BAV19WS~BAV21WS(SOD 323)

BAV19WS
FM120-M+
BAV20WSTHRU
BAV21WS
FM1200-M+
WILLAS
SOD-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
FeaturesDIODE
FAST SWITCHING
• Batch process design, excellent power dissipation offers
FEATURES
z
z
z
z
z
better reverse leakage current and thermal resistance.
Fast• Low
Switching
Speedmounted application in order to
profile surface
optimize
board
space. Ideally Suited for Automatic
Surface Mount Package
• Low power loss, high efficiency.
For •General
Purpose
Switching
Applications
High current
capability,
low forward
voltage drop.
surge capability.
• Highpackage
Pb-Free
is available
• Guardring for overvoltage protection.
RoHS
product
for packing code suffix ”G”
high-speed switching.
• Ultra
Halogen
free
product
for packing
code
suffix
“H”
epitaxial
planar
chip, metal
silicon
junction.
• Silicon
Lead-free
parts
meet
environmental
standards
of
•
Moisture Sensitivity Level 1
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-323
SOD-123H
Insertion
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Polarity: Color band denotes cathode end
Mechanical data
0.040(1.0)
MARKING:
BAV19WS:
A8
0.024(0.6)
: UL94-V0 rated flame retardant
• Epoxy
BAV20WS:
T2 SOD-123H
: Molded plastic,
• Case
0.031(0.8) Typ.
0.031(0.8) Typ.
,
BAV21WS:
T3
• Terminals :Plated terminals, solderable per MIL-STD-750
Maximum RatingsMethod
and Electrical
Characteristics, Single Diode @Ta=25℃
2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Parameter
Symbol
BAV19WS
BAV20WS
BAV21WS
Unit
• Mounting Position : Any
120
200
250
V
VRM
Non-Repetitive
Reverse Voltage
• WeightPeak
: Approximated
0.011 gram
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
DC
Blocking
Voltage
R
Single
phase half
wave, 60Hz, resistive of inductive V
load.
For
capacitive
load,
derate
current
by
20%
VR(RMS)
RMS Reverse Voltage
RATINGS
IFM
Marking Code
Average
Output
Current
MaximumRectified
Recurrent Peak
Reverse
Voltage
Maximum
RMS Voltage
Peak
Forward
Surge Current @t=1.0ms
250
V
71
106
141
V
IVORRM
12
20
13
30
14
40
VRMS
14
21
VDC
20
30
IFSM
@ t=1.0s
IO
Maximum Average Forward Rectified Current
150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Forward Continuous Current
Maximum DC Blocking Voltage
100
Repetitive Peak Forward Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Power Dissipation
superimposed on rated load (JEDEC method)
Thermal
Resistance
Junction
Typical Thermal
Resistance
(Note 2)to
120
200
V
28
2.535
42
56
70
105
140
V
40
0.550
60
80
100
A 150
200
V
1.0
30
40
120
500
-55 to +125
TSTG
Storage Temperature Range
10
115
100 mA 150
250
TJ
Operating Temperature Range
18
80
IFSM
Pd
CJ
Storage Temperature
16
60
625
RΘJA
TSTG
mA
15
200
50
IFRM
RθJA
Typical Junction Capacitance (Note 1)
Ambient
400
-55~+150
A
mW
℃
℃/W
-55 to +150
A
mA
- 65 to +175
℃
Electrical Ratings
@Ta=25℃
CHARACTERISTICS
Parameter
Maximum Average Reverse Current at @T A=25℃
Symbol
@T A=125℃
Rated DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Forward
voltage
NOTES:
IR
Max
0.70
1.0
VF2
1.25
Reverse
BAV19WS
2- Thermalcurrent
Resistance From Junction to
Ambient
BAV20WS
0.50
Typ
VF1
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Min
Unit
0.5
10
V
0.1
IR
BAV21WS
0.1
μA
0.1
0.92
V
m
IF=0.1A
IF=0.2A
VR=150V
VR=200V
CT
5
pF
Reverse recovery time
trr
50
ns
2012-1
Conditions
VR=100V
Capacitance between terminals
2012-06
0.9
0.85
VR=0V,f=1MHz
IF=IR=30mA
Irr=0.1XIR,RL=100Ω
WILLAS
ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BAV19WS
FM120-M+
BAV20WSTHRU
BAV21WS
FM1200-M+
WILLAS
SOD-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Forward
Characteristics
planar chip,
metal silicon junction.
• Silicon epitaxial
400
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Typical Characteristics BAV19WS
1000
MIL-STD-19500 /228
300
• RoHS product for packing code suffix "G"
(mA)
• Epoxy : UL94-V0 rated flame retardant
30
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
(nA)
REVERSE CURRENT IR
Ta
=2
5℃
Ta=25℃
0.031(0.8) Typ.
10
Dimensions in inches and (millimeters)
1
12
20
13
30
Maximum RMS Voltage
VRMSTa=25℃ 14
21
Maximum DC Blocking Voltage
VDC
20
30
f=1MHz
1.2
1.0
superimposed
on rated load (JEDEC method)
PD
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Peak Forward Surge Current 8.3 ms single half sine-wave
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
0.8
80
Storage Temperature Range
TSTG
CHARACTERISTICS
VR
100
120
(V)
250
15
50
16
18
10
Power Derating Curve
60
80
100
28
35
42
56
40
50
60
80
115
150
120
200
V
70
105
140
V
100
150
200
V
1.0
30
200
40
120
150
A
℃
P
-55 to +150
100
A
- 65 to +175
SYMBOL FM120-MH FM130-MH50FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum
Average Reverse Current at @T A=25℃
0.4
10
@T A=125℃
REVERSE VOLTAGE
300
14
40
-55 to +125
TJ
Operating Temperature Range
60
(mW)
IO
IFSM
Maximum Average Forward Rectified Current
0
5
Rated DC Blocking
Voltage
40
REVERSE VOLTAGE
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Characteristics VRRM
Maximum
Recurrent PeakCapacitance
Reverse Voltage
1.4
0.6
0.031(0.8) Typ.
3
VOLTAGE
(V)
Ratings at 25℃ ambientFORWARD
temperature
unlessVFotherwise
specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
0.040(1.0)
0.024(0.6)
30
0.1
MAXIMUM
AND
ELECTRICAL
CHARACTERISTICS
0.4
0.6 RATINGS
0.8
1.0
1.2
1.4
0
20
Marking Code
Ta=100℃
0.3
POWER DISSIPATION
Method 2026
• Polarity : Indicated by cathode band
• 3Mounting Position : Any
• Weight : Approximated 0.011 gram
1
0.2
0.071(1.8)
0.056(1.4)
Characteristics
100
Mechanical data
Ta
=1
00
℃
FORWARD CURRENT
IF
Halogen free product for packing code suffix "H"
100
10
Reverse
VR
15
(V)
IR
0.50
20
0
0.70
0.9
0.85
0.92
0.5
0
25
50
10 75
AMBIENT TEMPERATURE
V
100
Ta
125
150
m
(℃ )
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
BAV19WS
FM120-M+
THRU
BAV20WS
BAV21WS
FM1200-M+
WILLAS
SOD-323
Diodes-20V- 200V
1.0A SURFACEPlastic-Encapsulate
MOUNT SCHOTTKY BARRIER RECTIFIERS
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOD-323
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.091(2.30)
.010(0.25)
.016(0.40)
Mechanical data
.075(1.90)
.059(1.50)
.045(1.15)
•
.057(1.45)
.106(2.70)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
.047(1.20)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.031(0.80)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
.008(0.20)
.004(0.10)
40
120
-55 to +125
CHARACTERISTICS
Amps
℃/W
PF
℃
- 65 to +175
.016(0.40)
0.50
.010(0.25)
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Amps
-55 to +150
TSTG
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
@T A=125℃
IR
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
NOTES:
.010(0.25)MIN.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.DCORP.
WILLAS ELECTRONIC CORP.
BAV19WS
FM120-M+
BAV20WS
THRU
BAV21WS
FM1200-M+
WILLAS
SOD-323
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Ordering
Information:
mounted application
in order to
• Low profile surface
optimize board space.
Packing 0.146(3.7)
high efficiency.
• Low power loss,Device PN 0.130(3.3)
(1) forward
(2)
current
capability,
low
voltage
drop.
• High Part
Number ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape&Reel Packing
for overvoltage protection.
• Guardring
high-speed switching.
• Ultra(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
/228
MIL-STD-19500
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,
60Hz, resistive of inductive load.
WILLAS reserves the right to make changes without notice to any product For capacitive load, derate current by 20%
specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
for any errors or inaccuracies. Data sheet specifications and its information Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
contained are intended to provide a product description only. "Typical" parameters Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can Amps
Maximum Average
Forward Rectified Current
IO
1.0
Peak Forwardand do vary in different applications and actual performance may vary over time. Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
WILLAS does not assume any liability arising out of the application or ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
use of any product or circuit. PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
life‐saving implant or other applications intended for life‐sustaining or other related Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
applications where a failure or malfunction of component or circuitry may directly 0.5
Maximum Average
Reverse Current at @T A=25℃
IR
mAmp
10
@T A=125℃
Rated DC Blocking
Voltage
or indirectly cause injury or threaten a life without expressed written approval NOTES:
of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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