NTSV20H120ECT D

NTSV20H120ECT
Low Leakage Trench-based
Schottky Rectifier
Exceptionally Low Leakage
www.onsemi.com
Features
• Fine Lithography Trench−based Schottky Technology for Low
•
•
•
•
•
•
Forward Voltage and Very Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONNECTIONS
1
2, 4
3
4
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
1
2
TO−220AB
CASE 221A
STYLE 6
3
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
AY WW
TSV20H12EG
AKA
TSV20H12EG = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
AKA
= Polarity Designator
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 1
1
Publication Order Number:
NTSV20H120ECT/D
NTSV20H120ECT
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 124°C)
(Rated VR, TC = 139°C)
Per device
Per diode
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 122°C)
(Rated VR, Square Wave, 20 kHz, TC = 137°C)
Per device
Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Value
Unit
VRRM
VRWM
VR
120
V
IF(AV)
A
20
10
IFRM
A
40
20
IFSM
125
A
Operating Junction Temperature
TJ
−40 to +175
°C
Storage Temperature
Tstg
−40 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Typical Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
1.7
50
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
IR
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Typ
Max
0.692
0.89
−
1.0
0.564
0.652
−
0.71
0.89
1.5
−
−
mA
mA
2.0
2.4
25
12
mA
mA
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSV20H120ECTG
Package
Shipping
TO−220AB
(Pb−Free)
50 Units / Rail
www.onsemi.com
2
NTSV20H120ECT
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
10
TA = 125°C
1
TA = 25°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
TA = −40°C
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
10
TA = 125°C
1
TA = 25°C
0.1
1.6
TA = −40°C
0
0.8
0.6
1.0
1.2
1.4
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.6
1.E+00
1.E−01
1.E−02
TA = 150°C
1.E−02
TA = 150°C
1.E−03
TA = 125°C
1.E−03
TA = 125°C
1.E−04
1.E−04
1.E−05
TA = 25°C
1.E−05
TA = 25°C
1.E−06
0
10
20 30
40 50
60
1.E−06
70 80
1.E−07
90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
0
10
20
30
40 50
60 70
80
90 100 110 120
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
25
RqJC = 1.7°C/W
TJ = 25°C
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−01
1000
100
10
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E+00
1.E−07
TA = 150°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
0.1
1
10
20
15
Square Wave
10
5
0
100
dc
40 50
60
70
80
90 100 110 120 130 140 150
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Leg
www.onsemi.com
3
NTSV20H120ECT
40
30
RqJC = 1.7°C/W
35
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
dc
30
25
Square Wave
20
15
10
5
0
40 50
60
70
80
90 100 110 120 130 140 150
IPK/IAV = 20
25
IPK/IAV = 10
TJ = 150°C
20
IPK/IAV = 5
15
10
Square Wave
5
0
dc
0
1
2
3
6
5
4
7
8
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating, Device
Figure 8. Forward Power Dissipation
9
R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W)
10
1 50%
20%
10%
0.1
0.01
5%
P(pk)
2%
t1
1%
DUTY CYCLE, D = t1/t2
t2
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response
www.onsemi.com
4
10
100
1000
NTSV20H120ECT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTSV20H120ECT/D