VFT2045CBP Datasheet

VFT2045CBP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 5.0 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• TJ 200 °C max. in solar bypass mode application
1
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
VFT2045CBP
PIN 1
TYPICAL APPLICATIONS
PIN 2
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
2 x 10 A
VRRM
45 V
IFSM
160 A
VF at IF = 10 A
0.41 V
TOP max. (AC mode)
150 °C
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
TJ max. (DC forward current)
200 °C
Package
ITO-220AB
Diode variation
Dual Common Cathode
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
SYMBOL
VFT2045CBP
UNIT
VRRM
45
V
IF(AV) (1)
20
A
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
160
A
Isolation voltage from termal to heatsink, t = 1 min
VAC
1500
V
TOP, TSTG
-40 to +150
°C
TJ (2)
 200
°C
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t  1 h
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 29-Oct-13
Document Number: 89368
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT2045CBP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 10 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
TA = 25 °C
VR = 45 V
Reverse current per diode
SYMBOL
TYP.
MAX.
0.44
-
0.49
0.58
0.33
-
V
0.41
0.52
-
2000
μA
10
30
mA
IR (2)
TA = 125 °C
UNIT
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
VFT2045CBP
RJC
per device
UNIT
6.0
°C/W
4.5
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
VFT2045CBP-M3/4W
1.76
4W
50/tube
Tube


RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
6
D = 0.8
Average Power Loss (W)
DC Forward Rectified Current (A)
24
20
16
12
8
DC Forward Current at
Thermal Equilibrium
4
D = 0.5
D = 0.3
5
4
D = 0.2
3
D = 1.0
D = 0.1
T
2
1
D = tp/T
tp
8
10
0
0
100
120
140
160
180
200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
0
2
4
6
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 29-Oct-13
Document Number: 89368
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT2045CBP
www.vishay.com
Vishay General Semiconductor
10 000
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.1
0.8
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
40
60
80
Junction to Case
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 29-Oct-13
Document Number: 89368
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000