SPP04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS(on) 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1 • Improved transconductance 23 P-TO220-3-1 Type Package Ordering Code SPP04N60S5 PG-TO220 Q67040-S4200 Marking 04N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 4.5 TC = 100 °C 2.8 9 Pulsed drain current, tp limited by Tjmax I D puls Avalanche energy, single pulse EAS 130 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.4 mJ I D = 3.4 A, VDD = 50 V I D = 4.5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 4.5 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 50 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.6 Page 1 2007-08-30 SPP04N60S5 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 20 V/ns Values Unit V DS = 480 V, ID = 4.5 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 2.5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=4.5A Values Unit min. typ. max. 600 - - - 700 - 3.5 4.5 5.5 V breakdown voltage Gate threshold voltage VGS(th) ID=200µΑ, VGS=V DS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.6 RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=2.8A, Tj=25°C - 0.85 0.95 Tj=150°C - 2.3 - f=1MHz, open Drain - 20 - Page 2 nA 2007-08-30 SPP04N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 2.5 - S pF Characteristics Transconductance g fs V DS≥2*I D*RDS(on)max, ID=2.8A Input capacitance Ciss V GS=0V, V DS=25V, - 580 - Output capacitance Coss f=1MHz - 220 - Reverse transfer capacitance Crss - 7 - - 20 - - 35 - - 55 - - 30 - Effective output capacitance, 4) Co(er) energy related V GS=0V, V DS=0V to 480V Effective output capacitance, 5) Co(tr) time related Turn-on delay time t d(on) pF V DD=350V, V GS=0/10V, ns ID=4.5A, RG=18Ω Rise time tr V DD=350V, V GS=0/10V, ID=4.5A, RG=18 Turn-off delay time t d(off) V DD=350V, V GS=0/10V, - 60 90 Fall time tf ID=4.5A, RG=18Ω - 15 22.5 Gate to source charge Qgs VDD=350V, ID=4.5A - 4.5 - Gate to drain charge Qgd - 11 - Gate charge total Qg - 17.6 22.9 - 8 - Gate Charge Characteristics VDD=350V, ID=4.5A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=350V, ID=4.5A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.6 Page 3 2007-08-30 SPP04N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 4.5 - - 9 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=350V, IF =IS , - 900 1530 ns Reverse recovery charge Qrr diF/dt=100A/µs - 3.2 - µC Typical Transient Thermal Characteristics Value Symbol Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.039 R th2 Cth1 0.00007347 0.074 Cth2 0.0002831 R th3 0.132 Cth3 0.0004062 R th4 0.555 Cth4 0.001215 R th5 0.529 Cth5 0.00276 R th6 0.169 Cth6 0.029 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.6 Page 4 2007-08-30 SPP04N60S5 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 55 10 1 SPP04N60S5 W A 45 10 0 35 ID Ptot 40 30 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 25 20 10 -1 15 10 5 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 1 10 14 K/W A 20V 12V 10V 10 9.5V 8 9V ID ZthJC 10 0 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 8.5V 6 8V 4 7.5V 7V 2 6.5V 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp Rev. 2.6 0 0 5 10 15 V 25 VDS Page 5 2007-08-30 3 SPP04N60S5 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 8 5 20V 12V 10V 9.5V RDS(on) 9V 8.5V ID A mΩ 8V 4 3.5 4 3 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 7.5V 2.5 7V 2 2 6.5V 6V 0 0 5 10 1.5 V 15 1 0 25 1 2 3 4 5 6 7 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 2.8 A, VGS = 10 V parameter: tp = 10 µs 5.5 SPP04N60S5 8.5 16 Ω A 12 4 3.5 ID RDS(on) 4.5 10 3 8 2.5 6 2 1.5 4 98% 1 typ 2 0.5 0 -60 -20 20 60 100 °C 180 Tj Rev. 2.6 Page 6 0 0 2 4 6 8 10 12 14 16 V 20 VGS 2007-08-30 SPP04N60S5 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 4.5 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPP04N60S5 V SPP04N60S5 A 0.2 VDS max 10 0 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 0 0 4 8 12 16 20 nC 10 -2 0 26 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 3.4 A, V DD = 50 V 5 160 A mJ 4 Tj(START) =25°C 120 EAS IAR 3.5 3 2.5 2 100 80 60 Tj(START) =125°C 1.5 40 1 20 0.5 0 -3 10 Rev. 2.6 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 7 0 20 40 60 80 100 120 °C 160 Tj 2007-08-30 SPP04N60S5 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.4mJ 720 SPP04N60S5 200 W 680 150 PAR V(BR)DSS V 660 125 640 100 620 75 600 50 580 25 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 3.5 pF µJ 10 3 Ciss C Eoss 2.5 2 10 2 1.5 Coss 1 10 1 0.5 Crss 10 0 0 100 200 300 400 V 600 VDS Rev. 2.6 0 0 100 200 300 400 V 600 VDS Page 8 2007-08-30 6 SPP04N60S5 Definition of diodes switching characteristics Rev. 2.6 Page 9 2007-08-30 SPP04N60S5 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.6 Page 10 2007-08-30 SPP04N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Page 11 2007-08-30