WILLAS FM120-M+ MMBD4148T THRU BAS16T SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES better reverse leakage current and thermal resistance. profile surface • Low z Fast Switching Speedmounted application in order to optimize board space. z For• General Low powerPurpose loss, highSwitching efficiency. Applications High current capability, low forward voltage drop. • z High Conductance • High surge capability. z Pb-Free package is available for overvoltage protection. • Guardring RoHS product for packing code suffix ”G” high-speed switching. • Ultra Silicon epitaxial planar chip, metalcode siliconsuffix junction. • Halogen free product for packing “H” • Lead-free parts meet environmental standards of z SOT-523 SOD-123H 0.146(3.7) 0.130(3.3) 1 2 • RoHS product for packing code suffix "G" Marking: Halogen MMBD4148T: KA2, free product for packing code suffix "H" Mechanical data BAS16T:A2 • Epoxy : UL94-V0 rated flame retardant Maximum Ratings @Ta=25℃ • Case : Molded plastic, SOD-123H , • Terminals Parameter :Plated terminals, solderable per MIL-STD-750 Symbol Non-Repetitive Peak Reverse Voltage • Polarity : Indicated by cathode band Peak Repetitive Peak Reverse Position : AnyVoltage • Mounting Working• Peak Reverse Voltage Weight : Approximated 0.011 gram DC Blocking Voltage 0.071(1.8) 0.056(1.4) 3 Moisture Sensitivity/228 Level 1 MIL-STD-19500 Method 2026 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Limit VRM 100 VRRM VRWM VR 75 Unit V Dimensions in inches and (millimeters) V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RMS Reverse Voltage VR(RMS) Ratings at 25℃ ambient temperature unless otherwise specified. Forward Continuous Current IFM Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% IO Average Rectified Output Current Peak Forward Surge RATINGS Current @t=1.0μs Marking Code IFSM VRRM Maximum Recurrent Peak Reverse Voltage Power Dissipation VRMS Maximum RMS Voltage Thermal Junction to Ambient MaximumResistance DC Blocking Voltage VDC Junction MaximumTemperature Average Forward Rectified Current IO IFSM Operating/Storage Temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Electrical Ratings @Ta=25℃ CJ mA 150 mA 14 1.0 40 15 50 16 60 18 80 14 21 28 35 42 56 mW RθJA20 30 40625 50 60 80 K/W 100 Pd Tj TSTG 75 CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ @T A=125℃ Typ -55 to +125 Max 0.715 NOTES: VF2 Capacitance between terminals Reverse recovery time 2012-06 2012-1 120 200 Vo 70 105 140 Vo 150 200 Vo Am ℃ Am ℃ P Conditions -55 to +150 - 65 to +175 V ℃ IR=1μA ℃ IF=1mA 0.855 V VF3 1.0 V 0.5 IF=50mA VF4 1.25 V 10 IF=150mA IR1 1 μA VR=75V R2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. I 2- Thermal Resistance From Junction to Ambient 40 120 115 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 0.50 Reverse current Unit V VF1 VF Maximum Forward Forward voltageVoltage at 1.0A DC -55~+150 10 100 ℃ 1.0 30 VTSTG (BR) 200 150 Min TJ A 13 30 Symbol Reverse breakdown voltage Storage Temperature Range Rated DC Blocking Voltage 300 12 20 RΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range V SYMBOL FM120-MH FM130-MH FM140-MH 2.0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U @ t=1.0s Typical Junction Parameter Capacitance (Note 1) 53 trr 4 IF=10mA 0.70 ns 0.85 0.9 0.92 Vo mA IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148T THRU BAS16T SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Typical Characteristics 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148T THRU BAS16T SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-523 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .035(0.90) .028(0.70) • Epoxy : UL94-V0 rated flame retardant .067(1.70) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750.059(1.50) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .069(1.75) .057(1.45) Mechanical data .004(0.10)MIN. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .014 (0.35 ) .008(0.20) .010(0.25) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS .043(1.10) Marking Code 12 13 14 15 16 .004(0.10) 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM .035(0.90) V VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 1.0 30 40 120 -55 to +125 V A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage .014(0.35) IR .006(0.15) @T A=125℃ NOTES: .035(0.90) .028(0.70) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.92 0.5 10 V m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS SOT-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ MMBD4148T THRU BAS16T FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. Ordering Information: high efficiency. • Low power loss, 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. Device PN Packing • High surge capability. (1) (2) Part Number‐T G ‐WS Tape&Reel: 3 Kpcs/Reel for overvoltage protection. • Guardring Ultra high-speed switching. • Note: (1) Packing code, Reel Packing；CASE: SOD‐323 • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any ***Disclaimer*** • WeightWILLAS reserves the right to make changes without notice to any product : Approximated 0.011 gram specification herein, to make corrections, modifications, enhancements or other MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings atchanges. WILLAS or anyone on its behalf assumes no responsibility or liability 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. for any errors or inaccuracies. Data sheet specifications and its information For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts and do vary in different applications and actual performance may vary over time. 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) ℃/W 40 WILLAS products are not designed, intended or authorized for use in medical, Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 applications where a failure or malfunction of component or circuitry may directly Storage Temperature Range TSTG ℃ or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.