1214GN-750V

1214GN-750V Datasheet
L-Band Radar Output Stage GaN Power
Transistor
L-Band Radar Output Stage GaN Power Transistor
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its
products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or
use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited
testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are
believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products,
alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or
parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test
and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire
risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such
information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any
changes to the information in this document or to any products and services at any time without notice.
Microsemi Corporate Headquarters
One Enterprise, Aliso Viejo,
CA 92656 USA
Within the USA: +1 (800) 713-4113
Outside the USA: +1 (949) 380-6100
Sales: +1 (949) 380-6136
Fax: +1 (949) 215-4996
E-mail: [email protected]
www.microsemi.com
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications,
defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal
integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time
solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and
communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and
midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately
4,800 employees globally. Learn more at www.microsemi.com.
©2016 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi
Corporation. All other trademarks and service marks are the property of their respective owners.
2
L-Band Radar Output Stage GaN Power Transistor
Revision History
1.1
Revision 1.0
Revision 1.0 was the first publication of this document.
3
L-Band Radar Output Stage GaN Power Transistor
Contents
Revision History.............................................................................................................................. 3
1.1
Revision 1.0 ................................................................................................................................................ 3
2 Product Overview .................................................................................................................... 7
2.1
Applications ............................................................................................................................................... 7
2.2
Key Features............................................................................................................................................... 7
3 Electrical Specifications ............................................................................................................ 8
3.1
Absolute Maximum Ratings ....................................................................................................................... 8
3.2
Electrical Characteristics at 25 °C ............................................................................................................... 8
3.3
Functional Characteristics at 25 °C ............................................................................................................ 8
3.4
Typical Broadband Performance Data (300 µS, 10% Pulsing) .................................................................... 9
3.5
Typical Transistor Performance Over Temperature.................................................................................. 10
4 Transistor Impedance Information......................................................................................... 11
5 Transistor Test Information .................................................................................................... 12
5.1
Transistor Test Circuit Diagram ................................................................................................................ 12
6 Package Outline and Pin Information .................................................................................... 13
6.1
55-Q03 Common Source Package Dimensions and Pin Information ....................................................... 13
4
L-Band Radar Output Stage GaN Power Transistor
List of Figures
Figure 1 Case Outline 55-Q03 Common Source........................................................................................................... 7
Figure 2 Typical Broadband Performance Data Graphs ............................................................................................... 9
Figure 3 Typical Transistor Performance Over Temperature .................................................................................... 10
Figure 4 Impedance Definition................................................................................................................................... 11
Figure 5 Transistor Test Circuit .................................................................................................................................. 12
Figure 6 55-Q03 Package Dimension and Pin Information ........................................................................................ 13
5
L-Band Radar Output Stage GaN Power Transistor
List of Tables
Table 1 Absolute Maximum Ratings ............................................................................................................................ 8
Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 8
Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 8
Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) ......................................................................... 9
Table 5 1214GN-750V Component List...................................................................................................................... 12
Table 6 55-Q03 Package Dimensions ......................................................................................................................... 13
6
L-Band Radar Output Stage GaN Power Transistor
2
Product Overview
The 1214GN-750V is an internally matched, common source, class AB GaN on SiC HEMT transistor
capable of providing a typical power gain of over 17 dB, 750 W minimum of pulsed RF output power
at 300 μS pulse width, and 10% long term duty cycle across the 1200 to 1400 MHz band. The
transistor has internal pre-match for optimal performance and it is specifically designed for L-Band
radar applications. It utilizes gold metallization and eutectic die attach to provide the highest
reliability and superior ruggedness. Export Classification: EAR-99.
Figure 1 Case Outline 55-Q03 Common Source
2.1
Applications
The 1214GN-750V transistor is specifically designed for L-Band radar applications.
2.2
Key Features
The following are the key features of the 1214GN-750V GaN transistor:
•
1200–1400 MHz, 750 W pulsed output power, 300 µS 10% pulsing
•
Common source , Class AB, 50 V bias voltage
•
High efficiency: >55% across the frequency band
•
Extremely compact size
•
High power gain: >17 dB
•
Excellent gain flatness
•
Ideal for L-Band radar applications
•
Utilizes all-gold metallization and eutectic die attach for highest reliability
•
50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available
7
L-Band Radar Output Stage GaN Power Transistor
3
Electrical Specifications
The following table shows the absolute maximum ratings at 25 °C unless otherwise specified.
3.1
Absolute Maximum Ratings
Table 1 Absolute Maximum Ratings
Rating
Value
Maximum power dissipation
Device dissipation at 25 °C
1466
W
Maximum voltage and current
Drain-Source voltage (VDSS)
150
V
Gate-Source voltage (VGS)
–8 to 0
V
Storage temperature (TSTG)
–55 to 125
°C
Operating junction temperature
200
°C
Maximum temperatures
3.2
Units
Electrical Characteristics at 25 °C
The following table shows the typical electrical characteristics at 25 °C.
Table 2 Typical Electrical Characteristics at 25 °C
Symbol
Characteristics
Test Conditions
Min
POUT
Output power
Freq = 1200, 1300, 1400 MHz
750
GP
Power gain
POUT = 750 W, Freq = 1200, 1300,
1400 MHz
ȠD
Drain efficiency
POUT = 750 W, Freq = 1200, 1300,
1400 MHz
Dr
Droop
POUT = 750 W, Freq = 1200, 1300,
1400 MHz
VSWR-T
Load mismatch tolerance
POUT = 750 W, Freq = 1400 MHz
3:1
ӨJC
Junction-Case thermal
resistance
300 μS, 10% duty cycle
1.25
55
Typ
Max
Units
W
17.2
dB
62
%
0.8
dB
°C/W
Bias Condition: VDD = 50 V, IDQ = 125 mA average current (VGS = –2.0 to –4.5 V typical) with constant
gate bias
3.3
Functional Characteristics at 25 °C
Table 3 Typical Functional Characteristics at 25 °C
Symbol
Characteristics
Test Conditions
ID(Off)
Drain leakage current
IG(Off)
Gate leakage current
Min
Typ
Max
Units
VGS = –8 V, VD = 150 V
40
mA
VGS = –8 V, VD = 0 V
10
mA
8
L-Band Radar Output Stage GaN Power Transistor
3.4
Typical Broadband Performance Data (300 µS, 10% Pulsing)
Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing)
Frequency
PIN (W)
POUT (W)
PD (A)
IRL (dB)
ȠD (%)
GP (dB)
Droop (dB)
1200 MHz
14.1
827
2.80
–9.2
61.5
17.68
0.5
1300 MHz
14.1
814
2.69
–9.5
63.1
17.61
0.4
1400 MHz
14.1
803
2.61
–10.7
64.2
17.55
0.3
Figure 2 Typical Broadband Performance Data Graphs
9
L-Band Radar Output Stage GaN Power Transistor
3.5
Typical Transistor Performance Over Temperature
The following figure shows the transistor performance over temperature.
Figure 3 Typical Transistor Performance Over Temperature
10
L-Band Radar Output Stage GaN Power Transistor
4
Transistor Impedance Information
The following diagram shows the transistor impedance information for 1214GN-750V.
Figure 4 Impedance Definition
Output Matching
Network
D
Input Matching
Network
G
S
ZLOAD
50 Ω
ZSOURCE
50 Ω
Note:
ZSOURCE is looking into the input circuit
ZLOAD is looking into the output circuit
For information about source and load impedances for 1214GN-750V, contact your Microsemi
representative.
11
L-Band Radar Output Stage GaN Power Transistor
5
Transistor Test Information
5.1
Transistor Test Circuit Diagram
Figure 5 Transistor Test Circuit
The board material is Roger Duroid 6010LM at 25 mil thick; εr = 10.2.
The following table lists the components for 1214GN-750V.
Table 5 1214GN-750V Component List
Item
Description
Value
C1
ATC, 100A size
100 pF
C2
ATC, 800B size
82 pF
C31
ATC, 200B size
100,000 pF
C41
CER Cap 200 V X7R 1206 size
1000 pf
C51
ATC, 800B size
100 pF
C6
Electrolytic Cap (63 V)
12,000 μF
R1
Chip resistor size 0805
40.5 Ω
R2
Chip resistor size 0805
5.1 Ω
L
RF choke, 20 AWG copper wire solder on top
L = 1350 mil
1.
Two of these are needed
12
L-Band Radar Output Stage GaN Power Transistor
6
Package Outline and Pin Information
The 1214GN-750V transistor is available in the 55-Q03 Common Source Outline.
6.1
55-Q03 Common Source Package Dimensions and Pin Information
Figure 6 55-Q03 Package Dimension and Pin Information
Pin 1 = Drain, Pin 2 = Source, Pin 3 = Gate
Table 6 55-Q03 Package Dimensions
Dim
Millimeters
Tol (mm)
Inches
Tol (in.)
A
34.030
0.250
1.340
0.010
B
9.780
0.250
0.385
0.010
C
3.550
0.190
0.140
0.007
D
12.700
0.130
0.500
0.005
E
1.020
0.130
0.040
0.005
F
1.650
0.130
0.065
0.005
G
0.130
0.030
0.005
0.001
H
19.430
0.760
0.765
0.030
I
45°
5°
45°
5°
J
19.810
0.250
0.780
0.030
K
3.300 DIA
0.130
0.130 DIA
0.005
L
9.400
0.130
0.370
0.005
M
27.940
MAX
1.100
MAX
13
Similar pages