WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers PNP Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • RoHS product for packing code suffix "G", • High current capability, low forward voltage drop. free product for packing code suffix "H" surge capability. • HighHalogen . Moisture Level 1 overvoltage protection. • Guardring for Sensitivity high-speed switching. • Ultra ORDERING INFORMATION • Silicon epitaxial planar chip, metal silicon junction. Deviceparts meet environmental Marking Shipping standards of • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 MMBT3906LT1 2A suffix "G" 3000/Tape & Reel product for packing code • RoHS SOT– 23 Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy MAXIMUM RATINGS Symbol plastic, SOD-123H • Case : MoldedRating Collector–Emitter Voltage V CEO , • Terminals :Plated terminals, solderable per MIL-STD-750 Collector–Base MethodVoltage 2026 Emitter–Base Voltage Polarity : Indicated by cathode band Collector Current — Continuous Mounting Position : Any • • • Weight : Approximated 0.011 gram THERMAL CHARACTERISTICS Characteristic Value Unit 0.031(0.8) Typ. V CBO V EBO – 40 – 40 – 5.0 Vdc Vdc Vdc IC – 200 mAdc Symbol 0.031(0.8) Typ. 3 COLLECTOR Dimensions in inches1and (millimeters) BASE 2 EMITTER Max Unit 225 mW 1.8 mW/°C 556 °C/W MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Total Device Dissipation FR– 5 Board(1) PD Ratings at 25℃ ambient temperature unless otherwise specified. T A =25 °C Single phase half wave, 60Hz, resistive of inductive load. Derate above 25°C For capacitive load, derate current by 20% θJA RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Total Device Dissipation Marking Code Alumina Substrate, (2) T A = 25°C Maximum Recurrent Peak Reverse Voltage VRRM Derate above 25°C Maximum RMS Voltage Thermal Resistance Junction to Ambient VRMS Maximum DC Junction Blocking and Voltage VDC Storage Temperature Maximum Average Forward Rectified Current IO DEVICE MARKING Peak Forward Surge Current 8.3 ms single half sine-wave IFSM MMBT3906LT1G = 2A superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) PD 12 20 14 R θJA T J20 , T stg 13 30 300 14 40 2.4 28 417 30 –55 to +150 40 21 Operating Temperature Range OFF CHARACTERISTICS Storage Temperature Range TJ (I C CHARACTERISTICS = –1.0 mAdc, I B = 0) Maximum Forward Voltage at 1.0ABreakdown DC Collector–Base Voltage VF Maximum Average Current at0)@T A=25℃ (I CReverse = –10 µAdc, I E= -55 to +125Symbol 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts Amps Amps 40 120 Min ℃/W PF to +150 Max -55 Unit ℃ - 65 to +175 V (BR)CEO 0.50 V (BR)CBO IR (I E = –10 µAdc, I C = 0) Base Cutoff Current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. (V CE = –30 Vdc, V EB = –3.0 Vdc) 2- Thermal Resistance From Junction to Ambient Collector Cutoff Current (V CE = –30 Vdc, V EB = –3.0 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. NOTES: 10 100 ℃ Vdc FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH–FM160-MH 40 — @T Voltage A=125℃ Rated DC Blocking Voltage Emitter–Base Breakdown 18 80 TSTG Collector–Emitter Breakdown Voltage (3) 16 60 1.0 30 noted) ELECTRICAL (T AC=J 25°C unless otherwise Typical Junction CapacitanceCHARACTERISTICS (Note 1) Characteristic mW 15 50 mW/°C 35 °C/W 50°C V (BR)EBO 0.70 0.85 Vdc – 40 0.5 10 — – 5.0 — — – 50 — – 50 0.9 0.92 Volts mAmps Vdc I BL nAdc I CEX nAdc 3. Pulse Width <300 µs; Duty Cycle <2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers ELECTRICAL CHARACTERISTICS (T A = resistance. 25°C unless otherwise noted) (Continued) better reverse leakage current and thermal Characteristic application in order to • Low profile surface mounted Symbol Min SOD-123H Max Unit optimize board space. ON CHARACTERISTICS (2) loss, high • Low power DC Current Gainefficiency. capability, forward voltage drop. • High current (I C = –0.1 mAdc, Vlow CE = –1.0 Vdc) capability. • High surge (I C = –1.0 mAdc, V CE = –1.0 Vdc) • Guardring for overvoltage protection. (I C = –10 mAdc, V CE = –1.0 Vdc) switching. • Ultra high-speed C = –50 mAdc, V CE = –1.0 Vdc) planar chip, metal silicon junction. • Silicon(Iepitaxial (I C = –100 mAdc, V CE = –1.0 Vdc) parts meet environmental standards of • Lead-free 0.146(3.7) 0.130(3.3) hFE Collector–Emitter MIL-STD-19500 /228 Saturation Voltage –– 0.012(0.3) Typ. 60 80 100 60 30 –– –– 300 –– –– –– –– – 0.25 – 0.4 – 0.65 –– – 0.85 – 0.95 0.071(1.8) 0.056(1.4) VCE(sat) Vdc formAdc, packing "G" (I C = –10 I B code = –1.0suffix mAdc) • RoHS product Halogen product forI packing code suffix "H" (I free mAdc, C = –50 B = –5.0 mAdc) Mechanical data Base–Emitter Saturation Voltage V = –1.0retardant mAdc) C = –10 mAdc, Epoxy (I : UL94-V0 ratedI Bflame (I C = –50 mAdc, I B = –5.0 mAdc) Case : Molded plastic, SOD-123H • • , • Terminals :Plated terminals, solderable per MIL-STD-750 Vdc BE(sat) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. SMALL–SIGNAL CHARACTERISTICS Method 2026 Current–Gain — Bandwidth Product fT • Polarity : Indicated by cathode band (I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz) Position : Any • Mounting Output Capacitance • Weight(V: Approximated 0.011 = 0, f gram = 1.0 MHz) CB= –5.0 Vdc, I E Dimensions in inches and (millimeters) Input Capacitance –– –– 4.5 –– 10 2.0 12 C obo C Ratings at 25℃ Input ambient temperature unless otherwise specified. Impedance Single phase half 60Hz, inductive load. (Vwave, Vdc,resistive I C = –1.0ofmAdc, f = 1.0 kHz) CE= –10 For capacitive load, derate current Ratio by 20% Voltage Feedback MHz pF pF ibo MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) 250 h ie kΩ h re X 10 (V CE=RATINGS –10 Vdc, I C = –1.0 mAdc, f =SYMBOL 1.0 kHz)FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 0.1 FM180-MH Small–Signal Current Gain Marking Code 12 13 14 15 h fe 16 18 (V Peak Vdc, IVoltage 10080 CE= –10 C = –1.0 mAdc, f = 1.0 kHz) 20 30 40 50 60 Maximum Recurrent Reverse VRRM Output Admittance 14 21 28 35 * h oe 42 56 Maximum RMS Voltage VRMS (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) 3.0 Maximum DC Blocking Voltage 20 30 40 50 60 80 VDC Noise Figure NF Maximum Average Forward Rectified Current IO 1.0 –– (V CE= –5.0Vdc, I C = –100 µAdc, R S =1.0 kΩ, f =1.0kHz) Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM –4 10 FM1100-MH FM1150-MH FM1200-MH UNIT 10 400 100 70 60 100 —115 150 µmhos 105 120 200 Volts 140 Volts 150 dB 200 Volts Amp 4.0 Amp superimposed on rated load (JEDEC method) SWITCHING CHARACTERISTICS RΘJA (V CC = – 3.0 Vdc, V BE = 0.5 Vdc, td Typical Junction Capacitance (Note 1) CJ Rise TimeRange I C = –10 mAdc, I B1 T=J–1.0 mAdc) -55 to t+125 d Operating Temperature Typical Thermal Resistance (Note 2) Delay Time Storage Temperature StorageRange Time Fall Time — 35 ℃/W PF 35 -55 to +150 ns (V CC = –3.0 Vdc, I TSTG C = –10 mAdc, ts — - 65 to +175 225 I B1 = I B2 = –1.0 mAdc) tf — 75 CHARACTERISTICS ℃ ℃ ns SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward at 1.0A DC <300 µs; Duty Cycle VF <2.0%. 3. PulseVoltage Test: Pulse Width Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 — @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBT3906LT1 THRU General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 3V 3V SOD-123H • Low profile surface mounted application in order to + 9.1 V <1ns optimize board space. 275 • Low power loss,<1high ns efficiency. + 0.5 V 10 k voltage drop. • High current capability, low forward 0 • High0surge capability. • Guardring for overvoltage protection. C S < 4.0 pF* high-speed switching. • Ultra – 10.6 V 300ns 10 < t 1 < 500 µs • Silicon epitaxial DUTYplanar CYCLEchip, = 2% metal silicon junction. DUTY CYCLE = 2% • Lead-free parts meet environmental standards of MIL-STD-19500 /228 10 k 0.012(0.3) Typ. 1N916 t1 C < 4.0 pF* S 0.071(1.8) 0.056(1.4) 10.9 V *Total shunt capacitance of test jig and connectors • RoHS product for packing code suffix "G" Halogen free product code Rise suffix Time "H" Figurefor 1.packing Delay and MechanicalEquivalent data 275 0.146(3.7) 0.130(3.3) Figure 2. Storage and Fall Time Test Circuit Equivalent Test Circuit • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , TRANSIENT CHARACTERISTICS • Terminals :Plated terminals, TYPICAL solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 T = 25°C T J = 125°C • Polarity : Indicated by cathode band • Mounting Position : Any 10.0 • Weight : Approximated 0.011 gram 7.0 Dimensions in inches and (millimeters)J 5000 V CC = 40 V I C / I B = 10 3000 2000 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS C obo Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. C ibo For capacitive load, derate current by 20% 3.0 RATINGS Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 Maximum1.0 DC Blocking Voltage VDC 20 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IO 3.half Capacitance Peak Forward Surge Current 8.3Figure ms single sine-wave IFSM Maximum Average Forward Rectified Current 13 30 200 100 70 14 40 Q T 15 50 16 60 18 80 10 Q100 A 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 100 150 200 Volts 40 50 20 30 40 1.0 REVERSE BIAS (VOLTS) superimposed on rated load (JEDEC method) 500 Typical 300 Junction 200 Capacitance (Note 1) TSTG t r @V CC=3.0V CHARACTERISTICS TIME (ns) VF 20 Maximum Average Reverse Current at @T A=25℃ NOTES: 7 15 V IR @T A=125℃ 40 V 2.0 V 10 t d@V OB=0V 2.0 3.0 5.0 7.0 10 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 60 80 5.0 7.0 10 20 30 50 70 100 200 1.0 I C , COLLECTOR CURRENT (mA) Figure 4. Charge Data 30 Amp Amp 40 120 ℃/W V CC = 40 V I B1 = I B2 -55 to +150 I C /I B = 20 - 65 to +175 100 PF ℃ ℃ 70 20 30 0.50 30 0.70 0.9 0.85 0.5 I C /I B = 10 10 20 0.92 Volts mAm 10 7 5 1 MHZ and applied reverse voltage of 4.0 VDC. 1- Measured at 1.0 50 2.0 3.0 SYMBOL FM120-MH FM130-MH50FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 30 Rated DC Blocking Voltage 300 200 -55 to +125 70 50 TJ Operating Temperature Range 100 Storage Temperature Range 500 t r , FALL TIME (ns) RΘJA I C /I B = 10 CJ Typical Thermal Resistance (Note 2) 1000 700 500 300FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI SYMBOL FM120-MH FM130-MH 2.0 Marking Code Q, CHARGE (pC) CAPACITANCE (pF) 5.0 50 70 100 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Fall Time 200 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE outline TYPICAL AUDIO SMALL–SIGNAL Package CHARACTERISTICS offers • Batch process design, excellent power dissipation NOISE FIGURE VARIATIONS Features better reverse leakage current and thermal resistance. SOD-123H (V CE = – 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) in order to • Low profile surface mounted application optimize board space. 12 14 • 0.146(3.7) f = 1.0 kHz I C =0.130(3.3) 1.0 mA 0.012(0.3) Typ. 12 I C = 0.5 mA MIL-STD-19500 /228 4 RoHS product for packing code suffix "G" Halogen freeRESISTANCE= product for packing SOURCE 500Ω code suffix "H" 2 Mechanical I = 100 µA data C : UL94-V0 rated flame retardant • Epoxy 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 : Molded plastic, SOD-123H • Case , • Terminals :Platedf,terminals, solderable FREQUENCY (kHz) per MIL-STD-750 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) loss, high efficiency. • Low power SOURCE RESISTANCE= 200Ω capability, low forward voltage drop. • High current I = 1.0 mA C 10 • High surge capability. SOURCE RESISTANCE= 200 Ω • Guardring for overvoltage protection. 8 I C = 0.5 mA • Ultra high-speed switching. RESISTANCE =1.0kΩ metal silicon junction. • Silicon epitaxial planar chip,SOURCE 6 I C = 50 µAstandards of • Lead-free parts meet environmental 10 0.071(1.8) 0.056(1.4) 8 6 4 I C = 50 µA 2 I C = 100 µA 0.040(1.0) 0.024(0.6) 0 0.1 0.2 0.4 2.0 4.0 10 20 40 100 0.031(0.8) Typ. R g, SOURCE RESISTANCE (kΩ) Method 2026 Figure 7. Noise Figure Figure 8. Noise Figure h oe , OUTPUT ADMITTANCE ( µmhos) • Polarity : Indicated by cathode band h PARAMETERS • Mounting Position : Any (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) • Weight : Approximated 0.011 gram 300 1.0 0.031(0.8) Typ. Dimensions in inches and (millimeters) 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS h fe, DC CURRENT GAIN Ratings at 25℃ ambient temperature unless otherwise specified. 200 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 100 Maximum Recurrent Peak Reverse Voltage 70 VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 50 IO Maximum Average Forward Rectified Current 30 0.1 0.2 0.3 0.5 20 SYMBOL FM120-MH FM130-MH10FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code 50 1.0 2.0 Peak Forward Surge Current 8.3 ms single half sine-wave 3.0 5.0 13 30 5 21 30 2 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1 10 0.1 IFSM I , COLLECTOR CURRENT (mA) C superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 20 h ie, INPUT IMPEDANCE (kΩ) 10 Storage Temperature Range TSTG CHARACTERISTICS 5.0 VF Maximum 2.0 Average Reverse Current at @T A=25℃ IR @T A=125℃ 1.0 NOTES: 1- Measured 0.5at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.2 0.1 2012-06 2012-11 0.2 0.3 0.5 Amp 5.0 10 Amp 10 ℃/W PF -55 to +150 ℃ - 65 to +175 7.0 ℃ 5.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 40 120 -55 to +125 TJ Operating Temperature Range 0.5 CJ Typical Junction Capacitance (Note 1) 1.0 1.0 2.0 3.0 30 CURRENT (mA) I C , COLLECTOR 0.3 Figure 10. Output Admittance RΘJA h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) Figure 9. Current Gain 0.2 1.0 2.0 3.0 5.0 10 0.50 3.0 0.70 0.9 0.85 0.92 0.5 2.0 Volts mAm 10 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio 10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TYPICAL STATIC dissipation offers CHARACTERISTICS • Batch process design, excellent power better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to h FE , DC CURRENT GAIN (NORMALIZED) optimize board space. 2.0 • Low power loss, high efficiency. T J = +125°C • High current capability, low forward voltage drop. +25°C • High1.0surge capability. • Guardring for overvoltage protection. 0.7 • Ultra high-speed switching. –55°C 0.5 epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) V = 1.0 V 0.012(0.3) Typ. CE 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 0.3 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.2 Mechanical data 0.040(1.0) 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 : Molded plastic, SOD-123H • Case 0.1 0.031(0.8) Typ. , I C , COLLECTOR CURRENT (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 70 MAXIMUM CHARACTERISTICS 30 mA 10 mA I =1.0 mA RATINGS AND ELECTRICAL 100 mA C Ratings at 25℃ ambient temperature unless otherwise specified. Single phase0.6 half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.4 100 200 0.031(0.8) Typ. T J = 25°C RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 0.2 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 200 Volts Maximum DC Blocking Voltage 0 Maximum 0.01 Average Forward 0.02 0.03 Rectified Current 0.05 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO 0.1 0.07 1.2 T J = 25°C Operating Temperature Range 1.0 Storage Temperature Range @V VTSTG V, VOLTAGE ( VOLTS ) BE NOTES: -55 to +1250.5 CE =1.0 V IR @T A=125℃ V CE(sat) @ I C /I B =10 0 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 5.0 10 80 1.0 30 100 2.0 150 3.0 5.0 7.0 Amps 10 Amps 40 120 ℃/W PF -55 to +150 θ VC for V CE(sat) +25°C TO +125°C - 65 to +175 ℃ ℃ 0 –55°C TO +25°C 0.85 0.70 0.5 0.9 0.92 Volts +25°C TO +125°C 10 –1.0 mAmp –55°C TO +25°C θ VB for V BE(sat) –1.5 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2.0 1.0 – 0.5 0.50 0.2 1.0 60 0.7 1.0 VF Maximum Average Reverse Current at @T A=25℃ 0.4 Rated DC Blocking Voltage 50 0.5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.6 0.8 CHARACTERISTICS 40 0.3 I B , BASE CURRENT (mA) IFSM Figure 14. Collector Saturation Region CJ V BE(sat) @ I C /I B =10 TJ Typical Junction Capacitance (Note 1) 30 0.2 RΘJA Typical Thermal Resistance (Note 2) 50 Dimensions in inches and (millimeters) COEFFICIENT (mV/ °C) 30 Figure 13. DC Current Gain Method 2026 • Polarity : Indicated by cathode band Position : Any • Mounting 1.0 • Weight : Approximated 0.011 gram 0.8 20 –2.0 20 50 100 200 0 20 40 60 80 100 120 140 160 180 C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 15. “ON” Voltages Figure 16. Temperature Coefficients 200 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906LT1 General Purpose Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.012(0.3) Typ. .122(3.10) Halogen free product for packing code suffix .106(2.70) "H" .063(1.60) .047(1.20) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .083(2.10) 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .080(2.04) .070(1.78) RATINGS .008(0.20) .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .004(0.10)MAX. RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT .020(0.50) Volts 0.9 0.92 VF 0.50 0.70 0.85 .012(0.30) 0.5 IR 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Dimensions in inches and (millimeters) 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT3906LT1 Purpose FM1200-M+ 1.0A General SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. efficiency. • Low power loss, high Device PN Packing 0.146(3.7) 0.130(3.3) • High current capability, low forward (1) voltage drop. MMBT3906LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 which may be included on WILLAS data sheets and/ or specifications can 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amps Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ life‐saving implant or other applications intended for life‐sustaining or other related -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps such applications do so at their own risk and shall agree to fully indemnify WILLAS 10 @T A=125℃ Rated DC Blocking Voltage Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.