SANYO EC3A04B_09

EC3A04B
Ordering number : ENA0509B
SANYO Semiconductors
DATA SHEET
N-Channel Junction Silicon FET
EC3A04B
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
Applicatins
•
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.
Features
•
•
•
•
Small IGSS.
Small Ciss.
Ultraminiature package facilitates miniaturization in end products.
Halogen free compliance (UL94HB).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Symbol
Conditions
Ratings
VDSX
VGDS
Unit
30
V
--30
V
IG
ID
10
mA
10
mA
100
mW
Junction Temperature
PD
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Gate Current
Drain Current
Allowable Power Dissipation
Electrical Characteristics at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Symbol
Conditions
V(BR)GDS
IGSS
IG=--10μA, VDS=0V
Gate-to-Source Leakage Current
Cutoff Voltage
VGS(off)
VDS=10V, ID=1μA
Ratings
min
typ
max
--30
V
VGS=--20V, VDS=0V
Marking : KC
--0.18
Unit
--0.65
--1.0
nA
--2.2
V
Continued on next page.
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
21209 MS IM TC-00001840 / 41608 TI IM TC-00001316 / 70407GB TI IM TC-00000742 No. A0509-1/4
EC3A04B
Continued from preceding page.
Parameter
Symbol
Drain Current
Ratings
Conditions
min
Unit
max
Input Capacitance
IDSS
⏐yfs⏐
Ciss
pF
Crss
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
4
Reverse Transfer Capacitance
1.1
pF
Static Drain-to-Source On-State Resistance
RDS(on)
VDS=10mV, VGS=0V
200
Ω
Forward Transfer Admittance
VDS=10V, VGS=0V
VDS=10V, VGS=0V, f=1kHz
typ
0.6*
3.0
3.0*
5.0
mA
mS
* : The EC3A04B is classified by IDSS as follows : (unit : mA).
Rank
2
3
IDSS
0.6 to 1.5
1.2 to 3.0
Package Dimensions
unit : mm (typ)
7039A-004
0.6
Polarity discriminating mark
3
1.0
2
0.025
0.5
1
0.5
0.25
0.65
1
2
3
0.15
0.35
1 : Gate
2 : Source
3 : Drain
SANYO : ECSP1006-3
Type No. Indication (Top view)
Electrical Connection (Top view)
Polarity mark (Top)
KC
Polarity mark (Top)
Source
Gate
Gate
Drain
Source
*Electrodes : Bottom
Drain
No. A0509-2/4
EC3A04B
ID -- VDS
2.0
VGS=0V
1.5
--0.1V
Drain Current, ID -- mA
Drain Current, ID -- mA
2.5
--0.2V
1.0
--0.3V
--0.4V
0.5
0
0
1
2
ID -- VDS
3.0
3
VGS=0V
2.0
--0.1V
1.5
--0.2V
1.0
--0.3V
--0.4V
0.5
4
Drain-to-Source Voltage, VDS -- V
2.5
0
0
5
5
ID -- VGS
10
15
25
30
IT11451
ID -- VGS
5
VDS=10V
20
Drain-to-Source Voltage, VDS -- V
IT11450
5
VDS=10V
4
2
mA
.0
=3
S
S
ID
mA
2.0
--2
5°
C
2
1
1
C
75°
mA
1.0
25
0
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, ⏐yfs⏐ -- mS
5
3
1.0
2
3
Drain Current, IDSS -- mA
7
5
3
2
A
3.0m
7
5
3
mA
=2.0
I DSS
A
1.0m
2
1.0
7
5
3
2
3
5
7
1.0
2
3
Drain Current, ID -- mA
5
7
1.0
2
Drain Current, IDSS -- mA
3
5
IT11455
5
IT11454
IGDL -- VDS
IGDL
3
10n
D
S
G
3
ID
DC
DC
1n
3
100p
3
10p
3
1p
5
1.0
ITR00636
10
100n
10
0
0
--0.2
VDS=10V
f=1kHz
IT11453
VDS=10V
VGS=0V
f=1kHz
--0.4
⏐yfs⏐ -- ID
2
0.1
5
⏐yfs⏐ -- IDSS
2
--0.6
°C
Gate-to-Source Voltage, VGS -- V
Gate-to-Drain Leak Current, IGDL -- A
Cutoff Voltage, VGS(off) -- V
7
7
--0.8
2
--1.0
2
5
--1.0
IT11452
VDS=10V
ID=1.0μA
Forward Transfer Admittance, ⏐yfs⏐ -- mS
--1.2
0
VGS(off) -- IDSS
2
3
Ta
=
3
Drain Current, ID -- mA
4
ID=1mA
0
5
10
15
20
Drain-to-Source Voltage, VDS -- V
25
ITR00640
No. A0509-3/4
Drain Current, ID -- mA
3.0
EC3A04B
Ciss -- VDS
10
Crss -- VDS
5
VGS=0V
f=1MHz
VGS=0V
f=1MHz
Output Capacitance, Crss -- pF
Input Capacitance, Ciss -- pF
7
5
3
2
1.0
2
1.0
7
5
5
7
2
1.0
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
3
5
IT11456
PD -- Ta
120
Allowable Power Dissipation, PD -- mW
3
5
7
1.0
2
3
5
7
10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT11457
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR00646
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of February, 2009. Specifications and information herein are subject
to change without notice.
PS No. A0509-4/4