BLA6H0912-500 LDMOS avionics radar power transistor Rev. 03 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 128 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) 960 to 1200 50 450 17 50 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 128 μs with δ of 10 %: Output power = 450 W Power gain = 17 dB Efficiency = 50 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (960 MHz to 1215 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name BLA6H0912-500 - Description Version flanged ceramic package; 2 mounting holes; 2 leads SOT634A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 100 V VGS gate-source voltage −0.5 +13 V ID drain current - 54 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Typ Unit 5. Thermal characteristics Table 5. BLA6H0912-500_3 Product data sheet Thermal characteristics Symbol Parameter Conditions Zth(j-c) transient thermal impedance from junction to case Tcase = 85 °C; PL = 450 W tp = 32 μs; δ = 2 % 0.03 K/W tp = 128 μs; δ = 10 % 0.08 K/W tp = 2400 μs; δ = 6.4 % 0.2 K/W All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.3 1.8 2.2 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 3.6 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 53.5 64 - A nA IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 360 gfs forward transconductance VDS = 10 V; ID = 405 mA 2.50 3.5 4.55 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 14.18 A - 70 85 mΩ Table 7. RF characteristics Mode of operation: pulsed RF; f = 960 MHz to 1215 MHz; tp = 128 μs; δ = 10 %; RF performance at VDS = 50 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter PL output power Conditions Min Typ Max Unit VDS drain-source voltage Gp power gain RLin input return loss PL = 450 W 7 11 - dB ηD drain efficiency PL = 450 W 45 50 - % Pdroop(pulse) pulse droop power PL = 450 W - 0 0.3 dB tr rise time PL = 450 W - 20 50 ns tf fall time PL = 450 W - 6 50 ns - 450 - W PL = 450 W - - 50 V PL = 450 W 16 17 - dB 6.1 Ruggedness in class-AB operation The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: f = 960 MHz, 1030 MHz, 1090 MHz or 1215 MHz. VDS = 50 V; IDq = 100 mA; PL = 450 W; tp = 128 μs; δ = 10 %. BLA6H0912-500_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL MHz Ω Ω 960 1.36 − j1.45 1.49 − j1.48 1030 1.54 − j1.25 1.51 − j1.45 1090 1.67 − j1.22 1.36 − j1.47 1140 1.68 − j1.29 1.15 − j1.41 1215 1.43 − j1.42 0.79 − j1.17 drain ZL gate ZS 001aaf059 Fig 1. BLA6H0912-500_3 Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 7.2 Application circuit C5 C2 R1 C1 C3 C12 C13 C4 C14 R2 C15 C6 C11 C8 C7 001aal599 Printed-Circuit Board (PCB) material: Duroid 6006 with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 2. Component layout Table 9. List of components See Figure 2 for component layout. BLA6H0912-500_3 Product data sheet Component Description Value C1, C3 multilayer ceramic chip capacitor 10 μF; 35 V C2, C3, C14 multilayer ceramic chip capacitor 39 pF [1] C4, C13 multilayer ceramic chip capacitor 1 nF [1] C6, C7 multilayer ceramic chip capacitor 6.8 pF [2] C5, C8, C11, C12 multilayer ceramic chip capacitor 82 pF [2] C15 electrolytic capacitor 47 μF; 63 V R1 SMD resistor 56 Ω R2 metal film resistor 51 Ω [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 800B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 Remarks SMD 0603 © NXP B.V. 2010. All rights reserved. 5 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 8. Test information 8.1 Performance curves 001aal600 600 001aal601 20 Gp (dB) PL (W) (1) (2) (3) (4) (5) 16 (1) (2) (3) (4) (5) 400 12 8 200 4 0 0 0 6 12 18 0 Pi (W) (1) f = 960 MHz (2) f = 1030 MHz (2) f = 1030 MHz (3) f = 1090 MHz (3) f = 1090 MHz (4) f = 1140 MHz (4) f = 1140 MHz (5) f = 1215 MHz (5) f = 1215 MHz Load power as a function of input power; typical values Product data sheet 600 VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %. (1) f = 960 MHz BLA6H0912-500_3 400 PL (W) VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %. Fig 3. 200 Fig 4. Power gain as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 001aal602 70 ηD (%) 60 001aal603 20 70 ηD (%) Gp (dB) 18 Gp 60 16 ηD 50 50 (1) (2) (3) (4) (5) 40 30 14 40 12 30 20 10 0 0 200 400 10 950 600 1050 20 1250 1150 PL (W) f (MHz) VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %. VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz Fig 5. Drain efficiency as a function of load power; typical values Fig 6. Power gain and drain efficiency as function of frequency; typical values 001aal604 16 RLin (dB) 12 8 4 0 950 1050 1150 1250 f (MHz) PL = 500 W; VDS = 50 V; IDq = 100 mA; tp = 128 μs; δ = 10 %. Fig 7. BLA6H0912-500_3 Product data sheet Input return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 8.2 Curves measured under Mode-S ELM pulse-conditions 001aal605 600 001aal606 20 Gp (dB) PL (W) (1) 16 (1) 400 (2) (2) 12 8 200 4 0 0 0 4 8 12 16 20 0 200 400 Pi (W) f = 1030 MHz; VDS = 50 V; IDq = 100 mA. f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 °C (1) Th = 25 °C (2) Th = 65 °C (2) Th = 65 °C Fig 8. 600 PL (W) Load Power as a function of input power; typical values Fig 9. Power gain as a function of load power; typical values 001aal607 60 ηD (%) (2) (1) 40 20 0 0 200 400 600 PL (W) f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 °C (2) Th = 65 °C Fig 10. Drain efficiency as function of load power; typical values BLA6H0912-500_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 8.3 Curves measured under Mode-S interrogator pulse-conditions 001aal608 600 001aal609 20 Gp (dB) PL (W) (1) 16 (1) (2) 400 (2) 12 8 200 4 0 0 0 4 8 12 16 20 0 200 400 Pi (W) 600 PL (W) f = 1030 MHz; VDS = 50 V; IDq = 100 mA. f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 °C (1) Th = 25 °C (2) Th = 65 °C (2) Th = 65 °C Fig 11. Load Power as a function of input power; typical values Fig 12. Power gain as a function of load power; typical values 001aal610 50 (1) ηD (%) (2) 40 30 20 10 0 0 200 400 600 PL (W) f = 1030 MHz; VDS = 50 V; IDq = 100 mA. (1) Th = 25 °C (2) Th = 65 °C Fig 13. Drain efficiency as function of load power; typical values BLA6H0912-500_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT634A D A F 3 D1 U1 B q C c 1 L p U2 E1 E w1 M A M B M A 2 L Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 mm 4.83 3.68 12.82 12.57 0.15 0.08 22.58 22.12 22.56 22.15 inches 0.190 0.145 0.505 0.495 0.006 0.003 0.889 0.871 0.888 0.872 OUTLINE VERSION F L p Q q U1 U2 w1 w2 13.34 13.34 13.08 13.08 1.14 0.89 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 13.84 13.59 0.25 0.51 0.525 0.525 0.515 0.515 0.045 0.035 0.210 0.170 0.133 0.123 0.067 0.057 1.100 1.345 1.335 0.545 0.535 0.010 0.020 E1 E REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-11-27 03-05-01 SOT634A Fig 14. Package outline SOT634A BLA6H0912-500_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description DME Distance Measuring Equipment ELM Extended Length Message JTIDS Joint Tactical Information Distribution System LDMOS Laterally Diffused Metal-Oxide Semiconductor Mode-S Mode Select RF Radio Frequency SMD Surface Mounted Device TACAN TACtical Air Navigation TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLA6H0912-500_3 20100330 Product data sheet - BLA6H0912-500_2 Modifications: • • • • • • • • • • Table 7 on page 3: VCC changed into VDS. Table 1 on page 1: changed value of PL. Table 4 on page 2: changed minimum value of VGS. Table 5 on page 2: changed several values. Table 6 on page 3: changed several values. Table 7 on page 3: changed several values. Section 6.1 on page 3: changed several values. Table 8 on page 4: changed several values. Added Section 7.2 on page 5. Added Section 8 on page 6. BLA6H0912-500_2 20100302 Product data sheet - BLA6H0912-500_1 BLA6H0912-500_1 20090305 Objective data sheet - - BLA6H0912-500_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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All rights reserved. 12 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLA6H0912-500_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 30 March 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BLA6H0912-500 NXP Semiconductors LDMOS avionics radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.2 8.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Performance curves . . . . . . . . . . . . . . . . . . . . . 6 Curves measured under Mode-S ELM pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 8 Curves measured under Mode-S interrogator pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 30 March 2010 Document identifier: BLA6H0912-500_3