FREESCALE MRF6VP41KHSR6

Freescale Semiconductor
‘Technical Data
Document Number: MRF6VP41KH
Rev. 0, 1/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband applications with frequencies up to
450 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP41KHR6
MRF6VP41KHSR6
10 - 450 MHz, 1000 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D - 05, STYLE 1
NI - 1230
MRF6VP41KHR6
CASE 375E - 04, STYLE 1
NI - 1230S
MRF6VP41KHSR6
PARTS ARE PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +110
Vdc
Gate - Source Voltage
VGS
- 6, +10
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
RθJC
0.03
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
μAdc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
mA
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage (4)
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain - Source On - Voltage (3)
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
—
0.28
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.3
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
147
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
506
—
pF
Off Characteristics (3)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain - Source Breakdown Voltage
(ID = 300 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics (3)
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz,
100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
19
20
22
dB
Drain Efficiency
ηD
60
64
—
%
Input Return Loss
IRL
—
- 18
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push - pull configuration.
MRF6VP41KHR6 MRF6VP41KHSR6
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
C2
C1
C3
L3
C4
L1
Z8
Z4
Z6
C26
C27
C28
+
C29
C30
Z14
COAX1
Z2
C25
Z12
Z16
VSUPPLY
+
COAX3
Z18
Z20
C22
Z22
C23
Z10
RF
RF
INPUT Z1
Z24 OUTPUT
C5
C7
Z3
C8
Z5
C9
Z7
C10 DUT
Z11
C6
Z13
C15
C16
C17
C18
Z17
Z19
Z21
Z23
C19
C24
Z9
C21
Z15
COAX2
COAX4
C20
L2
L4
B2
VBIAS
+
C11
Z1
Z2*, Z3*
Z4*, Z5*
Z6, Z7
Z8*, Z9*
Z10, Z11
Z12, Z13
C12
C13
C31
C14
0.366″ x 0.082″ Microstrip
0.170″ x 0.100″ Microstrip
0.220″ x 0.451″ Microstrip
0.117″ x 0.726″ Microstrip
0.792″ x 0.058″ Microstrip
0.316″ x 0.726″ Microstrip
0.262″ x 0.507″ Microstrip
Z14*, Z15*
Z16, Z17
Z18, Z19
Z20, Z21, Z22, Z23
Z24
PCB
C32
C33
C34
+
+
C35
C36
VSUPPLY
0.764″ x 0.150″ Microstrip
0.290″ x 0.430″ Microstrip
0.100″ x 0.430″ Microstrip
0.080″ x 0.430″ Microstrip
0.257″ x 0.215″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP41KHR6 Test Circuit Schematic
Table 5. MRF6VP41KHR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
47 Ω, 100 MHz Short Ferrite Beads
2743019447
Fair - Rite
C1, C11
47 μF, 50 V Electrolytic Capacitors
476KXM063M
Illinois
C2, C12, C28, C34
0.1 μF Chip Capacitors
CDR33BX104AKYS
Kemet
C3, C13, C27, C33
220 nF, 50 V Chip Capacitors
C1812C224K5RAC
Kemet
C4, C14
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C5, C6, C8, C15
27 pF Chip Capacitors
ATC100B270JT500XT
ATC
C7, C10
0.8 - 8.0 pF Variable Capacitors
27291SL
Johanson Components
C9
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C16
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C17
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C18
9.1 pF Chip Capacitor
ATC100B9R1CT500XT
ATC
C19
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C20, C21, C22, C23,
C25, C32
240 pF Chip Capacitors
ATC100B241JT200XT
ATC
C24
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C26, C31
2.2 μF, 100 V Chip Capacitors
2225X7R225KT3AB
ATC
C29, C30, C35, C36
330 μF, 63 V Electrolytic Capacitors
EMVY630GTR331MMH0S
Multicomp
Coax1, 2, 3. 4
25 Ω Semi Rigid Coax, 2.2″ Long
UT - 141C- 25
Micro - Coax
L1, L2
2.5 nH, 1 Turn Inductors
A01TKLC
CoilCraft
L3, L4
43 nH, 10 Turn Inductors
B10TJLC
Coilcraft
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
3
C29
C27
C1
B1
MRF6VP41KH
Rev. 1
C2 C3
C4
C25
L1
COAX1
C26
COAX3
L3
C5 C7
C23
C18 C19
C16
C10
CUT OUT AREA
C8 C9
C6
COAX2
C30
C28
C15
C17
C22
C20
C21 C24
L4
L2
COAX4
C32
C31
C35
B2 C12
C14
C33
C36
C11
C13
C34
Figure 3. MRF6VP41KHR6 Test Circuit Component Layout
MRF6VP41KHR6 MRF6VP41KHSR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
100
Ciss
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
TJ = 200°C
Coss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
10
TJ = 175°C
TJ = 150°C
10
TC = 25°C
1
1
0
10
20
30
40
50
10
100
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage
Figure 5. DC Safe Operating Area
21
80
18
Gps
60
50
17
40
ηD
16
30
15
20
14
10
13
1
63
P1dB = 60.33 dBm (1078.94 W)
62
61
Actual
60
59
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
58
57
56
0
1000 2000
100
10
Ideal
P3dB = 60.70 dBm (1174.89 W)
64
70
Pout, OUTPUT POWER (dBm)
19
200
65
ηD, DRAIN EFFICIENCY (%)
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
20
Gps, POWER GAIN (dB)
1
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
55
34
35
36
37
38
39
40
41
42
43
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 7. Pulsed Output Power versus
Input Power
23
44
22
IDQ = 6000 mA
20
3600 mA
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
22
21
1500 mA
20
750 mA
19
375 mA
18
VDD = 50 Vdc
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
150 mA
18
50 V
45 V
16
35 V
VDD = 30 V
IDQ = 150 Vdc, f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
14
17
40 V
12
10
100
1000
2000
0
200
400
600
800
1000
1200
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain versus
Output Power
1400
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
22
20
25_C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm)
21
TC = −30_C
60
85_C
55
50
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
45
40
35
20
100
VDD = 50 Vdc
IDQ = 150 mA
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
19
TC = −30_C
80
85_C
18
25_C
Gps
17
16
ηD
15
30
35
40
45
70
60
50
40
30
14
20
13
10
12
25
90
1
10
100
ηD, DRAIN EFFICIENCY (%)
65
0
1000 2000
Pin, INPUT POWER (dBm) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus
Input Power
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power
MTTF (HOURS)
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and ηD = 64%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
MRF6VP41KHR6 MRF6VP41KHSR6
6
RF Device Data
Freescale Semiconductor
Zo = 2 Ω
f = 450 MHz
f = 450 MHz
Zsource
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
W
Zload
W
450
0.86 + j1.06
1.58 + j1.22
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
MRF6VP41KHR6 MRF6VP41KHSR6
8
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
9
MRF6VP41KHR6 MRF6VP41KHSR6
10
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Jan. 2008
Description
• Initial Release of Data Sheet
MRF6VP41KHR6 MRF6VP41KHSR6
12
RF Device Data
Freescale Semiconductor
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MRF6VP41KHR6 MRF6VP41KHSR6
Document
Number:
RF
Device
Data MRF6VP41KH
Rev. 0, 1/2008
Freescale
Semiconductor
13