NTTFS4928N D

NTTFS4928N
Power MOSFET
30 V, 37 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•
•
•
•
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V(BR)DSS
RDS(on) MAX
ID MAX
9.0 mW @ 10 V
30 V
37 A
13.5 mW @ 4.5 V
DC−DC Converters
Power Load Switch
Notebook Battery Management
Motor Control
N−Channel MOSFET
D (5−8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
11.8
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.12
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
15.9
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
TA = 85°C
11.5
TA = 25°C
PD
3.86
W
TA = 25°C
ID
7.3
A
TA = 85°C
5.2
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.81
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
37
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
20.8
W
TA = 25°C, tp = 10 ms
IDM
160
A
TJ,
Tstg
−55 to
+150
°C
IS
20
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 20 Apk, L = 0.1 mH, RG = 25 W)
EAS
20
mJ
TL
260
°C
Pulsed Drain Current
S (1,2,3)
8.5
TA = 85°C
Steady
State
G (4)
TC = 85°C
27
MARKING DIAGRAM
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4928
A
Y
WW
G
4928
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Device
Package
Shipping†
NTTFS4928NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
NTTFS4928NTWG
WDFN8
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 2
1
Publication Order Number:
NTTFS4928N/D
NTTFS4928N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
6
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
59.1
Junction−to−Ambient – Steady State (Note 4)
RqJA
154.5
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
32.4
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
24
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
gFS
1.6
3.7
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
ID = 20 A
5.4
ID = 10 A
5.3
ID = 20 A
8.9
ID = 10 A
8.5
VDS = 1.5 V, ID = 15 A
mV/°C
9.0
mW
13.5
40
S
913
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
108
Total Gate Charge
QG(TOT)
8.0
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
366
nC
1.6
3.1
3.1
VGS = 10 V, VDS = 15 V, ID = 20 A
16
nC
9.2
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
25.5
14
4.4
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4928N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
6.5
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
21
18
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.76
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
21.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
1.1
V
ns
10.5
10.9
QRR
8.4
nC
Source Inductance
LS
0.38
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.054
1.3
0.9
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
W
NTTFS4928N
TYPICAL CHARACTERISTICS
4.5 V
TJ = 25°C
ID, DRAIN CURRENT (A)
80
4.0 V
60
3.5 V
50
40
3.0 V
30
20
VGS = 2.5 V
0
1
2
3
4
30
20
1
2
3
4
5
0.011
0.010
0.009
0.008
0.007
0.006
4
5
6
7
8
9
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.012
0.019
T = 25°C
0.017
0.015
0.013
VGS = 4.5 V
0.011
0.009
0.007
VGS = 10 V
0.005
0.003
10
20
30
50
40
60
70
80
90 100
VGS (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.7
ID = 20 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
50
40
Figure 1. On−Region Characteristics
0.013
1.5
TJ = 125°C
VDS = 10 V
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 20 A
1.6
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.014
3
80
70
10
0
5
0.015
0.005
0.004
TJ = −55°C
90
70
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
100
10 V
90
ID, DRAIN CURRENT (A)
100
1.4
1.3
1.2
1.1
1.0
0.9
TJ = 125°C
1,000
100
TJ = 85°C
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
10
VGS = 0 V
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4928N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
Ciss
1000
VGS, GATE−TO−SOURCE VOLTAGE (V)
1200
800
600
Coss
400
Crss
200
0
0
5
10
15
20
25
30
7
6
5
Qgd
Qgs
4
TJ = 25°C
3
VGS = 10 V
VDD = 15 V
ID = 20 A
2
1
0
0
2
4
6
8
10
12
14
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS = 10 V
VDD = 15 V
ID = 15 A
IS, SOURCE CURRENT (A)
t, TIME (ns)
8
Qg, TOTAL GATE CHARGE (nC)
td(off)
tf
tr
td(on)
10
1
10
16
VGS = 0 V
25
TJ = 25°C
20
15
10
5
0
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0 V < VGS < 20 V
Single Pulse
TC = 25°C
10 ms
100 ms
10
1 ms
10 ms
1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
QT
9
30
100
100
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
11
100
22
ID = 20 A
20
18
16
14
12
10
8
6
4
2
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
1.0
15
NTTFS4928N
TYPICAL CHARACTERISTICS
100
D = 0.5
r(t)
(°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 13. Thermal Response
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6
1
10
100
1000
NTTFS4928N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
L
C
6X
0.10 C
DETAIL A
SEATING
PLANE
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
K
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTTFS4928N/D