IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor • N-Channel Product Summary VDS 100 V • Enhancement mode RDS(on) 16 mΩ • Logic Level ID 70 A Feature • 175°C operating temperature P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 • Avalanche rated 2 • dv/dt rated • Green Package (lead free) 1 23 P-TO220-3-1 Type IPP70N10SL-16 Package PG-TO220-3-1 Ordering Code SP0002-25708 Marking IPB70N10SL-16 PG-TO263-3-2 SP0002-25700 N10L16 IPI70N10SL-16 PG-TO262-3-1 SP000225705 N10L-16 N10L16 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 70 TC=100°C ID puls 50 280 EAS 700 EAR 25 dv/dt 6 Gate source voltage VGS V Power dissipation Ptot ±20 250 -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse mJ ID =70 A , VDD=25V, RGS =25Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS =70A, VDS =0V, di/dt=200A/µs W TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient, leaded RthJA - - 62.5 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 1) - - 40 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =2mA Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.1 1 VDS =100V, VGS =0V, Tj =150°C IGSS - 10 100 100 nA RDS(on) - 14 25 mΩ RDS(on) - 10 16 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID =50A Drain-source on-state resistance VGS =10V, ID =50A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol gfs Conditions VDS ≥2*ID *RDS(on)max, Values Unit min. typ. max. 30 65 - S pF ID =50A Input capacitance Ciss VGS =0V, VDS =25V, - 3630 4540 Output capacitance Coss f=1MHz - 640 800 Reverse transfer capacitance Crss - 345 430 Turn-on delay time td(on) VDD =50V, VGS=4.5V, - 70 105 Rise time tr ID =70A, RG=1.3Ω - 250 375 Turn-off delay time td(off) - 250 375 Fall time tf - 95 145 Gate Charge Characteristics Gate to source charge Qgs - 10 15 Gate to drain charge Qgd - 34 51 Gate charge total Qg - 160 240 V(plateau) VDD =80V, ID=70A - 3.22 - V IS - - 70 A - - 280 VDD =80V, ID=70A VDD =80V, ID=70A, ns nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time VSD trr VGS =0V, IF =140A - 1.2 1.8 V VR =50V, IF =lS , - 100 150 ns Reverse recovery charge Qrr diF /dt=100A/µs - 600 900 nC Page 3 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V 280 SPP70N10L SPP70N10L 75 W A 220 60 200 55 50 180 ID Ptot 240 160 45 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 0 20 40 60 80 100 0 0 160 °C 190 120 140 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 3 SPP70N10L 10 1 SPP70N10L K/W A ZthJC 10 0 2 ID 10 tp = 18.0µs /I D 100 µs 10 -1 =V DS 10 -2 0.20 DS (on ) 1 R 10 D = 0.50 10 -3 1 ms 0.10 0.05 0.02 10 ms 10 -4 single pulse 10 -5 -7 10 10 0.01 DC 10 0 10 -1 10 0 10 1 10 2 V 10 3 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj =25°C RDS(on) = f (ID) parameter: tp = 80 µs parameter: VGS 170 SPP70N10L 80 Ptot = 250W SPP70N10L b A VGS [V] a e 140 ID 120 80 3.0 c 3.5 d d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 c 60 d 2.5 b 100 c mΩ R DS(on) ki l j hg f 60 50 40 30 20 40 e f g h i k l j b 10 V GS [V] = 20 b 3.0 a 0 0 1 2 3 V 4 0 0 5.5 c 3.5 20 d 4.0 e 4.5 f 5.0 40 g 5.5 h 6.0 60 i 6.5 80 j 7.0 100 k l 8.0 10.0 A 130 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS ≥ 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID); Tj =25°C parameter: gfs 60 70 A S 60 50 55 45 g fs ID 50 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 10 20 30 40 A 55 ID VGS Page 5 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 50 A, VGS = 4.5 V parameter: VGS = VDS , ID = 2 mA 110 SPP70N10L 3 V mΩ 2.4 80 VGS(th) R DS(on) 90 70 2.2 2 1.8 60 1.6 50 1.4 1.2 40 98% 30 0.8 typ 0.6 20 typ 0.4 10 0 -60 max 1 min 0.2 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 140 Tj °C 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS ) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 200 Tj 4 10 3 SPP70N10L A Ciss pF C IF 10 2 10 3 Coss 10 1 T j = 25 °C typ Crss T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 0 5 10 15 20 25 30 V 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj) VGS = f (QGate ) par.: ID = 70 A , VDD = 25 V, RGS = 25 Ω parameter: ID = 70 A pulsed 16 700 SPP70N10L mJ V 600 550 12 VGS EAS 500 450 10 0,2 VDS max 400 0,8 VDS max 8 350 300 6 250 200 4 150 100 2 50 0 25 45 65 85 105 125 145 °C Tj 185 0 0 40 80 120 160 200 nC 280 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP70N10L 120 V(BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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