WILLAS Ultra High Speed Switching 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Application Package outline FM120-M+ 1SS184 THRU FM1200-M+ Pb Free Product Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Featrues • Guardring for overvoltage protection. switching. • Ultra Lowhigh-speed forward voltage : VF (3) = 0.9V (typ.) epitaxialrecovery planar chip, junction. • Silicon 1.6ns (typ.) Fast reverse timemetal : trr = silicon • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Small total capacitance : CT = 0.9pF (typ.) MIL-STD-19500 /228 packing suffix of "G"product • RoHS We product declareforthat the code material SOT –23 Halogen free product for packing code suffix "H" compliance with RoHS requirements. Mechanical data RoHS product for packing code suffix "G" • Epoxy : UL94-V0 rated flame retardant Halogen free product for packing code suffix "H" • Case : Molded plastic, SOD-123H Moisture Sensitivity Level 1 , • Terminals :Plated terminals, solderable per MIL-STD-750 ANODE0.040(1.0) 0.024(0.6) 1 3 CATHODE 0.031(0.8) Typ. 2 ANODE Device Marking Method 2026 • Polarity : Indicated by cathode band 1SS184 = B3 • Mounting Position : Any Maximum Ratings (TA = 25°C) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage AND ELECTRICAL VRM 85 V MAXIMUM RATINGS CHARACTERISTICS Reverse voltage VR 80 V Ratings at 25℃ ambient temperature unless otherwise specified. Maximum (peak) forward current IFM 300 * mA Single phase half wave, 60Hz, resistive of inductive load. Average forward current IO 100 * mA For capacitive load, derate current by 20% Surge current (10ms) IFSM 2* A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Power dissipation P 150 mW Marking Code 12 13 14 15 16 18 10 115 120 Junction temperature Tj 125 °C 20 30 40 50 60 80 100 150 200 Maximum Operating/Storage Recurrent Peak Reverse Voltage V RRM temperature range Tstg -55~+125 °C 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS * : Unit rating. Total rating = Unit rating × 0.7. Maximum DC Blocking Voltage 20 VDC 30 40 50 Electrical Characteristics (TA = IO25°C) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Test Characteristic Symbol superimposed on rated load (JEDEC method) IFSM Circuit Test Condition Min Typ. 60 80 1.0 30 Max 100 150 200 Unit – RΘJA IF = 1mA – 0.60 –40 – CJ IF = 10mA – 0.72 –120 V 1.20 -55 to +125 – -55 to +150 – TJ IF = 100mA 0.90 - 65 – TSTG VR = 30V – – 0.1to +175 µA – VR = 80V – – 0.5 FM150-MH –SYMBOL FM120-MH VR = 0, f =FM130-MH 1MHz FM140-MH – 0.9 FM160-MH 3.0 FM180-MH pF FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward at 1.0A 0.92 – VF IF = 10mA (Fig.1)0.50 – 1.6 0.70 4.0 ns 0.85 ReverseVoltage recovery timeDC trr 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) 0.031(0.8) Typ. VF (1) Forward voltage (Note 1) VF (2) Typical Junction Capacitance VF (3) Operating Temperature Range IR (1) Storage Temperature Range Reverse current IR (2) CHARACTERISTICS CT Total capacitance NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2011-05 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ Ultra High Speed Switching 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Application Package outline THRU 1SS184 FM1200-M+ Pb Free Produc Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Electrical characteristic in order to • Low profile surface mounted application SOD-123H curves optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) 10 Ta=100 1 100n Mechanical data 50 25 10n • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0 0.2 0.4 0.6 0.8 1.0 1.2 , • Terminals :Plated terminals, solderable per MIL-STD-750 1n 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0 20 Method 2026 40 0.031(0.8) Typ. 60 80 Fig.2 REVERSE VOLTAGE V R(V) Fig.1 FORWARD VOLTAGE V F(V) 1.6 0.071(1.8) 0.056(1.4) 75 25 -25 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.012(0.3) Typ. Dimensions in inches and (millimeters) 50 f=1MHz Ta=25 Ta=25 Fig.5 30 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 1.2 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.8 RATINGS 5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 10 Maximum Recurrent Peak Reverse Voltage 0.4 Maximum RMS Voltage VRRM 12 20 13 30 VRMS 14 21 Maximum DC Blocking Voltage 0 Maximum Average 0.3 Forward Rectified 1 3Current 10 VDC 20 30 30 IO 100 Peak Forward SurgeFig.3 Current REVERSE 8.3 ms single half sine-wave V R (V) VOLTAGE IFSM 3 14 40 15 50 16 60 18 80 10 100 115 150 120 200 1 28 35 42 56 70 105 140 60 80 100 150 200 0.5 40 CJ Operating Temperature Range TJ Storage Temperature Range 0 0.01 F DUT INPUT CHARACTERISTICS VF -6V NOTES: 40 120 OUTPUT WAVEFORM -55 to +150 -55 to +125 - 65 to +175 TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 10 30 50 1.0 3 FORWARD 30 CURRENT I F (mA) IF=10mA OUTPUT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 1 RΘJA Typical Junction Capacitance (Note 1) 0.3 Fig.4 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 50 0.1 @T A=125℃ E 50ns 1- Measured at 1GENERATOR MHZ and applied reverse voltage of 4.0 VDC. PULSE (R OUT =50 ) From Junction to Ambient 2- Thermal Resistance IR OSCILLOSCOPE (R IN =50 ) 0.500 0.70 0.85 0.9 0.92 0.5 10 IR 0.1I R trr Fig.5 Reverse recovery time (t rr ) test circuit 2012-06 2011-05 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1SS184 THRU FM1200-M+ Ultra High Speed Switching 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Application Package outline Pb Free Product Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Outline Drawing SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data .122(3.10) .063(1.60) .047(1.20) 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H .106(2.70) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 13 30 14 40 15 50 16 60 18 80 115 VRRM 12 20 10 Maximum Recurrent Peak Reverse Voltage 120 200 Vo Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo VDC 20 30 40 50 60 80 200 Vo .080(2.04) Maximum DC Blocking Voltage .070(1.78) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range IO IFSM VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 0.50 0.70 ℃ .020(0.50) .012(0.30) 0.85 0.9 0.92 0.5 IR 2- Thermal Resistance From Junction to Ambient .003(0.08) 100 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage TSTG .004(0.10)MAX. CHARACTERISTICS .008(0.20) 100 150 1.0 30 Vo mA 10 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) Dimensions in inches and (millimeters) 2012-06 WILLAS ELECTRONIC CORP. Rev.D 2011-05 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ Ultra High Speed Switching 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Application Package outline THRU 1SS184 FM1200-M+ Pb Free Product Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profileInformation: Ordering optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) (2) 1SS184‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape&Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitiveWILLAS reserves the right to make changes without notice to any product load, derate current by 20% ***Disclaimer*** specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS 12 13 14 15 16 18 10 115 120 changes. WILLAS or anyone on its behalf assumes no responsibility or liability 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM for any errors or inaccuracies. Data sheet specifications and its information 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC contained are intended to provide a product description only. "Typical" parameters Maximum Average Forward Rectified Current IO 1.0 which may be included on WILLAS data sheets and/ or specifications can Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM and do vary in different applications and actual performance may vary over time. superimposed on rated load (JEDEC method) 40 Typical WILLAS does not assume any liability arising out of the application or Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ use of any product or circuit. -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 life‐saving implant or other applications intended for life‐sustaining or other related 0.5 Maximum Average Reverse Current at @T A=25℃ IR applications where a failure or malfunction of component or circuitry may directly 10 @T A=125℃ Rated DC Blocking Voltage or indirectly cause injury or threaten a life without expressed written approval NOTES: of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. Marking Code 2012-06 2011-05 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.