2SB766(SOT 89)

WILLAS
FM120-M
2SB766 THRU
FM1200-M
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Prod
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
TRANSISTORoptimize
(PNP) board space.
FEATURES • Low power loss, high efficiency.
capability,
low forward
• High current
z
Large collector
power
dissipation
PC voltage drop.
• High surge capability.
z
Pb-Free• Guardring
package for
is overvoltage
available protection.
RoHS product
for
packing
code suffix ”G”
• Ultra high-speed switching.
Silicon
epitaxial
planar
chip, code
metal suffix
silicon “H”
junction.
•
Halogen free product for packing
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
SOT-89
MoistureMIL-STD-19500
Sensitivity Level
/228 1
z
0.012(0.3) Typ.
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
1. BASE
Mechanical
data
unless otherwise noted)
MAXIMUM RATINGS
(Ta=25℃
• Epoxy : UL94-V0 rated flame retardant
Symbol
Parameter
Value
Unit
plastic, SOD-123H
• Case : Molded
,
Voltage
V
VCBO
•Collector-Base
Terminals :Plated
terminals, solderable -30
per MIL-STD-750
•Emitter-Base
Polarity : Indicated
by cathode band
Voltage
Mounting Position : Any
•Collector
Current -Continuous
• Weight : Approximated 0.011 gram
VEBO
IC
Collector Power Dissipation
PC
2. COLLECTOR
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
Method
2026
Collector-Emitter
Voltage
VCEO
0.040(1.0)
0.024(0.6)
-25
V
-5
V
-1
A
500
mW
3. EMITTER
Dimensions in inches and (millimeters)
Junction
Temperature
150
MAXIMUM
RATINGS AND ELECTRICAL
℃ CHARACTERISTICS
TJ
RATINGS
Parameter
Marking
Code
im
Ratings Storage
at 25℃ ambient
temperature unless otherwise
specified.
Temperature
-55~150
℃
Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
ELECTRICAL
CHARACTERISTICS
(Ta=25℃ unless otherwise
For capacitive
Tstg
specified)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
V(BR)CBO
Collector-base breakdown voltage
Maximum DC Blocking
Voltage
Collector-emitter
breakdown
voltage
70
60
-25
80
100
VRMS
14
IC =-10μA, IE=0
35
20 IB 0 30
=
IC =-2mA,
V(BR)CEO VDC
40
50
Maximum Average Forward Rectified Current
56
VRRM
28
Emitter-base
breakdown voltage
42
Min
16
21
Maximum RMS Voltage
Max
10
15
50
Pr
el
Maximum Recurrent Peak Reverse Voltage
Typ
18
Test conditions
12
13
14
20
30
40
Symbol
60
-30
IO
1.0
RΘJA
Typical Thermal Resistance (Note 2)
=
VEB=-4V, IC 0
IEBO
CJ
Typical Junction Capacitance (Note 1)
to +125
TJVCE=-10V, IC -55
hFE(1) =
-500mA
Operating Temperature Range
DC current
Storagegain
Temperature Range
hFE(2)
CHARACTERISTICS
85
- 65 to +175
TSTG
VCE=-5V,
=
IC -1A
120
200
105
140
V150
200
V
-0.1
μA
-0.1
μA
-55340
to +150
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
IC=-500mA, IB -50mA
VCE(sat)=
Collector-emitter saturation voltage
VF
Maximum Forward Voltage at 1.0A DC
0.50
0.70
Maximumsaturation
Average Reverse
Current at @T A=25℃
VBE(sat)=
Base-emitter
voltage
IRIC=-500mA, IB -50mA
Rated DC Blocking Voltage
40
120
150
V
30
IFSM
VCB=-20V, IE 0
ICBO
Collector
cut-off current
superimposed
on rated load (JEDEC method) =
Emitter cut-off current
100
-5 V(BR)EBO IE=-10μA, IC=0
Peak Forward Surge Current 8.3 ms single half sine-wave
80
Unit
115
@T A=125℃
fT
Transition
frequency
NOTES:
VCE=-10V, IC=-50mA, f=200MHz
1- Measured
1 MHZ and applied reverse voltage ofC
4.0
Collector
outputatcapacitance
ob VDC. VCB=-10V, IE=0, f=1MHz
-0.2
-0.4
V
-1.2
V
0.85
0.5 -0.85
10
200
0.9
0.92
MHz
20
30
pF
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION
OF hFE(1)
Rank
Range
Marking
2012-06
2012-0
Q
R
S
85-170
120-240
170-340
AQ
AR
AS
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
2SB766 THRU
FM1200-
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Pro
SOD-123+ PACKAGE
Package outline
Features
Outline Drawing
SOT-89
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
code suffix "G"
• RoHS product for packing .181(4.60)
Halogen free product for packing code suffix "H"
Mechanical data.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.061REF
• Terminals :Plated terminals,
solderable per MIL-STD-750
Method 2026 (1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
.055(1.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.154(3.91)
RATINGS
Marking Code
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.167(4.25)
For capacitive load, derate current by 20%
.102(2.60)
.091(2.30)
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120
SYMBOL FM120-MH FM130-MH
12
20
13
30
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum
Average Forward Rectified Current
.047(1.2)
IO
IFSM
Pr
el
.023(0.58)
VRRM
.016(0.40)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Peak
Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
.060TYP
Operating Temperature Range
(1.50)TYP
Storage Temperature Range
.118TYP
(3.0)TYP
Maximum Forward Voltage at 1.0A DC
CHARACTERISTICS
CJ
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
TJ
-55 to +125
.197(0.52)
TSTG
.013(0.32)
-55 to +150
- 65
to +175
.017(0.44)
.014(0.35)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
14
40
@T A=125℃
0.50
0.70
0.85
0.9
0.9
0.5
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
Rev.C
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
2SB766 THRU
FM1200-M
SOT-89
Transistors
1.0APlastic-Encapsulate
SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Prod
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space. Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing capability, low forward voltage drop.
• High current
(3) capability.
• High surge
2SB766 x
–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
CASE:SOT‐89 high-speed switching.
• Ultra
Silicon
epitaxial planar chip, metal silicon junction.
•
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228 FE RANK (3) MIL-STD-19500
CLASSIFICATION OF h
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
WILLAS reserves the right to make changes without notice to any product Ratings at
25℃ ambient temperature unless otherwise specified.
Single
phase
half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
Pr
el
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM120
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking
Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
contained are intended to provide a product description only. "Typical" parameters 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum
Average Forward Rectified Current
and do vary in different applications and actual performance may vary over time. IO
1.0
WILLAS does not assume any liability arising out of the application or Peak
Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed on rated load (JEDEC method)
use of any product or circuit. 40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
TJ
WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range
Storage Temperature Range
TSTG
-55 to +150
- 65 to +175
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200
applications where a failure or malfunction of component or circuitry may directly 0.9
Maximum Forward Voltage at 1.0A DC
0.9
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum
Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal
Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
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