BF 660W PNP Silicon RF Transistor • For VHF oscillator applications Type Marking Ordering Code Pin Configuration BF 660W LEs 1=B Q62702-F1568 Package 2=E 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 30 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 4 Collector current IC 25 Base current IB 5 Total power dissipation Ptot TS ≤ 93 °C Values Unit V mA mW 280 Junction temperature Tj Storage temperature Tstg 150 °C - 65 ... + 150 Thermal Resistance Junction - soldering point RthJS Semiconductor Group 1 205 K/W Aug-14-1996 BF 660W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base breakdown voltage - 40 - - 4 - - ICBO VCB = 20 , IE = 0 DC current gain - V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current 30 V(BR)CBO IC = 10 µA, IE = 0 Base-emitter breakdown voltage V nA - - 50 hFE IC = 3 mA, VCE = 10 V 30 - - AC Characteristics Transition frequency fT IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance - pF - 0.4 - - 0.15 - Cce VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Semiconductor Group 700 Ccb VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance MHz 2 Aug-14-1996 BF 660W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 3 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 0 10 s 10 \undefined &SYMBOL.TP Aug-14-1996 BF 660W Transition frequency fT = f (IC) f = 100MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz VCE = 10V Package Semiconductor Group 4 Aug-14-1996