ENA2313 D

Ordering number : ENA2313A
EMH2417R
N-Channel Power MOSFET
12V, 11A, 10mΩ, Dual EMH8 Common Drain
http://onsemi.com
Features
 Low On-resistance
 2.5V drive
 Common-drain type
 Protection diode in
 Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Value
Unit
Drain to Source Voltage
VDSS
12
Gate to Source Voltage
VGSS
12
V
V
Drain Current (DC)
ID
11
A
Drain Current (Pulse)
IDP
PW10s, duty cycle1%
40
A
Power Dissipation
PD
When mounted on ceramic substrate(900mm20.8mm) 1unit
1.3
W
Total Dissipation
PT
When mounted on ceramic substrate(900mm20.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
1.4
W
150
C
- 55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Junction to Ambient
When mounted on ceramic substrate (900mm20.8mm)
Value
RJA
96
Unit
C /W
Electrical Characteristics at Ta  25C
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=10V, VGS=0V
1
A
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
1
A
1.3
V
10
m
Gate Threshold Voltage
VGS(th)
VDS=6V, ID=1mA
Forward Transconductance
gFS
VDS=6V, ID=5A
RDS(on)1
ID=5A, VGS=4.5V
RDS(on)2
RDS(on)3
RDS(on)4
ID=2.5A, VGS=2.5V
Static Drain to Source On-State Resistance
12
V
0.5
13
S
6.4
8
ID=5A, VGS=4.0V
6.8
8.5
11
m
ID=5A, VGS=3.1V
8.8
11
15.4
m
11.2
14
19.6
m
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
60414HK TC-00003123/31714TKIM No. A2313-1/5
EMH2417R
Continued from preceding page
Value
Parameter
Symbol
Conditions
Unit
min
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
typ
max
470
ns
1600
ns
td(off)
8900
ns
Fall Time
tf
6400
ns
Total Gate Charge
Qg
16
nC
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
See specified Test Circuit.
VDS=6V, VGS=4.5V, ID=11A
IS=11A, VGS=0V
3
nC
5
nC
0.8
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
Package
EMH2417R-TL-H
EMH8
Packing Type:TL
Shipping
note
3,000
pcs. / reel
Pb-Free
and
Halogen Free
Marking
LS
TL
Electrical Connection
8
7
6
5
1
2
3
4
LOT No.
Switching Time Test Circuit
No.A2313-2/5
EMH2417R
No.A2313-3/5
EMH2417R
No.A2313-4/5
EMH2417R
Package Dimensions
EMH2417R-TL-H
unit : mm
SOT-383FL / EMH8
CASE 419AT
ISSUE O
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Recommended Soldering
Footprint
1.9
0.4
0.3
0.5
Note on usage : Since the EMH2417R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as
components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any
such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No.A2313-5/5
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