Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S24140H
Rev. 4, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6S24140HR3
MRF6S24140HSR3
Designed primarily for large--signal output applications at 2450 MHz. Devices
are suitable for use in industrial, medical and scientific applications.
 Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA,
Pout = 140 Watts
Power Gain — 13.2 dB
Drain Efficiency — 45%
 Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Internally Matched for Ease of Use
 Qualified Up to a Maximum of 32 VDD Operation
 Integrated ESD Protection
 In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2450 MHz, 140 W, 28 V
CW
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF6S24140HR3
CASE 465C--03
NI--880S
MRF6S24140HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
TC
150
C
TJ
225
C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82C, 140 W CW
Case Temperature 75C, 28 W CW
RJC
0.29
0.33
Unit
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2007--2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
2
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f = 2390 MHz, 2--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
15.2
17
dB
Drain Efficiency
D
23
25
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
ACPR
—
--40
--38
dBc
IRL
—
--15
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
MRF6S24140HR3 MRF6S24140HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
R1
C8
+
+
C10
C9
B1
VSUPPLY
+
C5
C7
C15
C16
C17
C18
Z14
C3
RF
INPUT
Z1
Z2
Z3
Z8
Z4
Z11
Z12
Z13
C2
Z15
C1
Z7
DUT
+
C4
C12
+
+
C14
C13
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z10
Z9
Z6
Z5
RF
OUTPUT
C6
C19
C20
C21
C22
B2
C11
0.678 x 0.068 Microstrip
0.466 x 0.068 Microstrip
0.785 x 0.200 Microstrip
0.200 x 0.530 Microstrip
0.025 x 0.530 Microstrip
0.178 x 0.050 Microstrip
0.097 x 1.170 Microstrip
Z9
Z10
Z11
Z12
Z13
Z14, Z15
PCB
0.193 x 1.170 Microstrip
0.115 x 0.550 Microstrip
0.250 x 0.110 Microstrip
0.538 x 0.068 Microstrip
0.957 x 0.068 Microstrip
0.673 x 0.095 Microstrip
Taconic RF--35, 0.030, r = 3.5
Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz
Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
47 , 100 MHz Short Ferrite Beads, Surface Mount
2743019447
Fair--Rite
C1, C2, C3, C4, C5, C6
5.6 pF Chip Capacitors
ATC600B5R6BT500XT
ATC
C7, C11
0.01 F, 100 V Chip Capacitors
C1825C103J1RAC
Kemet
C8, C12, C15, C19
2.2 F, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C9, C13
22 F, 25 V Tantalum Capacitors
T491D226M025AT
Kemet
C10, C14
47 F, 16 V Tantalum Capacitors
T491D476K016AT
Kemet
C16, C17, C20, C21
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C18, C22
220 F, 50 V Electrolytic Capacitors
2222--150--95102
Vishay
R1
240 , 1/4 W Chip Resistor
CRC12062400FKEA
Vishay
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C17
C5
B1
+
+
+
R1
C10 C9
C8*
C15
C7*
C18
C16
C3
C4
+
+
C13
C12*
MRF6S24140H
Rev. 1.0
C19
C20
+
C14
C2
CUT OUT AREA
C1
B2
C11*
C6
C21
C22
* Stacked
Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz
MRF6S24140HR3 MRF6S24140HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2450 MHz
50
IDQ = 1200 mA
f = 2450 MHz
VDD = 28 V
32 V
Gps, POWER GAIN (dB)
15
40
30 V
Gps
14
30
20
13
32 V
12
D
28 V
11
10
1
10
D, DRAIN EFFICIENCY (%)
16
30 V
100
0
500
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain and Drain Efficiency
versus CW Output Power as a Function of VDD
60
14.5
Gps
50
13.5
40
13
30
12.5
20
VDD = 32 V
IDQ = 1200 mA
f = 2450 MHz
12
D
10
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
14
0
11.5
10
1
100
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Power Gain and Drain Efficiency
versus CW Output Power
15
Gps
Gps, POWER GAIN (dB)
14
1000 mA
13
1200 mA
1400 mA
1100 mA
1300 mA
12
VDD = 28 V
f = 2450 MHz
11
10
1
10
100
300
Pout, OUTPUT POWER (WATTS) CW
Figure 5. Power Gain and Drain Efficiency versus
CW Output Power as a Function of Total IDQ
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
f = 2450 MHz
Zsource
Zo = 10 
Zload
f = 2450 MHz
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 140 W CW
f
MHz
Zsource

Zload

2450
4.55 + j4.9
1.64 -- j6.57
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 6. Series Equivalent Source and Load Impedance
MRF6S24140HR3 MRF6S24140HSR3
6
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor, Inc.
7
MRF6S24140HR3 MRF6S24140HSR3
8
RF Device Data
Freescale Semiconductor, Inc.
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF6S24140HR3 MRF6S24140HSR3
10
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2007
 Initial Release of Data Sheet
1
Apr. 2008
 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
 Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
 Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
2
Feb. 2009
3
Mar. 2010
 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 2
 Fig. 1, Test Circuit Schematic, Z--list, corrected PCB information to reflect Taconic as manufacturer, p. 3
 Fig. 4, Power Gain and Drain Efficiency versus CW Output Power, corrected 28 V to read 32 V, p. 5
 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 8
4
Feb. 2012
 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
 Fig. 6, MTTF versus Junction Temperature removed, p. 5. Refer to the device’s MTTF Calculator available
at freescale.com/RFpower. Go to Design Resources > Software and Tools.
 Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 7--8. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
 Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 9--10. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
MRF6S24140HR3 MRF6S24140HSR3
RF Device Data
Freescale Semiconductor, Inc.
11
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MRF6S24140HR3 MRF6S24140HSR3
Document Number: MRF6S24140H
Rev. 4, 2/2012
12
RF Device Data
Freescale Semiconductor, Inc.