1SS184(SOT 23)

WILLAS
Ultra
High Speed Switching
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Application
Package outline
FM120-M+
1SS184 THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
Featrues
• Guardring for overvoltage protection.
switching.
• Ultra
Lowhigh-speed
forward voltage
: VF (3) = 0.9V (typ.)
epitaxialrecovery
planar chip,
junction.
• Silicon
1.6ns (typ.)
Fast reverse
timemetal
: trr = silicon
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Small total capacitance
: CT = 0.9pF (typ.)
MIL-STD-19500
/228
packing
suffix of
"G"product
• RoHS
We product
declareforthat
the code
material
SOT –23
Halogen free product for packing code suffix "H"
compliance with RoHS requirements.
Mechanical data
RoHS product for packing code suffix "G"
• Epoxy : UL94-V0 rated flame retardant
Halogen free product for packing code suffix "H"
• Case : Molded plastic, SOD-123H
Moisture Sensitivity Level 1
,
• Terminals :Plated terminals, solderable per MIL-STD-750
ANODE0.040(1.0)
0.024(0.6)
1
3
CATHODE
0.031(0.8) Typ.
2
ANODE
Device Marking
Method 2026
• Polarity
: Indicated
by cathode band
1SS184
= B3
• Mounting Position : Any
Maximum Ratings (TA = 25°C)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Characteristic
Symbol
Rating
Unit
Maximum
(peak) reverse
voltage AND ELECTRICAL
VRM
85
V
MAXIMUM
RATINGS
CHARACTERISTICS
Reverse voltage
VR
80
V
Ratings at 25℃ ambient temperature unless otherwise specified.
Maximum (peak) forward current
IFM
300 *
mA
Single phase half wave, 60Hz, resistive of inductive load.
Average forward current
IO
100 *
mA
For capacitive load, derate current by 20%
Surge current (10ms)
IFSM
2*
A
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Power dissipation
P
150
mW
Marking Code
12
13
14
15
16
18
10
115
120
Junction temperature
Tj
125
°C
20
30
40
50
60
80
100
150
200
Maximum Operating/Storage
Recurrent Peak Reverse
Voltage
V
RRM
temperature range
Tstg
-55~+125
°C
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
* : Unit rating. Total rating = Unit rating × 0.7.
Maximum DC Blocking Voltage
20
VDC
30
40
50
Electrical Characteristics (TA = IO25°C)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Test
Characteristic
Symbol
superimposed on rated load (JEDEC method)
IFSM
Circuit
Test Condition
Min
Typ.
60
80
1.0
30
Max
100
150
200
Unit
– RΘJA
IF = 1mA –
0.60
–40
– CJ
IF = 10mA
–
0.72
–120
V
1.20
-55 to +125 –
-55 to +150
– TJ
IF = 100mA
0.90
- 65
– TSTG
VR = 30V
–
–
0.1to +175
µA
–
VR = 80V
–
–
0.5
FM150-MH
–SYMBOL FM120-MH
VR = 0, f =FM130-MH
1MHz FM140-MH
–
0.9 FM160-MH
3.0 FM180-MH
pF FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum Forward
at 1.0A
0.92
– VF
IF = 10mA (Fig.1)0.50 –
1.6 0.70 4.0
ns 0.85
ReverseVoltage
recovery
timeDC
trr
0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
0.031(0.8) Typ.
VF (1)
Forward
voltage (Note 1) VF (2)
Typical Junction
Capacitance
VF (3)
Operating Temperature Range
IR (1)
Storage Temperature Range
Reverse current
IR (2)
CHARACTERISTICS CT
Total capacitance
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2011-05
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
Ultra
High
Speed
Switching
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Application
Package outline
THRU
1SS184
FM1200-M+
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Electrical
characteristic
in order to
• Low profile surface mounted application
SOD-123H
curves
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
•
0.146(3.7)
0.130(3.3)
10
Ta=100
1
100n
Mechanical data
50
25
10n
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0
0.2
0.4
0.6
0.8
1.0
1.2
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1n
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0
20
Method 2026
40
0.031(0.8) Typ.
60
80
Fig.2 REVERSE VOLTAGE V R(V)
Fig.1 FORWARD VOLTAGE V F(V)
1.6
0.071(1.8)
0.056(1.4)
75
25
-25
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
Dimensions in inches and (millimeters)
50
f=1MHz
Ta=25
Ta=25
Fig.5
30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
1.2
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.8
RATINGS
5
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
10
Maximum Recurrent Peak Reverse Voltage
0.4
Maximum RMS Voltage
VRRM
12
20
13
30
VRMS
14
21
Maximum DC Blocking Voltage
0
Maximum Average
0.3 Forward Rectified
1
3Current 10
VDC
20
30
30 IO 100
Peak Forward SurgeFig.3
Current REVERSE
8.3 ms single half
sine-wave V R (V)
VOLTAGE
IFSM
3
14
40
15
50
16
60
18
80
10
100
115
150
120
200
1 28
35
42
56
70
105
140
60
80
100
150
200
0.5
40
CJ
Operating Temperature Range
TJ
Storage Temperature Range
0
0.01 F DUT
INPUT
CHARACTERISTICS
VF
-6V
NOTES:
40
120
OUTPUT
WAVEFORM
-55 to +150
-55 to +125
- 65 to +175
TSTG
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
10
30 50
1.0 3
FORWARD
30 CURRENT I F (mA)
IF=10mA
OUTPUT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
1
RΘJA
Typical Junction Capacitance (Note 1)
0.3
Fig.4
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
50
0.1
@T A=125℃
E
50ns
1- Measured
at 1GENERATOR
MHZ and applied reverse voltage of 4.0 VDC.
PULSE
(R OUT
=50 ) From Junction to Ambient
2- Thermal
Resistance
IR
OSCILLOSCOPE
(R IN =50 )
0.500
0.70
0.85
0.9
0.92
0.5
10
IR
0.1I R
trr
Fig.5 Reverse recovery time (t rr ) test circuit
2012-06
2011-05
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
1SS184 THRU
FM1200-M+
Ultra
High Speed Switching
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Application
Package outline
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Outline Drawing
SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
.122(3.10)
.063(1.60)
.047(1.20)
0.012(0.3) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H .106(2.70)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
13
30
14
40
15
50
16
60
18
80
115
VRRM
12
20
10
Maximum Recurrent Peak Reverse Voltage
120
200
Vo
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
VDC
20
30
40
50
60
80
200
Vo
.080(2.04)
Maximum DC Blocking Voltage
.070(1.78)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
IO
IFSM
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
0.50
0.70
℃
.020(0.50)
.012(0.30)
0.85
0.9
0.92
0.5
IR
2- Thermal Resistance From Junction to Ambient
.003(0.08)
100
150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
TSTG
.004(0.10)MAX.
CHARACTERISTICS
.008(0.20)
100
150
1.0
30
Vo
mA
10
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP.
Rev.D
2011-05
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
Ultra
High
Speed
Switching
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Application
Package outline
THRU
1SS184
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profileInformation:
Ordering
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
1SS184‐T
G
‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape&Reel Packing
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitiveWILLAS reserves the right to make changes without notice to any product load, derate current by 20%
***Disclaimer*** specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
12
13
14
15
16
18
10
115
120
changes. WILLAS or anyone on its behalf assumes no responsibility or liability 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
for any errors or inaccuracies. Data sheet specifications and its information 14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
contained are intended to provide a product description only. "Typical" parameters Maximum Average Forward Rectified Current
IO
1.0
which may be included on WILLAS data sheets and/ or specifications can Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
and do vary in different applications and actual performance may vary over time. superimposed on rated load (JEDEC method)
40
Typical WILLAS does not assume any liability arising out of the application or Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
use of any product or circuit. -55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
life‐saving implant or other applications intended for life‐sustaining or other related 0.5
Maximum Average Reverse Current at @T A=25℃
IR
applications where a failure or malfunction of component or circuitry may directly 10
@T A=125℃
Rated DC Blocking Voltage
or indirectly cause injury or threaten a life without expressed written approval NOTES:
of WILLAS. Customers using or selling WILLAS components for use in 1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal
Resistance
From Junction to Ambient
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code
2012-06
2011-05
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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