2SA1036KxLT1(SOT 23)

WILLAS
FM120-M+
2SA1036KxLT1
THRU
Medium
Power Transistor (32V, 0.5A)
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Features
surge capability.
• High
1) Large for
IC. overvoltage protection.
• Guardring
CMax. = 500mA
I
• Ultra high-speed switching.
2) Low
VCE(sat).planar
Ideal chip,
for low-voltage
epitaxial
metal silicon junction.
• Silicon
operation.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
0.071(1.8)
0.056(1.4)
MIL-STD-19500
3) We declare/228
that the material of product
product for packing
coderequirements.
suffix "G"
• RoHS compliance
with RoHS
1
Halogen free product for packing code suffix "H"
Pb-Free package is available
Mechanical
data
RoHS product for packing code suffix ”G”
: UL94-V0
flame
• EpoxyHalogen
freerated
product
forretardant
packing code suffix “H”
2
SOT-23
Level 1
: Molded Sensitivity
plastic, SOD-123H
• Case Moisture
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Structure
• Polarity
: Indicated by cathode band
Epitaxial planar
type
Position
: Any
• Mounting
PNP silicon transistor
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
3
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings atFDEVICE
25℃ ambient
temperature unless otherwise specified.
MARKING
Single phase half wave, 60Hz, resistive of inductive load.
1) load,
2SA1036KQLT1
For capacitive
derate current=HQ
by 20%
2)
2SA1036KRLT1
RATINGS =HR
2
PNP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
FAbsolute maximum ratings (Ta = 25_C)
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.0
30
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.50
0.85
0.9
0.92
0.5
IR
@T A=125℃
0.70
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
ORDERING INFORMATION
2- Thermal Resistance From Junction to Ambient
Device
2SA1036Kx LT1G
2012-06
2012-
Package
SOT-23
Shipping
3000/Tape & Reel
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1036KxLT1
THRU
Medium
Power Transistor (32V, 0.5A)
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FElectrical characteristics (Ta = 25_C)
optimize board space.
Low power loss, high efficiency.
•Parameter
Symbol
Min.
Typ.
High
current
capability,
low
forward
voltage
drop.
•
Collector-base breakdown voltage
BVCBO
— 40
—
• High surge capability.
Collector-emitter breakdown voltage
BVCEO
— 32
—
• Guardring for overvoltage protection.
Emitter-base
BVEBO
—5
—
high-speedvoltage
switching.
• Ultra breakdown
epitaxial planar chip, metal
• Silicon
Collector
cutoff current
ICBOsilicon junction.
—
—
• Lead-free parts meet environmental standards of
Max.
Unit
—
V
—
for packing
"G"
• RoHS product
Collector-emitter
saturation
voltagecode suffix
VCE(sat)
—
Halogen free product for packing code suffix "H"
DC current transfer ration
hFE
120
—
—
—
—
Emitter MIL-STD-19500
cutoff current
/228
IEBO
Mechanical data
0.012(0.3) Typ.
IC= — 100µA
—
V
Ic= — 1mA
—
V
IE= — 100µA
—1
µA
VCB= — 20v
—1
µA
VEB= — 4V
— 0.4
V
IC/IB= — 100mA/ — 10mA
390
—
VCE= — 3V,Ic= — 10mA
200
—
MHZ
7
—
pF
—
Transition frequence
fT
• Epoxy : UL94-V0 rated flame retardant
Output capacitance
Cob
• Case : Molded plastic, SOD-123H
Conditions
0.146(3.7)
0.130(3.3)
• Terminals :Plated terminals, solderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
0.040(1.0)
VCE= — 5V,IE=20mA,f=100MHz
VCB= — 10V,IE=0A,f=1MHz
0.031(0.8) Typ.
,
0.024(0.6)
0.031(0.8) Typ.
hFE values are classified as follows.
Method 2026
Item
Q
R band
• Polarity : Indicated
by cathode
Dimensions in inches and (millimeters)
Hfe
Position : Any 180~390
• Mounting120~270
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1036KxLT1
THRU
(32V, 0.5A)
Medium
Power
FM1200-M+
1.0A SURFACE
MOUNT Transistor
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Electrical
characteristic
curves power dissipation offers
design, excellent
• Batch process
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1036KxLT1
THRU
Medium
Power Transistor (32V, 0.5A)
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
SOT-23
to
• Low profile surface mounted application in order
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
of
• Lead-free parts meet environmental standards
.122(3.10)
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
.063(1.60)
.047(1.20)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G" .106(2.70)
Halogen free product for packing code suffix "H"
Mechanical data
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.008(0.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.080(2.04)
.070(1.78)
RATINGS
.083(2.10)
0.031(0.8) Typ.
.110(2.80)
0.031(0.8) Typ.
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.003(0.08)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
VRRM
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
.004(0.10)MAX.
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
1.0
30
40
120
-55 to +125
.055(1.40)
.035(0.89)
0.012(0.3) Typ.
A
A
℃
-55 to +150
- 65 to +175
.020(0.50)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
.012(0.30)
V
0.9
0.92
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
0.5
IR
10
Rated DC Blocking Voltage
@T A=125℃
NOTES:
Dimensions in inches and (millimeters)
m
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1036KxLT1
THRU
(32V, 0.5A)
Medium
Power
Transistor
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
forward voltage drop.
• High current capability,
(2) low (1)
Tape&Reel: 3 Kpcs/Reel surge capability.LT1 G ‐WS • High2SA1036K x
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
(2) CLASSIFICATION OF h
RANK epitaxial planar chip,FE metal
silicon junction.
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or A
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150
Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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