IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability PG-TO220-2-2 • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type Package Marking Pin 1 Pin 2 IDT12S60C PG-TO220-2-2 D12S60C C A Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Continuous forward current IF T C<140 °C 12 RMS forward current I F,RMS f =50 Hz 18 T C=25 °C, t p=10 ms 98 Surge non-repetitive forward current, I F,SM sine halfwave Unit A Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 49 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 410 i²t value ∫i 2dt T C=25 °C, t p=10 ms 48 A2s Repetitive peak reverse voltage V RRM 600 V Diode ruggedness dv/dt dv/ dt VR=0…480V 50 V/ns Power dissipation P tot T C=25 °C 115 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque Rev. 2.0 M3 and M3.5 screws page 1 60 Ncm 2006-03-14 IDT12S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 1.3 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T 1.6mm(0.063 in.) from case for 10s - - 260 °C 600 - - V sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage V DC I R=0.16 mA Diode forward voltage VF I F=12 A, T j=25 °C - 1.5 1.7 I F=12 A, T j=150 °C - 1.7 2.1 V R=600 V, T j=25 °C - 1.5 160 V R=600 V, T j=150 °C - 6 1600 - 30 - nC - - <10 ns pF Reverse current IR µA AC characteristics Total capacitive charge Qc Switching time3) tc V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C Total capacitance C V R=1 V, f =1 MHz - 530 - V R=300 V, f =1 MHz - 70 - V R=600 V, f =1 MHz - 70 - 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Rev. 2.0 Only capacitive charge occuring, guaranteed by design. page 2 2006-03-14 IDT12S60C 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C); T j≤175 °C parameter: R thJC(max) parameter. R thJC(max); V F(max) 35 120 30 100 25 20 I F [A] P tot [W] 80 60 15 40 10 20 5 0 0 25 50 75 100 125 150 175 25 200 50 75 T C [°C] 100 125 150 175 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter: T j 140 40 -55 °C 150 °C 25 °C 175 °C 120 100 °C 30 150 °C 100 80 25 °C I F [A] I F [A] 200 T C [°C] 20 60 -55 °C 40 100 °C 175 °C 10 20 0 0 0 1 2 3 4 V F [V] Rev. 2.0 0 1 2 3 4 5 6 7 V F [V] page 3 2006-03-14 IDT12S60C 5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage average forward current I R=f(V R) P F,AV=f(I F), T C=100 °C, parameter: D =t p/T parameter: T j 60 102 0.1 0.2 0.5 1 50 101 100 I R [µA] P F(AV) [W] 40 30 175 °C 10-1 20 150 °C 100 °C 10-2 10 25 °C -55 °C 10-3 100 0 0 5 10 15 20 25 30 35 200 I F(AV) [A] 300 400 500 600 V R [V] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 101 700 600 500 100 C [pF] Z thJC [K/W] 0.5 0.2 0.1 400 300 0.05 10-1 200 0.02 0.01 100 single pulse 10-2 10-5 0 10-4 10-3 10-2 10-1 100 100 101 102 103 V R[V] t P [s] Rev. 2.0 10-1 page 4 2006-03-14 IDT12S60C 9 Typ. C stored energy 10 Typ. capacitance charge vs. current slope E C=f(V R) Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 15 40 30 E c [µC] Q c [nC] 10 20 5 10 0 0 0 100 200 300 400 500 600 V R [V] Rev. 2.0 100 400 700 1000 di F/dt [A/µs] page 5 2006-03-14 IDT12S60C PG-TO220-2-2: Outline tC Dimensions in mm/inches Rev. 2.0 page 6 2006-03-14 IDT12S60C Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 2006-03-14