MMBT555xLT1(SOT 23)

WILLAS
FM120-M+
MMBT555xLT1
THRU
High Voltage
Transistor
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
space. AND ORDERING INFORMATION
DEVICEboard
MARKING
FEATURE
• Low power loss, high efficiency.
Devicecapability, low
Marking
Shipping
forward voltage drop.
• High current
surge capability.
• High
MMBT5550LT1
M1F
3000/Tape&Reel
• Guardring for overvoltage protection.
• Ultra high-speed switching.
MMBT5551LT1
G1
3000/Tape&Reel
epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
ƽ
0.146(3.7)
We declare that
the material of product
0.130(3.3)
0.012(0.3) Typ.
compliance with RoHS requirements.
Pb-Free package is available
RoHS product for packing code suffix ”G”
0.071(1.8)
Halogen free product for packing code
suffix “H”
Moisture Sensitivity Level 1
0.056(1.4)
MAXIMUM RATINGS
MIL-STD-19500 /228
• RoHS product for packing
Ratingcode suffix "G"
Symbol
Halogen free product for packing code suffix "H"
Collector-Emitter Voltage
VCEO
Mechanical data
MMBT5550
MMBT5551
• Epoxy : UL94-V0 rated flame retardant
Value
Unit
Vdc
140
160
0.040(1.0)
0.024(0.6)
Collector-Base
Voltage
VCBO
: Molded plastic,
SOD-123H
• Case
160
MMBT5550
,
• Terminals :Plated terminals, solderable
per MIL-STD-750
MMBT5551
180
Method 2026
Emitter-Base Voltage
Polarity : Indicated by cathode band
Collector Current - Continuous
Mounting Position : Any
•
•
CHARACTERISTICS
•THERMAL
Weight : Approximated
0.011 gram
Vdc0.031(0.8) Typ.
VEBO
6.0
Vdc
IC
600
mAdc
Characteristic
Symbol
SOT–23
Dimensions in inches and (millimeters)
3
COLLECTOR
Max
1
Unit
BASE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Total Device Dissipation FR– 5 Board, (1)
225
mW
Ratings at 25℃ ambient temperature unless otherwise specified. PD
2
TA = 25°C
EMITTER
Single phase half wave, 60Hz, resistive of inductive load.
Derate above 25°C
1.8
mW/°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Total Device
Dissipation
300
mW
PD
Marking CodeAlumina Substrate, (2) TA = 25°C
12
13
14
15
16
18
10
115
120
20
30
40
50
80
100
150
200
Maximum Recurrent
Volts
VRRM
Derate Peak
aboveReverse
25°C Voltage
2.4
mW/°C 60
Thermal
Maximum RMS
VoltageResistance, Junction to Ambient VRMS
Storage Temperature
Maximum DCJunction
Blocking and
Voltage
VDC
14RθJA
J , Tstg
T
20
21
417
28
–55
to
+150
30
40
°C/W
35
50 °C
O
unless otherwise noted.)
ELECTRICAL CHARACTERISTICS (TA = I25°C
Maximum Average Forward Rectified Current
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
Characteristic
superimposed on rated load (JEDEC method)
OFF CHARACTERISTICS
Typical Thermal
Resistance (Note 2)
RΘJA
Typical Junction
Capacitance (Note
1)
Collector–Emitter
Breakdown
Voltage(3)
Storage Temperature Range
CHARACTERISTICS
µAdc, I E = 0)
(I C = 100
Maximum Forward Voltage at 1.0A DC
Maximum Average
Reverse Breakdown
Current at @T
A=25℃
Emitter–Base
Voltage
NOTES:
Symbol
56
70
105
140
Volts
60
80
100
150
200
Volts
1.0
Max 30
40
120
V (BR)CEO
-55 to +125
140
160
Unit
Amps
Vdc
℃/W
PF
-55 to +150
℃
℃
Vdc
IR
V
0.5
(BR)EBO
6.0
— 10
Collector Cutoff Current
( V CB = 100Vdc, I E = 0)
MMBT5550
—
100
( V CB = 120Vdc, I E = 0)
MMBT5551
—
50
( V CB = 100Vdc, I E = 0, T A=100 °C)
MMBT5550
—
100
( V CB = 120Vdc, I E = 0, T A=100 °C)
MMBT5551
—
50
—
50
Vdc
mAmp
I CBO
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
2012-06
2012-11
FM150-MH FM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH
MMBT5550
160
—
Volts
0.9
0.92
VF
0.50
0.70—
0.85
MMBT5551
180
@T A=125℃
2- Thermal Resistance From Junction to Ambient
Amps
—
- 65 to +175
—
V (BR)CBO
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Min
42
TSTG
MMBT5551
Collector–Base Breakdown Voltage
Rated DC Blocking
Voltage
(I E = 10
µAdc, I C = 0)
CJ
TJ
MMBT5550
Operating Temperature
RangeI B = 0)
(I C = 1.0 mAdc,
0.031(0.8) Typ.
I EBO
nAdc
µAdc
nAdc
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT555xLT1
FM1200-M+
High MOUNT
Voltage
Transistor
1.0A SURFACE
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
= 25°C
ELECTRICAL
CHARACTERISTICS
profile surface
mounted application(TinAorder
tounless otherwise noted) (Continued)
• Low
optimize board space.Characteristic
Symbol
loss, high efficiency.
• Low
ONpower
CHARACTERISTICS
capability, low forward voltage drop.
• High current
DC Current Gain
• High surge capability.
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
MMBT5550
for overvoltage protection.
• Guardring
MMBT5551
• Ultra high-speed switching.
(I
C = 10 mAdc, V CE = 5.0 Vdc)
• Silicon epitaxial planar chip, metal silicon junction. MMBT5550
• Lead-free parts meet environmental standards of MMBT5551
(I C = 50 mAdc,
V CE = 5.0Vdc)
MIL-STD-19500
/228
hFE
Halogen
free product forSaturation
packing code
suffix "H"
Collector–Emitter
Voltage
Mechanical
data
(I = 10 mAdc,
I = 1.0 mAdc)
60
80
60
80
20
30
—
—
250
250
—
—
—
0.15
—
—
0.25
0.20
V
—
1.0
—
—
1.2
1.0
0.071(1.8)
0.056(1.4)
Vdc
0.031(0.8) Typ.
Both Types
•
• Mounting
(I C =Position
50 mAdc,: Any
I B = 5.0 mAdc)
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
VCE(sat)
• Epoxy : UL94-V0 rated flame retardant
I B =SOD-123H
5.0 mAdc )
MMBT5550
C = 50 mAdc,
plastic,
• Case :(IMolded
,
MMBT5551
• Terminals :Plated terminals, solderable per MIL-STD-750
Base–Emitter Saturation Voltage
Method 2026
(I C = 10 mAdc, I B = 1.0 mAdc)
Polarity : Indicated by cathode band
Unit
––
Both Types
B
Max
0.146(3.7)
0.130(3.3)
MMBT5550
MMBT5551
• RoHS product for packing code suffix "G"
C
Min
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Vdc
BE(sat)
Dimensions in inches and (millimeters)
MMBT5550
MMBT5551
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MMBT555xLT1
High Voltage
Transistor
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
h FE, DC CURRENT GAIN (NORMALIZED)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
500
• Low profile surface mounted application in order to
optimize
300 board Tspace.
= +125°C
V CE = 1.0 V
J
200
loss, high efficiency.
• Low power
+25°C
low forward voltage drop.
• High current capability,
100
capability.
• High surge
–55°C
protection.
• Guardring for overvoltage
50
• Ultra high-speed switching.
• Silicon30epitaxial planar chip, metal silicon junction.
20
parts meet environmental standards of
• Lead-free
V CE = 5.0 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
for packing code suffix "G"
10
• RoHS product
7.0free product for packing code suffix "H"
Halogen
5.0
Mechanical
data
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.040(1.0)
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
• Epoxy : UL94-V0 rated flame retardant
I C , COLLECTOR CURRENT (mA)
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
Figure, 15. DC Current Gain
• Terminals :Plated terminals, solderable per MIL-STD-750
Dimensions in inches and (millimeters)
I C = 1.0 mA
0.6
10 mA
30 mA
0.2
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VRRM
12
20
13
30
14
40
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20 I B , BASE
30 CURRENT
40
50
(mA)
Maximum Average Forward Rectified Current
IO Figure 16. Collector Saturation Region 1.0
30
IFSM
0
Maximum Recurrent Peak Reverse Voltage
0.01
0.02
0.05
0.1
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
10
1
V CE = 30 V
10
I C, COLLECTOR CURRENT (µA)
Storage Temperature
RangeT J = 125°C
10 –1
I C= I
TSTG
CES
10 –2CHARACTERISTICS
VF
REVERSE
FORWARD
Maximum Average
10 Reverse Current at @T A=25℃
NOTES:
–3
10 –4
@T A=125℃
2012-06
2012-11
2.0
42
18
80
5.0
56
60
10
80
40
120
T J = 25°C
10
100
115
150
70
105
20
100
50
150
120
200
Volts
140
Volts
200
Volts
Amps
Amps
℃/W
PF
-55 to +150
℃
to +175
V BE(sat) @ I C /I- B65
= 10
℃
0.6
0.50
IR
1- Measured at 1 MHZ
10 –5 and applied reverse voltage of 4.0 VDC.
–0.2 –0.1
0
2- Thermal Resistance –0.4
From–0.3
Junction
to Ambient
35
16
60
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
75°C
Maximum Forward Voltage at 1.0A DC
25°C
1.0
15
50
-55 to +125 0.8
TJ
Operating Temperature Range
1.0
CJ
Typical Junction Capacitance
(Note 1)
0
0.5
RΘJA
Typical Thermal Resistance (Note 2)
Rated DC Blocking Voltage
0.2
V, VOLTAGE (VOLTS)
0.005
Maximum RMS Voltage
100 mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
0.4
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
0.031(0.8) Typ.
Method 2026
1.0
• Polarity : Indicated by cathode band
T J = 25°C
Position : Any
• Mounting
0.8
• Weight : Approximated 0.011 gram
100
0.024(0.6)
0.1
0.2
0.3
0.4
0.5
0.6
0.70
0.4
0.9
0.85
0.92
0.5
mAmp
10
0.2
Volts
V CE(sat) @ I C /I B = 10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
V BE , BASE–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
100
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT555xLT1
High Voltage
Transistor
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
, TEMPERATURE COEFFICIENT (mV/°C)
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
2.5 surface mounted application in order to
• Low profile
optimize 2board space.
T J = –55°C to +135°C
loss, high efficiency.
• Low power
1.5
• High current capability, low forward voltage drop.
1.0
capability.
• High surge
0.5 for overvoltage protection. θ VC for V CE(sat)
• Guardring
0
switching.
• Ultra high-speed
epitaxial planar chip, metal silicon junction.
• Silicon–0.5
parts meet environmental standards of
• Lead-free
–1.0
•
0.146(3.7)
0.130(3.3)
10.2 V
V
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
50
0.071(1.8)
R
0.056(1.4)
3.0 k
C
V out
5.1 k
100
V in
t r , t f <10 ns
DUTY CYCLE = 1.0%
30 V
RB
INPUT PULSE
1N914
0.040(1.0)
0.024(0.6)
100
• Epoxy : UL94-V0 rated flame retardant
I CSOD-123H
, COLLECTOR CURRENT (mA)
• Case : Molded plastic,
,
Figure
5. Temperature
• Terminals :Plated terminals,
solderable perCoefficients
MIL-STD-750
θ
100
0.25 mF
10 ms
20 30
V CC
–8.8 V
V in
MIL-STD-19500 /228
θ VB for V BE(sat)
–1.5
RoHS product
for packing code suffix "G"
Halogen–2.0
free product for packing code suffix "H"
Mechanical
data
–2.5
V BB
0.012(0.3) Typ.
Values Shown are for I C @ 10 mA
0.031(0.8) Typ.
Figure 6. Switching Time Test Circuit
0.031(0.8) Typ.
Method 2026
• Polarity
: Indicated by cathode band
100
70
Position : Any
• Mounting
50
• Weight : Approximated 0.011 gram
500
C, CAPACITANCE (pF)
t r @ V CC = 120 V
300
200
20MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
t r @ V CC = 30 V
RATINGS
3.0
t, TIME (ns)
Ratings at 25℃ ambient temperature unless otherwise specified.
10
Single phase half
7.0 wave, 60Hz, resistive of inductive load.C ibo
For capacitive5.0
load, derate current by 20%
Marking Code
I C /I B = 10
T J = 25°C
T J = 25°C
30
Dimensions in inches and (millimeters)
1000
100
t d @ V EB(off) = 1.0 V
50
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
C obo FM130-MH FM140-MH
30
V CC = 120 V
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
20
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS 1.0
Voltage
VRMS
14
21
10
28
35
42
56
70
105
140
Volts
40
50
200
Volts
2.0
0.2
0.3
0.7 0.5 1.0
2.0
3.0
5.0 7.0
10
20
20
VDC
V
R , REVERSE VOLTAGE (VOLTS)
Maximum Average Forward Rectified Current
IO
Maximum DC Blocking Voltage
14
40
0.2 0.3 0.5
30
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
5000
Typical Junction Capacitance (Note 1)
3000
Operating Temperature Range
2000
Storage Temperature Range
NOTES:
10
20 30
80
40
120
I C /I B = 10
= 120 V
-55 to +125
TSTG
t, TIME (ns)
500
T J = 25°C
100
50
100
150
200
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
t f @ V CC = 30 V
VF
It R@ V
300
s
@T A=125℃200
5.0
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
t f @ V CC
TJ
60
1000
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
RΘJA
CJ
2.0 3.0
I C , COLLECTOR
CURRENT (mA)
1.0
8. Turn–On Time
30
Figure 7. Capacitances
Figure
1.0
0.50
CC
0.70
0.85
0.5
= 120 V
10
0.9
0.92
Volts
mAmps
100
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
50
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
THRU
MMBT555xLT1
High MOUNT
Voltage
Transistor
FM1200-M+
1.0A SURFACE
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Features
Package outline
SOT-23
• Batch process design, excellent power dissipation offers
SOD-123H
.006(0.15)MIN.
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
.063(1.60)
.047(1.20)
• Low power loss, high efficiency.
drop.
• High current capability, low forward voltage.122(3.10)
• High surge capability.
.106(2.70)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals,
solderable per MIL-STD-750
.080(2.04)
0.031(0.8) Typ.
.083(2.10)
.110(2.80)
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Method 2026
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.008(0.20)
.003(0.08)
.070(1.78)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient
temperature unless otherwise specified.
.004(0.10)MAX.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
.020(0.50)
20
VRRM
.012(0.30)
14
VRMS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
20
13
30
21
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
28
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
IO
1.0
30
Dimensions
in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
10
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
WILLAS
FM120-M+
MMBT555xLT1
THRU
High Voltage
Transistor
FM1200-M+
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Features
• Batch process design, excellent power dissipation offers
Pb Free Product
Package outline
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Device PN Packing 0.146(3.7)
efficiency.
• Low power loss, high
0.130(3.3)
(1)
voltage drop.
• High current capability, low forward
Part Number G
‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability.
Guardring for overvoltage protection.
•Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load.
for any errors or inaccuracies. Data sheet specifications and its information load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amps
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal
Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
- 65 to +175
Storage Temperature
Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Volts
0.9
Maximum Forward
Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmps
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.