Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF282
Rev. 15, 5/2006
RF Power Field Effect Transistors
MRF282SR1
MRF282ZR1
Designed for Class A and Class AB PCN and PCS base station applications
with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and
multicarrier amplifier applications.
• Specified Two--Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts PEP
Power Gain — 10.5 dB
Efficiency — 28%
Intermodulation Distortion — --31 dBc
• Specified Single--Tone Performance @ 2000 MHz, 26 Volts
Output Power — 10 Watts CW
Power Gain — 9.5 dB
Efficiency — 35%
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts CW Output Power
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large--Signal
Impedance Parameters
• RoHS Compliant
• Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
2000 MHz, 10 W, 26 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458B--03, STYLE 1
NI--200S
MRF282SR1
CASE 458C--03, STYLE 1
NI--200Z
MRF282ZR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
± 20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
60
0.34
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
4.2
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFETs
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
1.0
μAdc
Gate--Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
—
1.0
μAdc
Characteristic
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF282SR1 MRF282ZR1
1
Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 μAdc)
VGS(th)
2.0
3.0
4.0
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
—
0.4
0.6
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
VGS(q)
3.0
4.0
5.0
Vdc
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
15
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
8.0
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Crss
—
0.45
—
pF
Common--Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
10.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
28
—
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
--31
--28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
--14
--9
dB
Common--Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps
10.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
28
—
—
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
--31
--28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
--14
--9
dB
Common--Source Power Gain
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Gps
9.5
11.5
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
η
35
40
—
%
On Characteristics
Functional Tests (In Freescale Test Fixture)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Dynamic Characteristics
MRF282SR1 MRF282ZR1
2
RF Device Data
Freescale Semiconductor
VGG
RF
INPUT
R4
+
C3
B1
R1
C4
B2
C5
Z6
Z12
C8
C7
C10
Z1
Z2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z3
C2
Z4
Z7
C6
B4
B3
C11
+
C16
C13
Z11
Z5
C1
ARCHIVE INFORMATION
R5
R3
C9
0.491″ x 0.080″ Microstrip
0.253″ x 0.080″ Microstrip
0.632″ x 0.080″ Microstrip
0.567″ x 0.080″ Microstrip
1.139″ x 0.055″ Microstrip
0.236″ x 0.055″ Microstrip
0.180″ x 0.325″ Microstrip
0.301″ x 0.325″ Microstrip
0.439″ x 0.325″ Microstrip
0.055″ x 0.325″ Microstrip
Z10
Z9
Z8
DUT
Z13
C14
C12
Z11
Z12
Z13
Z14
Z15
Z16
Raw Board
Material
Z14
Z15
C15
Z16
RF
OUTPUT
C17
0.636″ x 0.055″ Microstrip
0.303″ x 0.055″ Microstrip
0.463″ x 0.080″ Microstrip
0.105″ x 0.080″ Microstrip
0.452″ ± 0.085″ x 0.080″ Microstrip
0.910″ ± 0.085″ x 0.080″ Microstrip
0.030″ Glass Teflon®, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300--55--22, εr = 2.55
Figure 1. 1930 -- 2000 MHz Broadband Test Circuit Schematic
Table 4. 1930 -- 2000 MHz Broadband Test Circuit Component Designations and Values
Designators
VDD
C18
Description
B1, B4
Surface Mount Ferrite Beads, 0.120″ x 0.333″ x 0.100″, Fair Rite #2743019446
B2, B3
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
C1, C2, C9
0.8--8.0 pF Variable Capacitors, Johanson Gigatrim #27291SL
C3
10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394
C4, C5, C13, C16
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
C6
200 pF Chip Capacitor, ATC #100B201JCA500X
C7
18 pF Chip Capacitor, ATC #100B180KP500X
C8
39 pF Chip Capacitor, ATC #100B390JCA500X
C10
27 pF Chip Capacitor, ATC #100B270JCA500X
C11
1.2 pF Chip Capacitor, ATC #100B1R2CCA500X
C12
0.6--4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
C14
0.5 pF Chip Capacitor, ATC #100B0R5BCA500X
C15
15 pF Chip Capacitor, ATC #100B150JCA500X
C17
0.1 pF Chip Capacitor, ATC #100B0R1BCA500X
C18
22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T491X226K035AS4394
R1
560 kΩ, 1/4 W Chip Resistor, 0.08″ x 0.13″
R2, R5
12 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B120JT
R3, R4
91 Ω, 1/4 W Chip Resistors, 0.08″ x 0.13″, Garrett Instruments #RM73B2B910JT
WS1, WS2
Beryllium Copper Wear Blocks 0.010″ x 0.235″ x 0.135″ NOM
ARCHIVE INFORMATION
R2
Brass Banana Jack and Nut
Red Banana Jack and Nut
Green Banana Jack and Nut
Type “N” Jack Connectors, Omni--Spectra # 3052--1648--10
4--40 Ph Head Screws, 0.125″ Long
4--40 Ph Head Screws, 0.188″ Long
4--40 Ph Head Screws, 0.312″ Long
4--40 Ph Rec. Hd. Screws, 0.438″ Long
RF Circuit Board
3″ x 5″ Copper Clad PCB, Glass Teflon®
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
3
R1
C5
C4
R2
C18
C13
C7
B2
R5
C8
B1
R3
R4
B4
C10
B3
C11
C16
C3
WS1
C15
WS2
C14
ARCHIVE INFORMATION
C1
C2
C9
C17
C12
MRF282
Rev--0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. 1930 -- 2000 MHz Broadband Test Circuit Component Layout
ARCHIVE INFORMATION
C6
MRF282SR1 MRF282ZR1
4
RF Device Data
Freescale Semiconductor
+
C1
VGG
RF
INPUT
B1
L1
Z2
Z1
ARCHIVE INFORMATION
C4
Z3
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
R3
R2
L2
B2
Z4
C7
C6
B3
Z5
C5
L3
Z6
C8
Z7
C14
C11
DUT
C9
C3
0.122″ x 0.08″ Microstrip
0.650″ x 0.08″ Microstrip
0.160″ x 0.08″ Microstrip
0.030″ x 0.08″ Microstrip
0.045″ x 0.08″ Microstrip
0.291″ x 0.08″ Microstrip
0.483″ x 0.330″ Microstrip
Z8
Z9
Z10
Z11
Raw Board
Material
Z8
R4
R5
R6
B5
C10
B4
C13
B6
L4
Z9
C12
Z10
L5
C16
C15
VDD
RF
OUTPUT
Z11
C17
0.414″ x 0.330″ Microstrip
0.392″ x 0.08″ Microstrip
0.070″ x 0.08″ Microstrip
1.110″ x 0.08″ Microstrip
0.030″ Glass Teflon®, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300--55--22, εr = 2.55
Figure 3. 1810 -- 1880 MHz Broadband Test Circuit Schematic
Table 5. 1810 -- 1880 MHz Broadband Test Circuit Component Designations and Values
Designators
+
Description
B1, B2, B3, B4, B5, B6
Surface Mount Ferrite Beads, 0.120″ x 0.170″ x 0.100″, Fair Rite #2743029446
C1, C16
470 μF, 63 V Electrolytic Capacitors, Mallory #SME63UB471M12X25L
C2, C9, C12, C17
0.6--4.5 pF Variable Capacitors, Johanson Gigatrim #27271SL
C3
0.8--8.0 pF Variable Capacitor, Johanson Gigatrim #27291SL
C4, C13
0.1 μF Chip Capacitors, Kemet #CDR33BX104AKWS
C5, C14
100 pF Chip Capacitors, ATC #100B101JCA500X
C6, C8, C11, C15
12 pF Chip Capacitors, ATC #100B120JCA500X
C7, C10
1000 pF Chip Capacitors, ATC #100B102JCA50X
L1
3 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.053″ Long, 6.0 nH
L2
5 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.091″ Long, 15 nH
L3, L4
9 Turns, 26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
L5
4 Turns, 27 AWG, 0.087″ OD, 0.050″ ID, 0.078″ Long, 10 nH
R1, R2, R3
12 Ω, 1/8 W Fixed Film Chip Resistors, Garrett Instruments #RM73B2B120JT
R4, R5, R6
0.08″ x 0.13″ Resistors, Garrett Instruments #RM73B2B120JT
W1, W2
Beryllium Copper 0.010″ x 0.110″ x 0.210″
ARCHIVE INFORMATION
R1
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
5
VSUPPLY
+
R5
R1
R2
C1
VDD
Q1
Q2
R4
ARCHIVE INFORMATION
R7
B2
B1
R6
C13
+
C2
C4
C5
B3
C6
C8
R8
C9
+
R9
C14
R10
C16
C18
C20
L2
RF
INPUT
L1
Z1
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z2
DUT
Z3
C7
Z5
Z6
Z7
Z4
C11
C10
0.624″ x 0.08″ Microstrip
0.725″ x 0.08″ Microstrip
0.455″ x 0.08″ Microstrip
0.530″ x 0.330″ Microstrip
0.280″ x 0.330″ Microstrip
0.212″ x 0.330″ Microstrip
C15
C12
Z7
Z8
Z9
Raw Board
Material
C17
Z9
C19
0.408″ x 0.08″ Microstrip
0.990″ x 0.08″ Microstrip
0.295″ x 0.08″ Microstrip
0.030″ Glass Teflon®, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300--55--22, εr = 2.55
Figure 4. Class A Broadband Test Circuit Schematic
Table 6. Class A Broadband Test Circuit Component Designations and Values
Designators
Z8
Description
B1, B2, B3
Ferrite Beads, Ferroxcube #56--590--65--3B
C1, C20
470 μF, 63 V Electrolytic Capacitors, Mallory #SME63V471M12X25L
C2
0.01 μF Chip Capacitor, ATC #100B103JCA50X
C3, C10, C15
0.6--4.5 pF Variable Capacitors, Johanson #27271SL
C4, C16
0.02 μF Chip Capacitors, ATC #100B203JCA50X
C5
100 μF, 50 V Electrolytic Capacitor, Mallory #SME50VB101M12X256
C6, C7, C9, C14, C17
12 pF Chip Capacitors, ATC #100B120JCA500X
C8, C13
51 pF Chip Capacitors, ATC #100B510JCA500X
C11, C12
0.3 pF Chip Capacitors, ATC #100B0R3CCA500X
C18
0.1 μF Chip Capacitor, Kemet #CDR33BX104AKWS
C19
0.4--2.5 pF Variable Capacitor, Johanson #27285
L1
8 Turns, 0.042″ ID, 24 AWG, Enamel
L2
9 Turns, 0.046″ ID, 26 AWG, Enamel
Q1
NPN, 15 W, Bipolar Transistor, MJD310
Q2
PNP, 15 W, Bipolar Transistor, MJD320
R1
200 Ω, 1/4 W Axial Resistor
R2
1.0 kΩ, 1/2 W Potentiometer, Bourns
R3
13 kΩ, 1/4 W Axial Resistor
R4, R6, R7
390 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B391JT
R5
1.0 Ω, 10 W 1% Resistor, Dale #RE65G1R00
R8, R9, R10
12 Ω, 1/8 W Chip Resistors, Garrett Instruments #RM73B2B120JT
Input/Output
Type N Flange Mount RF55--22 Connectors, Omni--Spectra
VDD
ARCHIVE INFORMATION
R3
RF
OUTPUT
MRF282SR1 MRF282ZR1
6
RF Device Data
Freescale Semiconductor
f = 2000 MHz
Zin
f = 1800 MHz
f = 2000 MHz
ZOL*
f = 1800 MHz
VDD = 26 V, IDQ = 75 mA, Pout = 10 W (PEP)
f
MHz
Zin
Zin
Ω
ZOL*
Ω
1800
2.1 + j1.0
3.8 -- j0.15
1860
2.05 + j1.15
3.77 -- j0.13
1900
2.0 + j1.2
3.75 -- j0.1
1960
1.9 + j1.4
3.65 + j0.1
2000
1.85 + j1.6
3.55 + j0.2
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load
impedance at given output power, voltage, IMD,
bias current and frequency.
Input
Matching
Network
Output
Matching
Network
Device
Under Test
Z
in
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 5 Ω
Z
*
OL
Figure 5. Series Equivalent Input and Output Impedence
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
7
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF282SR1 MRF282ZR1
8
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF282SR1 MRF282ZR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
ccc
T A
M
B
M
M
M
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT
CENTERLINE UNLESS OTHERWISE NOTED.
(INSULATOR)
R
1
2X
ccc
M
B
M
Z
K
S (INSULATOR)
ccc M T A M
2
ARCHIVE INFORMATION
T A
M
B
B
M
D
2X
bbb
T A
M
B
M
3
M
B
(FLANGE)
ccc
T A
M
B
M
M
DIM
A
B
C
D
E
F
H
K
M
N
R
S
Z
bbb
ccc
INCHES
MIN
MAX
0.180
0.190
0.140
0.150
0.082
0.116
0.047
0.053
0.004
0.010
0.004
0.006
0.025
0.031
0.060
0.110
0.197
0.203
0.177
0.183
0.147
0.153
0.157
0.163
-----0.020
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
4.572
4.83
3.556
3.81
2.083
2.946
1.194
1.346
0.102
0.254
0.102
0.152
0.635
0.787
1.524
2.794
5.004
5.156
4.496
4.648
3.734
3.886
3.988
4.14
-----0.508
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
N
(LID)
E
F
C
H
A
T
A
CASE 458B--03
ISSUE E
NI--200S
MRF282SR1
SEATING
PLANE
(FLANGE)
ccc
T A
M
M
B
M
F
M
(INSULATOR)
4X
Z
R
ccc
1
Y
(LID)
M
T A
M
B
M
3
S
B
(INSULATOR)
ccc
M
T A
M
B
(FLANGE)
M
B
2
2X
D
bbb
M
T A
ccc
M
B
M
T A
2X
K
M
B
M
M
N
(LID)
H
E
A
C
A
(FLANGE)
T
SEATING
PLANE
NOTES:
1. CONTROLLING DIMENSIONS: INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H (PACKAGE COPLANARITY): THE
BOTTOM OF LEADS AND REFERENCE PLANE T
MUST BE COPLANAR WITHIN DIMENSION H.
DIM
A
B
C
D
E
F
H
K
M
N
R
S
Y
Z
bbb
ccc
INCHES
MIN
MAX
0.180
0.190
0.140
0.150
0.082
0.116
0.047
0.053
0.004
0.010
0.004
0.006
0.000
0.004
0.050
0.090
0.197
0.203
0.177
0.183
0.147
0.153
0.157
0.163
0.020
0.040
------ R .020
.010 REF
.015 REF
MILLIMETERS
MIN
MAX
4.572
4.830
3.556
3.810
2.083
2.946
1.194
1.346
0.102
0.254
0.102
0.152
0.000
0.102
1.270
2.286
5.004
5.156
4.496
4.648
3.734
3.886
3.988
4.140
0.508
1.016
------ R .508
0.254 REF
0.381 REF
ARCHIVE INFORMATION
4X
(LID)
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 458C--03
ISSUE E
NI--200Z
MRF282ZR1
MRF282SR1 MRF282ZR1
RF Device Data
Freescale Semiconductor
11
REVISION HISTORY
The following table summarizes revisions to this document.
Date
15
Oct. 2008
Description
• MRF282 Rev. 15 data sheet archived. Data sheet split due to change in part life cycle. See MRF282--1
Rev. 16 for MRF282SR1 and MRF282--2 Rev. 17 for MRF282ZR1.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Revision
MRF282SR1 MRF282ZR1
12
RF Device Data
Freescale Semiconductor
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