EMH2407R Ordering number : ENA1484 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2407R General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1 : 16mΩ(typ.) Common-drain type Halogen free compliance • • Best suited for LiB charging and discharging switch 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V Drain Current (DC) ID 6 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Channel Temperature PT Tch Storage Temperature Tstg 1.4 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7045-006 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 Taping Type : TL 5 Marking LN 2.1 1.7 8 Lot No. TL 1 V 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : EMH8 Electrical Connection 8 7 6 5 1 2 3 4 http://semicon.sanyo.com/en/network 42810PE TK IM TC-00002344 No. A1484-1/4 EMH2407R Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Ratings Conditions min typ Unit max 20 ID=1mA, VGS=0V VDS=20V, VGS=0V V --1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=3A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Turn-ON Delay Time RDS(on)3 td(on) ID=3A, VGS=4.5V ID=3A, VGS=4V ID=1.5A, VGS=2.5V See specified Test Circuit. 400 ns Rise Time tr See specified Test Circuit. 820 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 4500 ns Fall Time tf See specified Test Circuit. 2100 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=6A 60 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=6A 14 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=6A 13 Diode Forward Voltage VSD IS=6A, VGS=0V 0.8 0.5 1.3 V 5 S 11 16 21 mΩ 11.5 17 23 mΩ 24 34 mΩ 14 nC 1.2 V Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=3A RL=3.33Ω VIN D PW=10μs D.C.≤1% VOUT Rg G EMH2407R P.G 50Ω S Rg=200Ω 2.0 V VDS=10V 4 3.0 VGS=1.5V 2.5 2.0 1.5 3 2 1 25°C 1.0 0.5 0 --25°C 3.5 5°C 4.0 Ta= 7 4.5 ID -- VGS 5 Drain Current, ID -- A Drain Current, ID -- A 5.0 4.0V 2.5V 5.5 ID -- VDS 10.0V 4.5V 6.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT15076 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 1.8 IT14774 No. A1484-2/4 EMH2407R RDS(on) -- VGS 100 RDS(on) -- Ta 45 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V Ta 1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 °C -25 =- °C 75 °C 25 7 5 3 2 0.1 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT14777 Drain Current, ID -- A SW Time -- ID 10000 tf 2 1000 tr 7 5 td(on) 3 2 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A Allowable Power Dissipation, PD -- W 5 7 10 IT14715 PD -- Ta 1.6 0 50 100 150 200 IT14776 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V ASO 2 100 7 5 3 2 Drain Current, ID -- A Switching Time, SW Time -- ns td(off) 3 10 0.001 0.2 VDD=10V VGS=4.5V 7 5 15 10 7 5 3 2 5 2 20 Ambient Temperature, Ta -- °C VDS=10V 7 VG 5 --50 10 2 S= 0A =3. , ID V 0 .0A =4. =3 , ID V GS V .5 =4 V GS 25 IT14775 | yfs | -- ID 10 .5A =1 , ID .5V 30 °C 60 35 --25 3A 70 40 25° C ID=1.5A 80 Ta =7 5°C 90 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 10 7 5 3 2 IDP=60A (PW≤10μs) ID=6A 0.1 7 5 3 2 10 μs 10 0μ 1m s s DC 10 ms 0m s 10 op era tio 1.0 7 5 3 2 1.0 IT14778 Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT15077 When mounted on ceramic substrate (900mm2×0.8mm) 1.4 1.3 1.2 To t 1.0 al 0.8 1u di ss ni ip ati on t 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14780 No. A1484-3/4 EMH2407R Note on usage : Since the EMH2407R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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