WILLAS FM120-M 2SB766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TRANSISTORoptimize (PNP) board space. FEATURES • Low power loss, high efficiency. capability, low forward • High current z Large collector power dissipation PC voltage drop. • High surge capability. z Pb-Free• Guardring package for is overvoltage available protection. RoHS product for packing code suffix ”G” • Ultra high-speed switching. Silicon epitaxial planar chip, code metal suffix silicon “H” junction. • Halogen free product for packing • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) SOT-89 MoistureMIL-STD-19500 Sensitivity Level /228 1 z 0.012(0.3) Typ. • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 1. BASE Mechanical data unless otherwise noted) MAXIMUM RATINGS (Ta=25℃ • Epoxy : UL94-V0 rated flame retardant Symbol Parameter Value Unit plastic, SOD-123H • Case : Molded , Voltage V VCBO •Collector-Base Terminals :Plated terminals, solderable -30 per MIL-STD-750 •Emitter-Base Polarity : Indicated by cathode band Voltage Mounting Position : Any •Collector Current -Continuous • Weight : Approximated 0.011 gram VEBO IC Collector Power Dissipation PC 2. COLLECTOR 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry Method 2026 Collector-Emitter Voltage VCEO 0.040(1.0) 0.024(0.6) -25 V -5 V -1 A 500 mW 3. EMITTER Dimensions in inches and (millimeters) Junction Temperature 150 MAXIMUM RATINGS AND ELECTRICAL ℃ CHARACTERISTICS TJ RATINGS Parameter Marking Code im Ratings Storage at 25℃ ambient temperature unless otherwise specified. Temperature -55~150 ℃ Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise For capacitive Tstg specified) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 V(BR)CBO Collector-base breakdown voltage Maximum DC Blocking Voltage Collector-emitter breakdown voltage 70 60 -25 80 100 VRMS 14 IC =-10μA, IE=0 35 20 IB 0 30 = IC =-2mA, V(BR)CEO VDC 40 50 Maximum Average Forward Rectified Current 56 VRRM 28 Emitter-base breakdown voltage 42 Min 16 21 Maximum RMS Voltage Max 10 15 50 Pr el Maximum Recurrent Peak Reverse Voltage Typ 18 Test conditions 12 13 14 20 30 40 Symbol 60 -30 IO 1.0 RΘJA Typical Thermal Resistance (Note 2) = VEB=-4V, IC 0 IEBO CJ Typical Junction Capacitance (Note 1) to +125 TJVCE=-10V, IC -55 hFE(1) = -500mA Operating Temperature Range DC current Storagegain Temperature Range hFE(2) CHARACTERISTICS 85 - 65 to +175 TSTG VCE=-5V, = IC -1A 120 200 105 140 V150 200 V -0.1 μA -0.1 μA -55340 to +150 50 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 IC=-500mA, IB -50mA VCE(sat)= Collector-emitter saturation voltage VF Maximum Forward Voltage at 1.0A DC 0.50 0.70 Maximumsaturation Average Reverse Current at @T A=25℃ VBE(sat)= Base-emitter voltage IRIC=-500mA, IB -50mA Rated DC Blocking Voltage 40 120 150 V 30 IFSM VCB=-20V, IE 0 ICBO Collector cut-off current superimposed on rated load (JEDEC method) = Emitter cut-off current 100 -5 V(BR)EBO IE=-10μA, IC=0 Peak Forward Surge Current 8.3 ms single half sine-wave 80 Unit 115 @T A=125℃ fT Transition frequency NOTES: VCE=-10V, IC=-50mA, f=200MHz 1- Measured 1 MHZ and applied reverse voltage ofC 4.0 Collector outputatcapacitance ob VDC. VCB=-10V, IE=0, f=1MHz -0.2 -0.4 V -1.2 V 0.85 0.5 -0.85 10 200 0.9 0.92 MHz 20 30 pF 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE(1) Rank Range Marking 2012-06 2012-0 Q R S 85-170 120-240 170-340 AQ AR AS WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M 2SB766 THRU FM1200- SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Pro SOD-123+ PACKAGE Package outline Features Outline Drawing SOT-89 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 code suffix "G" • RoHS product for packing .181(4.60) Halogen free product for packing code suffix "H" Mechanical data.173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .061REF • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. ina ry 0.031(0.8) Typ. .055(1.40) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .154(3.91) RATINGS Marking Code im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .167(4.25) For capacitive load, derate current by 20% .102(2.60) .091(2.30) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 SYMBOL FM120-MH FM130-MH 12 20 13 30 VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current .047(1.2) IO IFSM Pr el .023(0.58) VRRM .016(0.40) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) .060TYP Operating Temperature Range (1.50)TYP Storage Temperature Range .118TYP (3.0)TYP Maximum Forward Voltage at 1.0A DC CHARACTERISTICS CJ 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 TJ -55 to +125 .197(0.52) TSTG .013(0.32) -55 to +150 - 65 to +175 .017(0.44) .014(0.35) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 @T A=125℃ 0.50 0.70 0.85 0.9 0.9 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) Rev.C 2012-06 2012-0 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS FM120-M 2SB766 THRU FM1200-M SOT-89 Transistors 1.0APlastic-Encapsulate SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing capability, low forward voltage drop. • High current (3) capability. • High surge 2SB766 x –SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) CASE:SOT‐89 high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. • (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 FE RANK (3) MIL-STD-19500 CLASSIFICATION OF h • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% Pr el changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120 RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM contained are intended to provide a product description only. "Typical" parameters 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current and do vary in different applications and actual performance may vary over time. IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 TJ WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range Storage Temperature Range TSTG -55 to +150 - 65 to +175 life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200 applications where a failure or malfunction of component or circuitry may directly 0.9 Maximum Forward Voltage at 1.0A DC 0.9 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP.