Document Number: MMRF1308H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. Typical Performance: VDD = 50 Vdc, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) D (%) IRL (dB) Pulse (100 sec, 20% Duty Cycle) 600 Peak 230 25.0 74.6 --18 CW 600 Avg. 230 24.6 75.2 --17 Signal Type Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness 600 W Pulse Peak Power, 20% Duty Cycle, 100 sec MMRF1308HR5 MMRF1308HSR5 1.8--600 MHz, 600 W CW, 50 V BROADBAND RF POWER MOSFETs NI--1230H--4S MMRF1308HR5 Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration Qualified Up to a Maximum of 50 VDD Operation Characterized from 30 V to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation Characterized with Series Equivalent Large--Signal Impedance Parameters NI--1230S--4S MMRF1308HSR5 PARTS ARE PUSH--PULL In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel. Table 1. Maximum Ratings Rating Gate A 3 1 Drain A Gate B 4 2 Drain B Symbol Value Unit Drain--Source Voltage VDSS --0.5, +133 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Total Device Dissipation @ TC = 25C Derate above 25C PD 1667 8.33 W W/C Note: The backside of the package is the source terminal for the transistors. Operating Junction Temperature (1,2) TJ 225 C Figure 1. Pin Connections (Top View) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 68C, 600 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz Case Temperature 60C, 600 W CW, 100 mA, 230 MHz Symbol Value (2,3) ZJC RJC 0.022 0.12 Unit C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF1308HR5 MMRF1308HSR5 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Off Characteristics Symbol Min Typ Max Unit IGSS — — 1 Adc 133 — — Vdc (1) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 20 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 960 Adc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.5 3.0 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.26 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.60 — pF Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 129 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Ciss — 342 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 23.5 25.0 26.5 dB Drain Efficiency D 73.5 74.6 — % Input Return Loss IRL — --18 --12 dB 1. Each side of device measured separately. MMRF1308HR5 MMRF1308HSR5 2 RF Device Data Freescale Semiconductor, Inc. VBIAS + C10 C11 C12 C13 R1 COAX1 Z11 Z3 RF INPUT Z1 Z5 Z7 Z9 L1 Z13 Z6 C4 Z8 C5 Z10 L2 Z14 C2 Z2 Z4 C1 C3 Z12 COAX2 R2 VBIAS + C7 C6 L3 C8 C9 C22 + + + C23 C24 C25 VSUPPLY Z19 COAX3 Z17 Z15 Z21 Z23 Z25 C16 Z27 Z29 C17 Z31 DUT C14 C15 RF Z32 OUTPUT C20 C21 Z16 Z22 Z24 Z26 Z28 Z30 C18 Z18 COAX4 C19 Z20 L4 C26 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 0.192 x 0.082 Microstrip 0.175 x 0.082 Microstrip 0.170 x 0.100 Microstrip 0.116 x 0.285 Microstrip 0.116 x 0.285 Microstrip 0.108 x 0.285 Microstrip Z11*, Z12* Z13, Z14 Z15, Z16 Z17*, Z18* Z19*, Z20* Z21, Z22 + + + C27 C28 C29 VSUPPLY 0.872 x 0.058 Microstrip 0.412 x 0.726 Microstrip 0.371 x 0.507 Microstrip 0.466 x 0.363 Microstrip 1.187 x 0.154 Microstrip 0.104 x 0.507 Microstrip Z23, Z24 Z25, Z26 Z27, Z28 Z29, Z30 Z31 Z32 1.251 x 0.300 Microstrip 0.127 x 0.300 Microstrip 0.058 x 0.300 Microstrip 0.058 x 0.300 Microstrip 0.186 x 0.082 Microstrip 0.179 x 0.082 Microstrip * Line length includes microstrip bends Figure 2. MMRF1308HR5(HSR5) Test Circuit Schematic -- Pulse MMRF1308HR5 MMRF1308HSR5 RF Device Data Freescale Semiconductor, Inc. 3 C23 C10 C11 C12 C24 C25 C13 C22 COAX1 COAX3 R1 C1 L3 C2 C4 L1 C3 L2 C5 C14 C20 C18 C19 C21 L4 R2 COAX2 C16 C17 C15 COAX4 C26 C6 C7 C8 C9 C27 C28 C29 Figure 3. MMRF1308HR5(HSR5) Test Circuit Component Layout -- Pulse Table 5. MMRF1308HR5(HSR5) Test Circuit Component Designations and Values -- Pulse Part Description Part Number Manufacturer C1 12 pF Chip Capacitor ATC100B120JT500XT ATC C2, C3 27 pF Chip Capacitors ATC100B270JT500XT ATC C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson C5 33 pF Chip Capacitor ATC100B330JT500XT ATC C6, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C7, C11 0.1 F Chip Capacitors CDR33BX104AKYS AVX C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet C9, C13, C22, C26 1000 pF Chip Capacitors ATC100B102JT50XT ATC C14 36 pF Chip Capacitor ATC100B360JT500XT ATC C15 51 pF Chip Capacitor ATC100B510GT500XT ATC C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC C20 39 pF Chip Capacitor ATC100B390JT500XT ATC C21 10 pF Chip Capacitor ATC100B100JT500XT ATC C23, C24, C25, C27, C28, C29 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp Coax1, 2, 3, 4 25 Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro Coax L1, L2 5 nH Inductors A02TKLC Coilcraft L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft R1, R2 10 Chip Resistors CRCW120610R0JNEA Vishay PCB 0.030, r = 2.55 AD255A Arlon MMRF1308HR5 MMRF1308HSR5 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 64 1000 100 Pout, OUTPUT POWER (dBm) PULSED C, CAPACITANCE (pF) Ciss Coss Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 1 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 63 62 P3dB = 58.3 dBm (679 W) 61 Ideal P2dB = 58.2 dBm (664 W) 60 P1dB = 58.0 dBm (632 W) 59 Actual 58 57 31 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 33 34 35 Pin, INPUT POWER (dBm) PEAK Note: Each side of device measured separately. Figure 5. Output Power versus Input Power 0 10 20 30 50 40 32 36 37 Figure 4. Capacitance versus Drain--Source Voltage Gps 24 60 23 50 22 40 D 21 20 40 50 V 45 V 20 40 V 35 V VDD = 30 V 300 200 100 0 400 500 600 700 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power Figure 7. Power Gain versus Output Power 45 V 40 V 35 V VDD = 30 V 80 50 V 26 70 Gps, POWER GAIN (dB) D, DRAIN EFFICIENCY (%) 22 21 17 27 60 50 40 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 30 0 23 18 20 1000 100 24 19 30 90 20 25 Gps, POWER GAIN (dB) 70 25 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 26 80 D, DRAIN EFFICIENCY (%) 26 Gps, POWER GAIN (dB) 27 90 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 100 200 300 400 500 600 25 90 25_C 85_C 60 TC = --30_C 50 23 25_C 40 22 20 40 80 --30_C 70 Gps 24 21 700 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle D 85_C D, DRAIN EFFICIENCY (%) 27 30 20 1000 100 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Drain Efficiency versus Output Power Figure 9. Power Gain and Drain Efficiency versus Output Power MMRF1308HR5 MMRF1308HSR5 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 109 MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 600 W Avg., and D = 75.2%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature — CW MMRF1308HR5 MMRF1308HSR5 6 RF Device Data Freescale Semiconductor, Inc. Zsource Zo = 10 f = 230 MHz f = 230 MHz Zload VDD = 50 Vdc, IDQ = 100 mA, Pout = 600 W Peak f MHz Zsource Zload 230 1.78 + j5.45 2.75 + j5.30 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 11. Series Equivalent Source and Load Impedance MMRF1308HR5 MMRF1308HSR5 RF Device Data Freescale Semiconductor, Inc. 7 PACKAGE DIMENSIONS MMRF1308HR5 MMRF1308HSR5 8 RF Device Data Freescale Semiconductor, Inc. MMRF1308HR5 MMRF1308HSR5 RF Device Data Freescale Semiconductor, Inc. 9 MMRF1308HR5 MMRF1308HSR5 10 RF Device Data Freescale Semiconductor, Inc. MMRF1308HR5 MMRF1308HSR5 RF Device Data Freescale Semiconductor, Inc. 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 July 2014 Description Initial Release of Data Sheet MMRF1308HR5 MMRF1308HSR5 12 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. MMRF1308HR5 MMRF1308HSR5 Document Number: RF Device DataMMRF1308H Rev. 0, 7/2014Semiconductor, Freescale Inc. 13