage current
ILO
[1]
Includes filter feedback capacitance, comparator input capacitance. PCB stray capacitances and switch input capacitance.
[2]
Demodulator output DC coupled with Post Detection Filter Amplifier input and the demodulator tank exactly tuned to center frequency.
[3]
Includes DC offsets due to frequency offsets between Rx and Tx carrier and demodulator tank offset due to mis-tuning.
[4]
With a 400 mV (peak-to-peak) sinusoid at 600 kHz driving POSTAMP_IN pin. Output load resistance 500  in series with 10 nF.
[5]
With a DC input and capacitor in the RC load fully charged.
[6]
The switch is closed every 10 ms for a duration of 40 s. The DC offset is determined by calculating the difference of two DC
measurements, which are determined as follows:
a) The first DC value is measured at the integrating capacitor of the switch when the switch is in the closed position immediately before
it opens. The value to be measured is in the middle of the peak-to-peak excursion of the superimposed sine-wave.
(DClow + (DChigh  DClow) / 2).
b) The second DC value (calculated as above) is measured at POSTAMP_OUT pin immediately after the switch opens, and is the DC
value that gives the largest DC offset to the first DC measurement within a 400 s DECT burst. Minimum and maximum limits are not
tested, however, they are guaranteed by design and characterization using an optimized layout and application circuit.
13. Performance curves
002aag720
12
ICC
(mA)
002aag721
0.5
ICC(stb)
(mA)
0.4
11
VCC = 5.5 V
3.0 V
2.7 V
10
0.3
9
0.2
8
VCC = 5.5 V
3.0 V
2.7 V
7
6
−40
Fig 3.
−15
0.1
10
35
Supply current versus ambient temperature
SA639
Product data sheet
0
−40
60
85
Tamb (°C)
Fig 4.
−15
35
60
85
Tamb (°C)
Standby supply current versus
ambient temperature
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Rev. 4 — 10 July 2014
10
© NXP Semiconductors N.V. 2014. All rights reserved.
15 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
002aag722
15
Gp(conv)
(dB)
13
−4
11
VCC = 5.5 V
3.0 V
2.7 V
−12
7
−16
5
−40
−15
10
35
−20
−40
60
85
Tamb (°C)
10
35
RF = 40 dBm, 110.592 MHz
LO = 10 dBm, 120.392 MHz
LO = 10 dBm, 120.392 MHz
Fig 6.
002aag725
58
G
(dB)
VCC = 5.5 V
3.0 V
2.7 V
60
85
Tamb (°C)
Mixer input third-order intercept point versus
ambient temperature
002aag724
15
NF
(dB)
11
−15
RF = 40 dBm, 110.592 MHz
Mixer conversion power gain versus
ambient temperature
13
VCC = 5.5 V
3.0 V
2.7 V
−8
9
Fig 5.
002aag723
0
IP3i
(dBm)
limiter
54
VCC = 5.5 V
3.0 V
2.7 V
50
46
9
IF amp
42
7
VCC = 5.5 V
3.0 V
2.7 V
38
5
−40
−15
10
35
34
−40
60
85
Tamb (°C)
−15
10
35
60
85
Tamb (°C)
IF input = 90 dBm, 9.8 MHz
IF = 11 MHz
Limiter input = 100 dBm, 9.8 MHz
Fig 7.
Mixer noise figure versus ambient temperature
SA639
Product data sheet
Fig 8.
Limiter and IF gain versus
ambient temperature
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Rev. 4 — 10 July 2014
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16 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
aaa-013811
AM rejection
−40
THD
noise
−80
−100
−40
−15
10
35
−10
THD+N
−50
aaa-013813
2.0
Vo(RSSI)
(V)
1.6
1.2
0.4
−50
1.7
1.5
10
35
60
85
Tamb (°C)
Fig 13. Data output DC voltage versus
ambient temperature
SA639
Product data sheet
peak-to-peak data output AC voltage (mV)
data output DC voltage (V)
VCC = 5.5 V
3.0 V
2.7 V
−15
−70
−50
−30
−10
RF level (dBm)
Fig 12. RSSI versus RF level and VCC
aaa-013815
2.3
1.3
−40
−90
Tamb = 25 C
Fig 11. RSSI versus RF level and temperature
1.9
VCC = 5.5 V
3.0 V
2.7 V
0
−110
−30
−10
RF level (dBm)
VCC = 3 V
2.1
aaa-013814
1.2
0.4
−70
0.3
−10
−30
10
RF input level (dBm)
−50
−70
Fig 10. Receiver RF performance
0.8
−90
−90
RF = 110 MHz; LO = 119.8 MHz; data = 430.76 mV
(peak-to-peak); VCC = 3 V; Tamb = 25 C; 576 kHz sine
0.8
0
−110
0.5
noise
2.0
Vo(RSSI)
(V)
1.6
Tamb = −40 °C
25 °C
85 °C
0.7
AM rejection
−70
RF = 110 MHz; level = 50 dBm; deviation = 288 kHz;
LO = 119.8 MHz; 14 dBm; VCC = 3 V
Relative data output level, THD, noise and
AM rejection versus ambient temperature
0.9
−30
−90
−110
60
85
Tamb (°C)
1.1
RSSI
RSSI (V)
−20
−60
1.3
data
data
0
Fig 9.
aaa-013812
10
relative to data output (dB)
relative to data output (dB)
20
aaa-013816
700
600
500
VCC = 5.5 V
3.0 V
2.7 V
400
300
200
−40
−15
10
35
60
85
Tamb (°C)
Fig 14. Data output AC voltage versus
ambient temperature
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17 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
aaa-013830
3.5
frequency
(MHz)
3.1
2.7
2.3
aaa-013831
10
frequency
(MHz)
8
6
VCC = 5.5 V
3.0 V
2.7 V
4
1.9
2
1.5
−40
−15
10
35
−0.2
6
VCC = 5.5 V
3.0 V
2.7 V
35
60
85
Tamb (°C)
aaa-013833
VCC = 5.5 V
3.0 V
2.7 V
4
−0.6
−0.8
−40
10
10
frequency
(MHz)
8
G
(dB)
−0.4
−15
Fig 16. Switch 3 dB bandwidth versus
ambient temperature
aaa-013832
0
0
−40
60
85
Tamb (°C)
Fig 15. Data output 3 dB bandwidth versus
ambient temperature
VCC = 5.5 V
3.0 V
2.7 V
2
−15
10
35
0
−40
60
85
Tamb (°C)
Fig 17. Post detection amplifier versus
ambient temperature
voltage
(V)
ILO
(nA)
40
VCC = 5.5 V
3.0 V
2.7 V
10
35
60
85
Tamb (°C)
Fig 18. Post detection amplifier 3 dB bandwidth
versus ambient temperature
aaa-013834
60
−15
aaa-013835
16
12
8
VCC = 5.5 V
3.0 V
2.7 V
4
20
0
0
−4
−20
−40
−15
10
35
85
60
Tamb (°C)
Fig 19. Switch output leakage current versus
ambient temperature
SA639
Product data sheet
−8
−40
−15
10
35
60
85
Tamb (°C)
Fig 20. Switch output to input offset voltage versus
ambient temperature
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18 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
1 200 mV
2
5.00 mV
−376 ns
200 ns/
1
RUN
RSSI OUTPUT
90 %
tr = 0.79 μs
RF INPUT f = 110 MHz
2
LEVEL = −28 dBm
PULSE
MODULATED
@ 10 kHz
t1 = −376.0 ns
t2 = 412.0 ns
∆t = 788.0 ns
1/∆t = 1.269 MHz
aaa-013836
Fig 21. RSSI rise time
1 200 mV
2 5.00 mV
−1.36 μs
500 ns/
1
RUN
RSSI OUTPUT
tf = 1.89 μs
10 %
RF INPUT f = 110 MHz
2
LEVEL = −28 dBm
PULSE
MODULATED
@ 10 kHz
t1 = −1.360 μs
t2 = 440.0 ns
∆t = 1.800 μs
1/∆t = 555.6 kHz
aaa-013837
Fig 22. RSSI fall time
SA639
Product data sheet
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19 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
1
50 mV
2
50 mV
4 1.0 V
2 μs/div
1 POSTAMP
OUTPUT
RF = 110 MHz
Dev = 288 kHz
Data Rate = 576 kHz sine
LO = 119.8 MHz
VCC = 3 V, T = 27 °C
DATA
SWITCH
OUTPUT
4
2
SWITCH
ENABLE
All channels
are DC-coupled
data switch open
aaa-013902
Fig 23. System dynamic response
1 500 mV
2
2.00 V
0.00 s
50.0 ns/
2
RUN
VCC = 3 V, T = 25 °C
Switch input = 1.6 V (DC)
SWITCH OUTPUT
1
SWITCH ENABLE
2
V1 (1) = 0.000 V
V2 (1) = 1.609 V
∆V (1) = 1.609 V
aaa-013903
Fig 24. Data switch activation time
SA639
Product data sheet
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20 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
14. Test information
C28
0.1 μF 1.5 nF
MIXER_OUT
330 nH
SMA
RF input
J1
1 nF
C1
5 pF to 30 pF
110.592 MHz
± 288 kHz
U1
L1
180 nH
RF_IN
RF_BYPASS
SMA
LO input
J2
C5
5 pF to 30 pF
120.392 MHz
at −10 dBm
C6
39 pF
68 pF
SA639DH/01
C2
15 pF
C3
10 nF
C4
1 nF
OSC_OUT
OSC_IN
L2
120 nH
1
2
24
23
330 pF
IF_AMP_DECOUPL
22
21
68 pF
C26
0.1 μF
6.49 kΩ
IF_AMP_IN
3
4
0.1 μF
IF_AMP_IN
+3 V
VCC
C7
15 μF
GND
RSSI_OUT
RSSI
POWER_DOWN_CTRL
PWR DWN
DATA_OUT
DATA OUT
2.2 μF
RL
10 kΩ
5
C8
RSSI_FEEDBACK
6
100 nF
CL
30 pF
POSTAMP_IN
POSTAMP_OUT
J3
R6
10 kΩ
SWITCH_CTRL
POSTAMP_IN
20
19
7
18
8
17
9
16
IF_AMP_OUT
IF_AMP_OUT
11
12
100 pF
100 pF
RL 2.2 μF
10 kΩ
560 Ω
LIMITER_IN
LIMITER_DECOUPL
LIMITER_DECOUPL
C18
0.1 μF
330 pF
680 nH
6.49 kΩ
LIMITER_IN
0.1 μF
348 Ω
C19
0.1 μF
50 Ω
1 kΩ
LIMITER_OUT
LIMITER_OUT
0.1 μF
QUADRATURE_IN
14
SWITCH_OUT
13
R7
510 Ω
POSTAMP_OUT
50 Ω
GND
10
15
50 Ω
1 kΩ
0.1 μF
VCC
348 Ω
IF_AMP_DECOUPL
0.1 μF
R8
10 Ω
680 nH
MIXER_OUT
50 Ω
C13
10 nF
CL
33 pF
10 kΩ
C14
33 pF
C15
6.8 pF
R9
1.3 kΩ
C16
5 pF to
30 pF
C17
15 pF
SWITCH_CTRL
SWITCH_OUT
QUADRATURE_IN
DC
L3
4.7 μH
002aag719
Fig 25. SA639 test circuit
SA639
Product data sheet
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21 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
15. Package outline
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
D
SOT355-1
E
A
X
c
HE
y
v M A
Z
13
24
Q
A2
(A 3)
A1
pin 1 index
A
θ
Lp
L
1
12
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.1
0.15
0.05
0.95
0.80
0.25
0.30
0.19
0.2
0.1
7.9
7.7
4.5
4.3
0.65
6.6
6.2
1
0.75
0.50
0.4
0.3
0.2
0.13
0.1
0.5
0.2
8o
0o
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT355-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
MO-153
Fig 26. Package outline SOT355-1 (TSSOP24)
SA639
Product data sheet
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22 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
16. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
16.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
16.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
16.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
16.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 27) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 9 and 10
Table 9.
SnPb eutectic process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
 350
< 2.5
235
220
 2.5
220
220
Table 10.
Lead-free process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 27.
SA639
Product data sheet
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24 of 29
SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
maximum peak temperature
= MSL limit, damage level
temperature
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 27. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
17. Abbreviations
Table 11.
SA639
Product data sheet
Abbreviations
Acronym
Description
AM
Amplitude Modulation
ASK
Amplitude Shift Keying
CMOS
Complementary Metal-Oxide Semiconductor
DECT
Digital European Cordless Telephone
ESD
ElectroStatic Discharge
FM
Frequency Modulation
FSK
Frequency Shift Keying
IF
Intermediate Frequency
LC
inductor-capacitor network
LO
Local Oscillator
PCB
Printed-Circuit Board
RC
resistor-capacitor network
RF
Radio Frequency
RSSI
Received Signal Strength Indicator
THD
Total Harmonic Distortion
TTL
Transistor-Transistor Logic
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
18. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
SA639 v.4
20140710
Product data sheet
-
SA639 v.3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP
Semiconductors.
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Table 1 “Ordering information”: Type number SA639DH is replaced with SA639DH/01
Added Section 4.1 “Ordering options”
Added Section 6.2 “Pin description”
– Pin 3 name changed from “XTAL OSC (EMITTER)” to “OSC_OUT”
– Pin 4 name changed from “XTAL OSC (BASE)” to “OSC_IN”
•
•
Added Table 6 “Thermal characteristics”
Table 7 “Static characteristics”:
– deleted column ‘3’
– deleted column ‘+3’
•
Table 8 “Dynamic characteristics”:
– deleted column ‘3’
– deleted column ‘+3’
– deleted (old) Table note [7] “Standard deviations are measured based on application of 60 parts.”
•
Figure 5 “Mixer conversion power gain versus ambient temperature”:
– Note corrected from “RF = 40 dBm, 110.392 MHz” to “RF = 40 dBm, 110.592 MHz”
– Note corrected from “LO = 10 dBm, 120.592 MHz” to “LO = 10 dBm, 120.392 MHz”
•
Figure 6 “Mixer input third-order intercept point versus ambient temperature”:
– Note corrected from “RF = 40 dBm, 110.392 MHz” to “RF = 40 dBm, 110.592 MHz”
– Note corrected from “LO = 10 dBm, 120.592 MHz” to “LO = 10 dBm, 120.392 MHz”
•
•
•
•
Figure 10 “Receiver RF performance”: note corrected from “RF = 110 kHz” to “RF = 110 MHz'
Figure 25 “SA639 test circuit” updated
Added Section 16 “Soldering of SMD packages”
Added Section 17 “Abbreviations”
SA639 v.3
19980210
Product specification
ECN 853-1792 18944
dated 1998 Feb 10
SA639 v.2
SA639 v.2
19980210
Product specification
ECN 853-1792 18944
dated 1998 Feb 10
SA639 v.1
SA639 v.1
19960531
Product specification
ECN 853-1792 16895
dated 1996 May 31
-
SA639
Product data sheet
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SA639
NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
19. Legal information
19.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 10 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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Low voltage mixer FM IF system with filter amplifier and data switch
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
SA639
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 10 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
28 of 29
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NXP Semiconductors
Low voltage mixer FM IF system with filter amplifier and data switch
21. Contents
1
2
3
4
4.1
5
6
6.1
6.2
7
7.1
7.1.1
7.1.2
8
9
10
11
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
19
19.1
19.2
19.3
19.4
20
21
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
Circuit description . . . . . . . . . . . . . . . . . . . . . . . 5
Post detection filter amplifier . . . . . . . . . . . . . . 5
Data switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 7
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal characteristics . . . . . . . . . . . . . . . . . 11
Static characteristics. . . . . . . . . . . . . . . . . . . . 12
Dynamic characteristics . . . . . . . . . . . . . . . . . 13
Performance curves . . . . . . . . . . . . . . . . . . . . 15
Test information . . . . . . . . . . . . . . . . . . . . . . . . 21
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
Soldering of SMD packages . . . . . . . . . . . . . . 23
Introduction to soldering . . . . . . . . . . . . . . . . . 23
Wave and reflow soldering . . . . . . . . . . . . . . . 23
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 23
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 24
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 26
Legal information. . . . . . . . . . . . . . . . . . . . . . . 27
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 27
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Contact information. . . . . . . . . . . . . . . . . . . . . 28
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 July 2014
Document identifier: SA639