MBRS130T3G, NRVBS130T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, TJ = 25°C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 30 VOLTS SMB CASE 403A MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (TL = 115°C) IF(AV) 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A TJ −65 to +125 °C Operating Junction Temperature AYWW B13G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS130T3G SMB (Pb−Free) 2500 / Tape & Reel NRVBS130T3G SMB (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, Junction−to−Lead (TL = 25°C) RqJL 12 °C/W © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 8 1 Publication Order Number: MBRS130T3/D MBRS130T3G, NRVBS130T3G ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) VF 0.6 V Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR mA 1.0 10 1 0.7 0.5 TC = 100°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 TC = 25°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 0.9 1.1 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 0.01 TJ = 125°C 100°C 75°C 25°C 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 200 180 NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF C, CAPACITANCE (pF) 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Capacitance 10 RATED VOLTAGE APPLIED RqJC = 12°C/W TJ = 125°C 9 8 7 6 5 4 DC 3 SQUARE WAVE 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (°C) 110 120 130 5 DC SQUARE WAVE TJ = 125°C 4 π 5 3 CAPACITANCE LOAD 2 IPK IAV 10 = 20 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating (Case) Figure 5. Power Dissipation http://onsemi.com 2 5 MBRS130T3G, NRVBS130T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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