Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation. Typical CW Performance at 2450 MHz, VDD = 28 Vdc, IDQ = 1200 mA, Pout = 140 W Power Gain — 13.2 dB Drain Efficiency — 45% Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 W CW Output Power Features 2450 MHz, 140 W CW, 28 V INDUSTRIAL HEATING, RUGGED RF POWER LDMOS TRANSISTOR Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified up to a Maximum of 32 VDD Operation Integrated ESD Protection In Tape and Reel. R5 Suffix = 50 Units per 56 mm Tape Width, 13--inch Reel. NI--880H--2L 1 Drain Gate 2 (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (1,2) TJ 225 C Symbol Value (2,3) Unit RJC 0.29 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 82C, 140 W CW 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MHT1000HR5 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 2 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f = 2390 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 15.2 17 dB Drain Efficiency D 23 25 — % Intermodulation Distortion IM3 — --37 --35 dBc ACPR — --40 --38 dBc IRL — --15 — dB Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MHT1000HR5 2 RF Device Data Freescale Semiconductor, Inc. VBIAS R1 C8 + + C10 C9 B1 VSUPPLY + C5 C7 C15 C16 C17 C18 Z14 C3 RF INPUT Z1 Z2 Z3 Z9 Z8 Z11 Z12 Z13 Z6 Z5 Z4 C2 Z15 C1 Z7 DUT + C4 C12 + + C14 C13 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z10 RF OUTPUT C6 C19 C20 C21 C22 B2 C11 0.678 x 0.068 Microstrip 0.466 x 0.068 Microstrip 0.785 x 0.200 Microstrip 0.200 x 0.530 Microstrip 0.025 x 0.530 Microstrip 0.178 x 0.050 Microstrip 0.097 x 1.170 Microstrip Z9 Z10 Z11 Z12 Z13 Z14, Z15 PCB 0.193 x 1.170 Microstrip 0.115 x 0.550 Microstrip 0.250 x 0.110 Microstrip 0.538 x 0.068 Microstrip 0.957 x 0.068 Microstrip 0.673 x 0.095 Microstrip Taconic RF--35 0.030, r = 3.5 Figure 1. MHT1000HR5 Test Circuit Schematic — 2450 MHz Table 5. MHT1000HR5 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 47 , 100 MHz Short Ferrite Beads, Surface Mount 2743019447 Fair--Rite C1, C2, C3, C4, C5, C6 5.6 pF Chip Capacitors ATC600B5R6BT500XT ATC C7, C11 0.01 F, 100 V Chip Capacitors C1825C103J1RAC Kemet C8, C12, C15, C19 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C9, C13 22 F, 25 V Tantalum Capacitors T491D226M025AT Kemet C10, C14 47 F, 16 V Tantalum Capacitors T491D476K016AT Kemet C16, C17, C20, C21 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C18, C22 220 F, 50 V Electrolytic Capacitors 2222--150--95102 Vishay R1 240 , 1/4 W Chip Resistor CRC12062400FKEA Vishay MHT1000HR5 RF Device Data Freescale Semiconductor, Inc. 3 C17 C5 B1 + + + R 1 C10 C9 C8* C15 C7* C18 C16 C3 C 4 + + C13 C12* C19 C20 + C14 C2 CUT OUT AREA C 1 B2 C11* C 6 C21 C22 * Stacked Figure 2. MHT1000HR5 Test Circuit Component Layout MHT1000HR5 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2450 MHz 50 IDQ = 1200 mA f = 2450 MHz VDD = 28 V 32 V Gps, POWER GAIN (dB) 15 40 30 V Gps 14 30 20 13 32 V 12 D 28 V 11 10 1 10 D, DRAIN EFFICIENCY (%) 16 30 V 100 0 500 Pout, OUTPUT POWER (WATTS) CW Figure 3. Power Gain and Drain Efficiency versus CW Output Power as a Function of VDD 14.5 60 Gps 50 13.5 40 13 30 12.5 20 VDD = 32 V IDQ = 1200 mA f = 2450 MHz 12 D 11.5 10 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 14 0 100 10 1 Pout, OUTPUT POWER (WATTS) CW Figure 4. Power Gain and Drain Efficiency versus CW Output Power 15 Gps Gps, POWER GAIN (dB) 14 1000 mA 13 1200 mA 1400 mA 1100 mA 1300 mA 12 VDD = 28 V f = 2450 MHz 11 10 1 10 100 300 Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Drain Efficiency versus CW Output Power as a Function of Total IDQ MHT1000HR5 RF Device Data Freescale Semiconductor, Inc. 5 f = 2450 MHz Zsource Zo = 10 Zload f = 2450 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 140 W CW f MHz Zsource Zload 2450 4.55 + j4.9 1.64 -- j6.57 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 6. Series Equivalent Source and Load Impedance MHT1000HR5 6 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MHT1000HR5 RF Device Data Freescale Semiconductor, Inc. 7 MHT1000HR5 8 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2014 Description Initial Release of Data Sheet MHT1000HR5 RF Device Data Freescale Semiconductor, Inc. 9 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. MHT1000HR5 Document Number: MHT1000H Rev. 10 0, 5/2014 RF Device Data Freescale Semiconductor, Inc.