Ordering number : ENA0842A TF252TH N-Channel JFET http://onsemi.com 20V, 140 to 350μA, 1.4mS, VTFP Features • • • • • • • High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristics Excellent transient characteristics Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Conditions Ratings Unit VGDO IG Gate Current Drain Current ID PD Allowable Power Dissipation Junction Temperature Tj Storage Temperature Tstg --20 V 10 mA 1 mA 100 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7031A-001 • Package : VTFP • JEITA, JEDEC : SC-106A • Minimum Packing Quantity : 8,000 pcs./reel 1.4 0.1 Packing Type: TL Marking 3 1 2 RANK D LOT No. LOT No. 0.8 0 to 0.02 0.2 1.2 0.2 0.25 TF252TH-4-TL-H TF252TH-5-TL-H TL 0.2 0.45 0.34 Electrical Connection 0.07 0.07 1 1 2 3 1 : Drain 2 : Source 3 : Gate 3 VTFP 2 Semiconductor Components Industries, LLC, 2013 August, 2013 53012 TKIM/70407GB TI IM TC-00000796 No. A0842-1/7 TF252TH Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Conditions Ratings min V(BR)GDO VGS(off) IG=--100μA VDS=2V, ID=1μA --0.1 VDS=2V, VGS=0V 140* Forward Transfer Admittance IDSS | yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss typ max --20 VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz 0.8 Unit V --0.4 --1.0 V 350* μA 1.4 mS 3.1 pF 0.95 pF [Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] GV ΔGVV VIN=10mV, f=1kHz Reduced Voltage Characteristic Voltage Gain Frequency Characteristic ΔGvf f=1kHz to 110Hz Total Harmonic Distortion THD Output Noise Voltage VNO VIN=30mV, f=1kHz VIN=0V, A curve 1.0 VIN=10mV, f=1kHz, VCC=2.0V → 1.5V --0.6 dB --2.0 dB --1.0 dB --102 dB 0.65 --106 % * : The TF252TH is classified by IDSS as follows : (unit : μA) Rank IDSS 4 140 to 240 5 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2kΩ VCC=2V VCC=1.5V 5pF 33μF + VTVM V THD OSC Ordering Information Package Shipping TF252TH-4-TL-H Device VTFP 8,000pcs./reel TF252TH-5-TL-H VTFP 8,000pcs./reel memo Pb Free and Halogen Free No. A0842-2/7 TF252TH ID -- VDS 300 ID -- VDS 350 V V GS=0V 200 --0.05V 150 --0.10V 100 --0.15V --0.25V 250 200 --0.1V 150 100 --0.2V --0.20V --0.30V 50 V GS=0 300 Drain Current, ID -- μA Drain Current, ID -- μA 250 50 --0.4V --0.3V 0 0 0 0.5 1.0 1.5 2.0 Drain-to-Source Voltage, VDS -- V 0 ID -- VGS 400 1 IT12440 4 5 Drain-to-Source Voltage, VDS -- V 2 3 IT12441 ID -- VGS 400 VDS=2V 300 300 50 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V --0.5 --0.4 --0.3 --0.2 °C 25 --0.1 Gate-to-Source Voltage, VGS -- V VDS=2V ID=1μA Cutoff Voltage, VGS(off) -- V --0.55 1.5 1.4 1.3 1.2 1.1 0 IT12443 VGS(off) -- IDSS --0.60 VDS=2V VGS=0V f=1kHz 1.6 0 --0.6 0 IT12442 | yfs | -- IDSS 1.7 Forward Transfer Admittance, | yfs | -- mS 100 50 0 --0.6 --0.50 --0.45 --0.40 --0.35 --0.30 --0.25 1.0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA --0.20 100 400 150 Reverse Transfer Capacitance, Crss -- pF 7 5 3 2 250 300 350 400 IT12445 Crss -- VDS 3 VGS=0V f=1MHz 200 Zero-Gate Voltage Drain Current, IDSS -- μA IT12444 Ciss -- VDS 10 Input Capacitance, Ciss -- pF 150 5° C 100 200 --2 15 25 0μ A A 150 0μ S =3 50 200 250 75 °C μA 250 Ta = Drain Current, ID -- μA 350 ID S Drain Current, ID -- μA VDS=2V 350 VGS=0V f=1MHz 2 1.0 7 5 3 1.0 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT12446 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT12447 No. A0842-3/7 TF252TH GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.6 1.4 Voltage Gain, GV -- dB Reduced Voltage Characteristic, ΔGVV -- dB GV -- IDSS 1.8 1.2 1.0 0.8 0.6 0.4 0.2 0 --0.2 --0.4 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA 3 2 350μA 1.0 7 5 3 2 0.1 0 50 100 150 Input Voltage, VIN -- mV Allowable Power Dissipation, PD -- mW 200 IT12450 PD -- Ta 120 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA Total Harmonic Distortion, THD -- % 7 5 --0.4 400 IT12449 THD -- IDSS 1.4 THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF 50μA IDSS : VDS=2V I DSS=1 A 250μ 10 ΔGVV : VCC=2V→1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --0.3 IT12448 THD -- VIN 2 Total Harmonic Distortion, THD -- % 400 ΔGVV -- IDSS --0.2 THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.2 1.0 0.8 0.6 0.4 0.2 0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- μA 400 IT12451 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12453 No. A0842-4/7 TF252TH Taping Specification TF252TH-4-TL-H, TF252TH-5-TL-H No. A0842-5/7 TF252TH Outline Drawing TF252TH-4-TL-H, TF252TH-5-TL-H Land Pattern Example Mass (g) Unit 0.0012 mm * For reference Unit: mm 1.1 0.4 0.5 0.45 0.45 0.45 0.45 No. A0842-6/7 TF252TH ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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