1214GN-750V Datasheet L-Band Radar Output Stage GaN Power Transistor L-Band Radar Output Stage GaN Power Transistor Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. 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All other trademarks and service marks are the property of their respective owners. 2 L-Band Radar Output Stage GaN Power Transistor Revision History 1.1 Revision 1.0 Revision 1.0 was the first publication of this document. 3 L-Band Radar Output Stage GaN Power Transistor Contents Revision History.............................................................................................................................. 3 1.1 Revision 1.0 ................................................................................................................................................ 3 2 Product Overview .................................................................................................................... 7 2.1 Applications ............................................................................................................................................... 7 2.2 Key Features............................................................................................................................................... 7 3 Electrical Specifications ............................................................................................................ 8 3.1 Absolute Maximum Ratings ....................................................................................................................... 8 3.2 Electrical Characteristics at 25 °C ............................................................................................................... 8 3.3 Functional Characteristics at 25 °C ............................................................................................................ 8 3.4 Typical Broadband Performance Data (300 µS, 10% Pulsing) .................................................................... 9 3.5 Typical Transistor Performance Over Temperature.................................................................................. 10 4 Transistor Impedance Information......................................................................................... 11 5 Transistor Test Information .................................................................................................... 12 5.1 Transistor Test Circuit Diagram ................................................................................................................ 12 6 Package Outline and Pin Information .................................................................................... 13 6.1 55-Q03 Common Source Package Dimensions and Pin Information ....................................................... 13 4 L-Band Radar Output Stage GaN Power Transistor List of Figures Figure 1 Case Outline 55-Q03 Common Source........................................................................................................... 7 Figure 2 Typical Broadband Performance Data Graphs ............................................................................................... 9 Figure 3 Typical Transistor Performance Over Temperature .................................................................................... 10 Figure 4 Impedance Definition................................................................................................................................... 11 Figure 5 Transistor Test Circuit .................................................................................................................................. 12 Figure 6 55-Q03 Package Dimension and Pin Information ........................................................................................ 13 5 L-Band Radar Output Stage GaN Power Transistor List of Tables Table 1 Absolute Maximum Ratings ............................................................................................................................ 8 Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 8 Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 8 Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) ......................................................................... 9 Table 5 1214GN-750V Component List...................................................................................................................... 12 Table 6 55-Q03 Package Dimensions ......................................................................................................................... 13 6 L-Band Radar Output Stage GaN Power Transistor 2 Product Overview The 1214GN-750V is an internally matched, common source, class AB GaN on SiC HEMT transistor capable of providing a typical power gain of over 17 dB, 750 W minimum of pulsed RF output power at 300 μS pulse width, and 10% long term duty cycle across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance and it is specifically designed for L-Band radar applications. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99. Figure 1 Case Outline 55-Q03 Common Source 2.1 Applications The 1214GN-750V transistor is specifically designed for L-Band radar applications. 2.2 Key Features The following are the key features of the 1214GN-750V GaN transistor: • 1200–1400 MHz, 750 W pulsed output power, 300 µS 10% pulsing • Common source , Class AB, 50 V bias voltage • High efficiency: >55% across the frequency band • Extremely compact size • High power gain: >17 dB • Excellent gain flatness • Ideal for L-Band radar applications • Utilizes all-gold metallization and eutectic die attach for highest reliability • 50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available 7 L-Band Radar Output Stage GaN Power Transistor 3 Electrical Specifications The following table shows the absolute maximum ratings at 25 °C unless otherwise specified. 3.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Rating Value Maximum power dissipation Device dissipation at 25 °C 1466 W Maximum voltage and current Drain-Source voltage (VDSS) 150 V Gate-Source voltage (VGS) –8 to 0 V Storage temperature (TSTG) –55 to 125 °C Operating junction temperature 200 °C Maximum temperatures 3.2 Units Electrical Characteristics at 25 °C The following table shows the typical electrical characteristics at 25 °C. Table 2 Typical Electrical Characteristics at 25 °C Symbol Characteristics Test Conditions Min POUT Output power Freq = 1200, 1300, 1400 MHz 750 GP Power gain POUT = 750 W, Freq = 1200, 1300, 1400 MHz ȠD Drain efficiency POUT = 750 W, Freq = 1200, 1300, 1400 MHz Dr Droop POUT = 750 W, Freq = 1200, 1300, 1400 MHz VSWR-T Load mismatch tolerance POUT = 750 W, Freq = 1400 MHz 3:1 ӨJC Junction-Case thermal resistance 300 μS, 10% duty cycle 1.25 55 Typ Max Units W 17.2 dB 62 % 0.8 dB °C/W Bias Condition: VDD = 50 V, IDQ = 125 mA average current (VGS = –2.0 to –4.5 V typical) with constant gate bias 3.3 Functional Characteristics at 25 °C Table 3 Typical Functional Characteristics at 25 °C Symbol Characteristics Test Conditions ID(Off) Drain leakage current IG(Off) Gate leakage current Min Typ Max Units VGS = –8 V, VD = 150 V 40 mA VGS = –8 V, VD = 0 V 10 mA 8 L-Band Radar Output Stage GaN Power Transistor 3.4 Typical Broadband Performance Data (300 µS, 10% Pulsing) Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) Frequency PIN (W) POUT (W) PD (A) IRL (dB) ȠD (%) GP (dB) Droop (dB) 1200 MHz 14.1 827 2.80 –9.2 61.5 17.68 0.5 1300 MHz 14.1 814 2.69 –9.5 63.1 17.61 0.4 1400 MHz 14.1 803 2.61 –10.7 64.2 17.55 0.3 Figure 2 Typical Broadband Performance Data Graphs 9 L-Band Radar Output Stage GaN Power Transistor 3.5 Typical Transistor Performance Over Temperature The following figure shows the transistor performance over temperature. Figure 3 Typical Transistor Performance Over Temperature 10 L-Band Radar Output Stage GaN Power Transistor 4 Transistor Impedance Information The following diagram shows the transistor impedance information for 1214GN-750V. Figure 4 Impedance Definition Output Matching Network D Input Matching Network G S ZLOAD 50 Ω ZSOURCE 50 Ω Note: ZSOURCE is looking into the input circuit ZLOAD is looking into the output circuit For information about source and load impedances for 1214GN-750V, contact your Microsemi representative. 11 L-Band Radar Output Stage GaN Power Transistor 5 Transistor Test Information 5.1 Transistor Test Circuit Diagram Figure 5 Transistor Test Circuit The board material is Roger Duroid 6010LM at 25 mil thick; εr = 10.2. The following table lists the components for 1214GN-750V. Table 5 1214GN-750V Component List Item Description Value C1 ATC, 100A size 100 pF C2 ATC, 800B size 82 pF C31 ATC, 200B size 100,000 pF C41 CER Cap 200 V X7R 1206 size 1000 pf C51 ATC, 800B size 100 pF C6 Electrolytic Cap (63 V) 12,000 μF R1 Chip resistor size 0805 40.5 Ω R2 Chip resistor size 0805 5.1 Ω L RF choke, 20 AWG copper wire solder on top L = 1350 mil 1. Two of these are needed 12 L-Band Radar Output Stage GaN Power Transistor 6 Package Outline and Pin Information The 1214GN-750V transistor is available in the 55-Q03 Common Source Outline. 6.1 55-Q03 Common Source Package Dimensions and Pin Information Figure 6 55-Q03 Package Dimension and Pin Information Pin 1 = Drain, Pin 2 = Source, Pin 3 = Gate Table 6 55-Q03 Package Dimensions Dim Millimeters Tol (mm) Inches Tol (in.) A 34.030 0.250 1.340 0.010 B 9.780 0.250 0.385 0.010 C 3.550 0.190 0.140 0.007 D 12.700 0.130 0.500 0.005 E 1.020 0.130 0.040 0.005 F 1.650 0.130 0.065 0.005 G 0.130 0.030 0.005 0.001 H 19.430 0.760 0.765 0.030 I 45° 5° 45° 5° J 19.810 0.250 0.780 0.030 K 3.300 DIA 0.130 0.130 DIA 0.005 L 9.400 0.130 0.370 0.005 M 27.940 MAX 1.100 MAX 13