NTD5802N D

NTD5802N, NVD5802N
Power MOSFET
40 V, Single N−Channel, 101 A DPAK
Features
•
•
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
MSL 1/260°C
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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RDS(on)
ID
4.4 mW @ 10 V
101 A
7.8 mW @ 5.0 V
50 A
V(BR)DSS
40 V
D
Applications
• CPU Power Delivery
• DC−DC Converters
• Motor Driver
N−Channel
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
4
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
101
A
Continuous Drain Current (RqJC) (Note 1)
Power Dissipation
(RqJC) (Note 1)
Continuous Drain Current (RqJA) (Note 1)
TC = 25°C
TC = 85°C
Steady
State
TC = 25°C
PD
93.75
W
TA = 25°C
ID
16.4
A
PD
2.5
W
TA = 25°C
IDM
300
A
TA = 25°C
IDmaxPkg
45
A
TJ, Tstg
−55 to
175
°C
IS
50
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
EAS
240
mJ
TL
260
°C
tp=10ms
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
12.7
TA = 25°C
Pulsed Drain Current
3
78
TA = 85°C
Power Dissipation
(RqJA) (Note 1)
1 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
4
Drain
AYWW
58
02NG
Parameter
2
1 Drain 3
Gate Source
A
Y
WW
5802N
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 7
1
Publication Order Number:
NTD5802N/D
NTD5802N, NVD5802N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
1.6
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
60
Junction−to−Ambient − Steady State (Note 2)
RqJA
105
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
40
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
50
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
1.5
−7.4
mV/°C
VGS = 10 V, ID = 50 A
3.6
4.4
mW
VGS = 5.0 V, ID = 50 A
6.5
7.8
VDS = 15 V, ID = 15 A
16.8
S
5300
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
850
550
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
580
Crss
400
Total Gate Charge
QG(TOT)
75
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
15
td(on)
14
tr
52
VGS = 10 V, VDS = 15 V,
ID = 50 A
pF
5025
100
nC
6.0
18
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.0 W
tf
ns
39
8.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD5802N, NVD5802N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.9
1.2
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.8
1.0
tRR
ta
tb
25
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 50 A
QRR
ns
15
10
15
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD5802N, NVD5802N
TYPICAL PERFORMANCE CHARACTERISTICS
200
200
10 V
ID, DRAIN CURRENT (A)
160
VDS ≥ 10 V
VGS = 5 V
7V
140
ID, DRAIN CURRENT (A)
180
6V
TJ = 25°C
4.5 V
120
100
4.2 V
80
60
4V
40
100
TJ = 25°C
50
TJ = 100°C
3.8 V
3.6 V
20
0
150
0
1
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = −55°C
0
6
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.010
VGS = 10 V
0.008
TJ = 150°C
0.006
TJ = 25°C
0.004
TJ = −55°C
0.002
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
10
30
50
70
90
110 130
150
170 190
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
TJ = 25°C
VGS = 5 V
VGS = 10 V
30
50
70
90
110
130
150
170
190
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 0 V
ID = 50 A
VGS = 10 V
IDSS, LEAKAGE (nA)
1.5
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
Figure 3. On−Resistance vs. Drain Current
1.7
1.6
6
1.4
1.3
1.2
1.1
1
TJ = 150°C
10000
1000
TJ = 100°C
0.9
0.8
0.7
−50
100
−25
0
25
50
75
100
125
150
175
2
6
10
14
18
22
26
30
34
38
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTD5802N, NVD5802N
VGS = 0 V
TJ = 25°C
7000
5000
4000
3000
2000
Coss
1000
Crss
10 5
0
5
10 15 20 25 30 35
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
ID = 50 A
TJ = 25°C
12
6000
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Ciss
C, CAPACITANCE (pF)
30
15
8000
40
9
18
VGS
VDS
12
6
QDS
QGS
6
3
0
80
0
0
20
40
60
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
60
VDD = 20 V
ID = 50 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
tr
100
tf
td(on)
10
1
VGS = 0 V
TJ = 25°C
50
40
30
20
10
0
1
10
100
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
t, TIME (ns)
24
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CHARACTERISTICS
100
10 ms
100 ms
10
1 ms
VGS = 10 V
Single Pulse
1 TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
0.1
10 ms
dc
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
100
1.4
NTD5802N, NVD5802N
r(t), Effective Transient Thermal Resistance
(°C/W)
TYPICAL PERFORMANCE CHARACTERISTICS
10
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD5802NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5802NT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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6
NTD5802N, NVD5802N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
A
E
C
A
b3
B
c2
4
L3
D
1
2
Z
Z
H
DETAIL A
3
L4
NOTE 7
b2
e
b
TOP VIEW
c
SIDE VIEW
0.005 (0.13)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
BOTTOM VIEW
ALTERNATE
CONSTRUCTION
C
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
SEATING
PLANE
A1
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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For additional information, please contact your local
Sales Representative
NTD5802N/D