JFET - General Purpose

J110
JFET − General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for general purpose audio amplifiers, analog
switches and choppers.
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Features
•
•
•
•
•
•
•
•
1 DRAIN
N−Channel for Higher Gain
Drain and Source Interchangeable
High AC Input Impedance
High DC Input Resistance
Low RDS(on) < 18 W
Fast Switching td(on) + tr = 8.0 ns (Typ)
Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ)
Pb−Free Packages are Available*
3
GATE
2 SOURCE
MARKING
DIAGRAM
MAXIMUM RATINGS
Symbol
Value
Unit
Gate−Source Voltage
Rating
VGS
−25
Vdc
Drain −Gate Voltage
VDG
−25
Vdc
Gate Current
IG
10
mAdc
Total Device Dissipation
PD
310
2.82
mW
mW/°C
@ TA = 25°C
Derate above 25°C
Operating Junction Temp Range
TJ
135
°C
Storage Temperature Range
Tstg
−65 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1
2
CASE 29
TO−92 (TO−226)
STYLE 5
J110
AYWW G
G
3
J110 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
J110
J110G
J110RLRA
J110RLRAG
Package
Shipping †
TO−92
1000 Units / Box
TO−92
(Pb−Free)
1000 Units / Box
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 6
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
J110/D
J110
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)GSS
−25
−
Vdc
IGSS
−
−
−3.0
−200
nAdc
(VDS = 5.0 Vdc, ID = 1.0 mAdc)
VGS(off)
−0.5
−4.0
Vdc
(VDS v 0.1 V, VGS = 0 V)
RDS(on)
−
18
W
IDSS
10
−
mAdc
Cdg(on)
+
Csg(on)
−
85
pF
Characteristic
STATIC CHARACTERISTICS
(IG = −1.0 mAdc)
Gate −Source Breakdown Voltage
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0)
(VGS = −15 Vdc, VDS = 0, TA = 100°C)
Gate−Source Cutoff Voltage
Drain Source On−Resistance
Zero−Gate−Voltage Drain Current (Note 1)
(VDS = 15 Vdc)
DYNAMIC CHARACTERISTICS
Drain−Gate and Source−Gate On−Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain−Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
Cdg(off)
−
15
pF
Source−Gate Off−Capacitance
(VGS = −10 Vdc, f = 1.0 MHz)
Csg(off)
−
15
pF
1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
Crss, FEEDBACK CAPACITANCE (pF)
Ciss, INPUT CAPACITANCE (pF)
100
80
60
VDS = 0 V
5V
40
10 V
20
0
0
−4
−8
−12
−16
100
80
60
40
VDS = 0 V
20
5V
10 V
0
−20
0
−4
−8
−12
−16
VGS, GATE−SOURCE VOLTAGE (VOLTS)
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance
versus Gate−Source Voltage
Figure 2. Common Source Reverse Feedback
Capacitance versus Gate−Source Voltage
100
16
VGS = 0 V
ID, DRAIN CURRENT (mA)
90
RDS(on), DRAIN−SOURCE
ON−RESISTANCE (OHMS)
−20
12
RDS(on): VDS ≤ 0.1 V
RDS(on): VGS = 0 V
8
VGS(off): VDS = 5 V
VGS(off): ID = 1.0 mA
4
−0.25 V
80
70
60
−0.5 V
50
40
−0.75 V
30
−1 V
20
−1.25 V
10
0
0
0
−1
−2
−3
−4
−5
−6
−7
−8
0
2
4
6
8
10
12
14
16
18
VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Gate−Source
Cutoff Voltage
Figure 4. Output Characteristic
VGS(off) = −2.0 V
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2
20
J110
200
300
VGS = 0 V
ID, DRAIN CURRENT (mA)
140
120
−1 V
100
80
−1.5 V
60
40
−2 V
20
−2.5 V
0
0
2
4
6
10
8
12
14
16
VGS = 0 V
270
−0.5 V
160
18
240
−0.5 V
210
−1 V
180
−1.5 V
150
120
−2 V
90
60
−2.5 V
30
−3 V
0
0
20
4
2
6
8
10
12
14
16
18
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristic
VGS(off) = −3.0 V
Figure 6. Output Characteristic
VGS(off) = −4.0 V
400
VGS = 0 V
360
ID, DRAIN CURRENT (mA)
ID, DRAIN CURRENT (mA)
180
−0.5 V
320
−1 V
280
240
−1.5 V
200
−2 V
160
−2.5 V
120
−3 V
80
−3.5 V
40
0
0
2
4
6
8
10
12
14
16
18
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 7. Output Characteristic
VGS(off) = −5.0 V
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3
20
20
J110
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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4
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J110/D