Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6V13250H
Rev. 1, 7/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V13250HR3
MRF6V13250HSR3
RF Power transistors designed for CW and pulsed applications operating at
1300 MHz. These devices are suitable for use in CW and pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
250 Peak
1300
22.7
57.0
--18
Signal Type
Pulsed (200 μsec,
10% Duty Cycle)
1300 MHz, 250 W, 50 V
LATERAL N--CHANNEL
RF POWER MOSFETs
• Typical CW Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 61°C
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
CW
230 CW
1300
20.0
53.0
--25
• Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles, 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 20 V to 50 V for Extended Power Range
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
CASE 465--06, STYLE 1
NI--780
MRF6V13250HR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V13250HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +120
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
TJ
225
°C
PD
476
2.38
W
W/°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty
Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz
°C/W
ZθJC
RθJC
0.07
0.42
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
μAdc
120
—
—
Vdc
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mA)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 90 Vdc, VGS = 0 Vdc)
IDSS
—
—
20
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 640 μAdc)
VGS(th)
1.0
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.4
3.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.58 Adc)
VDS(on)
0.1
0.25
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.2
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
58
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
340
—
pF
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz
Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
21.5
22.7
24.0
dB
Drain Efficiency
ηD
53.5
57.0
—
%
Input Return Loss
IRL
—
--18
--9
dB
Typical CW Performance (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 230 W CW, f = 1300 MHz, TC = 61°C
Power Gain
Gps
—
20.0
—
dB
Drain Efficiency
ηD
—
53.0
—
%
Input Return Loss
IRL
—
--25
—
dB
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.),
f = 1300 MHz, Pulsed, 200 μsec Pulse Width, 10% Duty Cycle
VSWR 10:1 at all Phase Angles
Ψ
No Degradation in Output Power
1. Part internally input matched.
MRF6V13250HR3 MRF6V13250HSR3
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
Z19
Z10
+
C1
C2
C3
C4
C7
Z18
C8
C9
C10
C11
C12
Z9
RF
INPUT
Z11
Z1
VSUPPLY
+
+
Z2
Z3
Z4
Z5
Z6
Z7
Z12
Z13
Z14
Z15
Z16
C6
Z8
C5
Z17
RF
OUTPUT
DUT
Z20
Z21
+
C18
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9*
Z10
0.447″ x 0.063″ Microstrip
0.030″ x 0.084″ Microstrip
0.120″ x 0.063″ Microstrip
0.855″ x 0.293″ Microstrip
0.369″ x 0.825″ Microstrip
0.203″ x 0.516″ Microstrip
0.105″ x 0.530″ Microstrip
0.105″ x 0.530″ Microstrip
0.116″ x 0.050″ Microstrip
0.122″ x 0.050″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18, Z20
Z19*, Z21*
C17
C16
C15
C14
VSUPPLY
C13
0.162″ x 1.160″ Microstrip
0.419″ x 1.160″ Microstrip
0.468″ x 0.994″ Microstrip
0.131″ x 0.472″ Microstrip
0.264″ x 0.222″ Microstrip
0.500″ x 0.111″ Microstrip
0.291″ x 0.063″ Microstrip
0.105″ x 0.388″ Microstrip
0.854″ x 0.052″ Microstrip
*Line length includes microstrip bends.
Figure 1. MRF6V13250HR3(HSR3) Test Circuit Schematic — 1300 MHz
Table 5. MRF6V13250HR3(HSR3) Test Circuit Component Designations and Values — 1300 MHz
Part
Description
Part Number
Manufacturer
C1, C2
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C3, C11, C14
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKWS
AVX
C4, C6, C7, C18
100 pF Chip Capacitors
ATC800B101JT500XT
ATC
C5
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C8, C17
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C9, C16
1000 pF Chip Capacitors
ATC700B102FT50XT
ATC
C10, C15
10K pF Chip Capacitors
ATC200B103KT50XT
ATC
C12, C13
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1
15 Ω, 1/4 W Chip Resistor
CRCW120615R0FKEA
Vishay
PCB
0.030″, εr = 3.50
RO4350B
Rogers
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
3
C1 C2
C5
C7
C4
R1
C9
C8
C11
C12
C10
C6
CUT OUT AREA
C3
C18 C17
MRF6V13250H/HS
Rev 3
C15
C13
C16 C14
Figure 2. MRF6V13250HR3(HSR3) Test Circuit Component Layout — 1300 MHz
MRF6V13250HR3 MRF6V13250HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — PULSED
60
Pout, OUTPUT POWER (dBm) PULSED
1000
100
Coss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
Crss
1
10
20
40
30
57
P2dB = 55.1 dBm
(326 W)
56
P1dB = 54.7 dBm
(293 W)
55
Actual
54
31
30
50
32
33
34
35
36
37
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Pin, INPUT POWER (dBm) PULSED
Figure 3. Capacitance versus Drain--Source Voltage
Figure 4. Pulsed Output Power versus
Input Power
70
25
60
23
22
50
21
40
Gps
20
30
20
19
ηD
10
18
17
1
10
0
500
100
21
19
40 V
17
45 V
VDD = 50 V
35 V
30 V
15
11
IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
25 V
13
20 V
0
50
100
150
200
250
300
350
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 6. Pulsed Power Gain versus
Output Power
24
70
25 V
50
35 V
30 V
45 V
40 V
VDD = 50 V
20 V
40
30
IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
20
0
50
100
150
200
250
300
350
VDD = 50 Vdc
IDQ = 100 mA
f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
23
Gps, POWER GAIN (dB)
60
10
Gps, POWER GAIN (dB)
VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz
23 Pulse Width = 200, μsec Duty Cycle = 10%
ηD, DRAIN EFFICIENCY (%)
24
Gps, POWER GAIN (dB)
P3dB = 55.4 dBm
(345 W)
58
53
0
ηD, DRAIN EFFICIENCY (%)
Ideal
22
--30_C
50
40
85_C
TC = --30_C
19
30
ηD
25_C
20
25_C
10
18
85_C
17
400
70
60
Gps
21
20
400
ηD, DRAIN EFFICIENCY (%)
C, CAPACITANCE (pF)
Ciss
VDD = 50 Vdc, IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec, Duty Cycle = 10%
59
3
10
100
0
500
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Efficiency versus
Output Power
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — CW
25
60
Gps, POWER GAIN (dB)
23
55
10 mA
Gps
IDQ = 700 mA
50
700 mA
22
21
45
300 mA
300 mA
40
10 mA
20
35
19
30
ηD
18
VDD = 50 Vdc
f = 1300 MHz
TC = 61°C (1)
17
16
20
40
60
25
ηD, DRAIN EFFICIENCY (%)
24
20
15
80 100 120 140 160 180 200 220 240 260 280
Pout, OUTPUT POWER (WATTS) CW
1. Data for graph was collected in a water cooled test fixture.
The water inlet temperature = 25°C.
Figure 9. CW Power Gain and Drain Efficiency
versus Output Power
109
VDD = 50 Vdc
Pout = 230 W CW
ηD = 53%
MTTF (HOURS)
108
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 10. MTTF versus Junction Temperature — CW
MRF6V13250HR3 MRF6V13250HSR3
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zsource
Zload
f = 1300 MHz
f = 1300 MHz
VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak
f
MHz
Zsource
Ω
Zload
Ω
1300
5.32 + j4.11
1.17 + j1.48
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance — Pulsed
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6V13250HR3 MRF6V13250HSR3
8
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
9
MRF6V13250HR3 MRF6V13250HSR3
10
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6V13250H and MRF6V13250HS parts will be available for 2 years after release of
MRF6V13250H and MRF6V13250HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6V13250H and MRF6V13250HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2011
• Initial Release of Data Sheet
1
July 2011
• Added CW information to data sheet including:
-- Typical Performance Frequency tables, p. 1, 2
-- CW Capable bullet and Thermal Characteristics, p. 1
-- Fig. 9, CW Power Gain and Drain Efficiency versus Output Power, p. 6
-- Fig. 10, MTTF versus Junction Temperature -- CW, p. 6
MRF6V13250HR3 MRF6V13250HSR3
12
RF Device Data
Freescale Semiconductor
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MRF6V13250HR3 MRF6V13250HSR3
Document
Number:
RF
Device
Data MRF6V13250H
Rev. 1, 7/2011
Freescale
Semiconductor
13