FREESCALE MRF6S24140HR3_08

Freescale Semiconductor
Technical Data
Document Number: MRF6S24140H
Rev. 1, 4/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S24140HR3
MRF6S24140HSR3
Designed primarily for large - signal output applications at 2450 MHz.
Devices are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA,
Pout = 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2450 MHz, 140 W, 28 V
CW
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S24140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S24140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW
RθJC
0.29
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S24140HR3 MRF6S24140HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
2
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f1 = 2300 MHz, f2 =
2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
13
15.2
17
dB
Drain Efficiency
ηD
23
25
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 40
- 38
dBc
IRL
—
- 15
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
MRF6S24140HR3 MRF6S24140HSR3
2
RF Device Data
Freescale Semiconductor
R1
C8
VBIAS
+
+
C10
C9
B1
VSUPPLY
+
C5
C15
C16
C17
C18
C7
Z14
C3
RF
INPUT
Z1
Z2
Z3
Z8
Z10
Z9
Z11
Z12
Z4
C2
Z15
C1
Z7
DUT
+
C4
C6
C12
C19
C20
C21
C22
B2
+
+
C14
C13
C11
0.678″
0.466″
0.785″
0.200″
0.025″
0.178″
0.097″
x 0.068″
x 0.068″
x 0.200″
x 0.530″
x 0.530″
x 0.050″
x 1.170″
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z13
Z6
Z5
RF
OUTPUT
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14, Z15
PCB
0.193″ x 1.170″ Microstrip
0.115″ x 0.550″ Microstrip
0.250″ x 0.110″ Microstrip
0.538″ x 0.068″ Microstrip
0.957″ x 0.068″ Microstrip
0.673″ x 0.095″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz
Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
47 Ω, 100 MHz Short Ferrite Beads, Surface Mount
2743019447
Fair - Rite
C1, C2, C3, C4, C5, C6
5.6 pF Chip Capacitors
ATC600B5R6BT500XT
ATC
C7, C11
0.01 μF, 100 V Chip Capacitors
C1825C103J1RAC
Kemet
C8, C12, C15, C19
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C9, C13
22 μF, 25 V Tantalum Capacitors
T491D226M025AT
Kemet
C10, C14
47 μF, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C16, C17, C20, C21
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C18, C22
220 μF, 50 V Electrolytic Capacitors
2222 - 150 - 95102
Vishay
R1
240 Ω, 1/4 W Chip Resistor
CRC12062400FKEA
Vishay
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
3
C17
C5
B1
+
+
+
R1
C10 C9
C8*
C15
C7*
C18
C16
C3
C4
+
+
C13
C12*
MRF6S24140H
Rev. 1.0
C19
C20
+
C14
C2
CUT OUT AREA
C1
B2
C11*
C6
C21
C22
* Stacked
Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz
MRF6S24140HR3 MRF6S24140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2450 MHz
16
50
VDD = 28 V
32 V
Gps, POWER GAIN (dB)
15
40
30 V
Gps
14
30
20
13
32 V
12
ηD
28 V
11
1
10
10
ηD, DRAIN EFFICIENCY (%)
IDQ = 1200 mA
f = 2450 MHz
30 V
0
100
500
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of VDD
14.5
60
50
13.5
40
13
30
12.5
20
VDD = 28 V
IDQ = 1200 mA
f = 2450 MHz
12
ηD
10
11.5
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
Gps
14
0
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
107
15
1200 mA
1400 mA
Gps
1000 mA
13
1100 mA
1300 mA
MTTF (HOURS)
Gps, POWER GAIN (dB)
14
12
106
105
VDD = 28 V
f = 2450 MHz
11
104
10
1
10
100
300
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total IDQ
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 140 W CW, and ηD = 45%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 6. MTTF versus Junction Temperature
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
5
f = 2450 MHz
Zsource
Zo = 10 Ω
Zload
f = 2450 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 140 W CW
f
MHz
Zsource
W
Zload
W
2450
4.55 + j4.9
1.64 - j6.57
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 7. Series Equivalent Source and Load Impedance
MRF6S24140HR3 MRF6S24140HSR3
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
4
G
2X
1
Q
bbb
M
T A
B
M
M
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
3
K
2
bbb
D
T A
M
B
M
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
B
S
(LID)
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
CASE 465B - 03
ISSUE D
NI - 880
MRF6S24140HR3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF6S24140HSR3
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor
7
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2007
• Initial Release of Data Sheet
1
Apr. 2008
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
MRF6S24140HR3 MRF6S24140HSR3
8
RF Device Data
Freescale Semiconductor
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MRF6S24140HR3 MRF6S24140HSR3
Document
Number:
RF
Device
Data MRF6S24140H
Rev. 1, 4/2008
Freescale
Semiconductor
9