2SD1898(SOT 89)

WILLAS
2SD1898
SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT-89
FEATURES
z High Breakdown Voltage and Current
z Excellent DC Current Gain Linearity
z Pb-Free package is available
1. BASE
2. COLLECTOR
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
z
Low Collector-Emitter Saturation Voltage
z
Moisture Sensitivity Level 1
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
Parameter
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
=
IC=50µA,IE 0
V(BR)CBO
100
V
Collector-emitter breakdown voltage
=
IC=1mA,IB 0
V(BR)CEO
80
V
Emitter-base breakdown voltage
=
IE=50µA,IC 0
V(BR)EBO
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
=
VCB=80V,IE 0
ICBO
=
VEB=4V,IC 0
IEBO
hFE
=
VCE=3V, IC 500mA
82
fT
Cob
µA
1
µA
390
IC=500mA,IB=20mA
VCE(sat)
1
0.4
V
VCE=10V,IC=50mA, f=100MHz
100
MHz
VCB=10V, IE=0, f=1MHz
20
pF
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82–180
120–270
180–390
MARKING
2012-0
DF
WILLAS ELECTRONIC CORP.
WILLAS
2SD1898
SOT-89 Plastic-Encapsulate Transistors
Typical Characteristics
Static Characteristic
4.5mA
COLLECTOR CURRENT
COMMON
EMITTER
Ta=25℃
2.5mA
5mA
VCE= 3V
2mA
1.5mA
400
1.0mA
400
300
o
200
Ta=25 C
200
100
IB=0.5mA
0
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE
6
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Ta=25℃
600
400
VCEsat ——
400
β=25
800
10
COLLECTOR CURRENT
(V)
VBEsat —— IC
1000
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
o
Ta=100 C
DC CURRENT GAIN
600
hFE —— IC
500
hFE
4mA 3.5mA 3mA
IC
(mA)
800
Ta=100℃
100
IC
1000
(mA)
IC
β=25
300
200
Ta=100℃
100
200
Ta=25℃
0
0.1
1
10
100
COLLECTOR CURRENT
fT
——
1000
(mA)
IC
1000
10
100
Cob / Cib
——
IC
1000
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
250
C
200
CAPACITANCE
TRANSITION FREQUENCY
1
COLLECTOR CURRENT
fT
(MHz)
300
200
IC
0
0.1
150
100
Cib
10
Cob
100
VCE=10V
o
Ta=25 C
50
0
20
40
60
80
COLLECTOR CURRENT
Pc
COLLECTOR POWER DISSIPATION
Pc (W)
600
——
IC
100
1
0.1
1
REVERSE VOLTAGE
(mA)
10
V
(V)
Ta
500
400
300
200
100
0
0
25
50
75
AMBIENT TEMPERATURE
2012-0
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS
2SD1898
SOT-89 Plastic-Encapsulate Transistors
Outline Drawing
SOT-89
.181(4.60)
.173(4.39)
.063(1.60)
.055(1.40)
.061REF
(1.55)REF
.102(2.60)
.091(2.30)
.167(4.25)
.154(3.91)
.023(0.58)
.016(0.40)
.047(1.2)
.031(0.8)
.060TYP
(1.50)TYP
.197(0.52)
.013(0.32)
.017(0.44)
.014(0.35)
.118TYP
(3.0)TYP
Dimensions in inches and (millimeters)
Rev.C
2012-0
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SD1898THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Pb Free Product
Package outline
SOD-123H
0.146(3.7)
Ordering
power loss, Information:
high efficiency.
• Low
0.130(3.3)
0.012(0.3) Typ.
low forward voltage drop.
• High current capability,
Device PN Packing • High surge capability.
(3)
(1) (2)
2SD1898 x
–SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage
protection.
• Guardring
0.071(1.8)
high-speed
switching.
• Ultra
Note: (1) CASE:SOT‐89 0.056(1.4)
• Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
product
(3) CLASSIFICATION OF h
RANK for packing code suffixFE "G"
• RoHS
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient
temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
For capacitivespecification herein, to make corrections, modifications, enhancements or other load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
Volts
14
21
28
35
42
56
70
105
140
Maximum RMScontained are intended to provide a product description only. "Typical" parameters Voltage
VRMS
Volts
Maximum DC Blocking
Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can Amps
Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermaluse of any product or circuit. Resistance (Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature
Range
TSTG
℃
Marking Code
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
applications where a failure or malfunction of component or circuitry may directly Volts
0.9
Maximum Forward
Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
or indirectly cause injury or threaten a life without expressed written approval mAmps
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
1- Measured at 1such applications do so at their own risk and shall agree to fully indemnify WILLAS MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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