BSS123

BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
Graphic symbol
These N-Channel enhancement mode field effect
transistors uses advanced trench technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast
switching performance. These products are particularly
suited for low voltage, low current applications such as:
• Small Servo Motor Control
• Power MOSFET Gate Drivers
• Switching Applications
Features
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• High Drain-Source Voltage Rating
• Totally Lead-Free & Fully RoHS Compliant
• RoHS compliant package
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish Annealed over Alloy 42
Leadframe(Lead Free Plating). Solderable per
MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (Approximate)
Packing & Order Information
3,000/Reel
Publication Order Number: [BSS123]
© Bruckewell Technology Corporation Rev. A -2014
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings (TA=+25°C unless otherwise specified)
Symbol
Characteristic
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
IDM
Value
Unit
100
V
Continuous
±20
V
Continuous
170
mA
Pulsed
680
mA
Value
Unit
Continuous Drain Current (Note 5) VGS = 10V
Thermal Characteristics (TA=+25°C unless otherwise specified)
Symbol
Characteristic
PD
Power Dissipation (Note 5)
300
mW
RθJA
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
417
°C/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Off Characteristics (Note 6)
Symbol
Parameter
Test Conditions
Min
BVDSS
VGS=0 V , ID=250μA
100
Drain-Source Breakdown Voltage
Typ.
IGSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
On Characteristics
Symbol
Parameter
0.1
μA
30
μA
VDS=20V , VGS= 0 V
10
nA
VGS=20V , VDS=0 V
50
nA
VDS=100V , TC= 125°C
@TA=150°C (Note 7)
Test Conditions
Min
Typ.
Max.
Units
VDS=VGS,ID=1mA
0.8
1.4
2.0
V
VGS=10V,ID=0.17A
6.0
VGS=4.5V,ID=0.17A
10
Ω
VGS(TH)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
GFS
Forward Transfer Admittance
VSD
Diode Forward Voltage
VGS=0V,IS=0.34A
Dynamic Characteristics (Note 7)
Symbol
Parameter
Test Conditions
CISS
VDS =10V, ID = 0.17A,
f = 1.0KHz
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Publication Order Number: [BSS123]
Units
V
VDS=100V , VGS= 0 V
IDSS
Max.
VDS=25V, VGS=0V,
f=1.0MHz
80
370
0.84
mS
1.3
V
Min
Typ.
Max.
Units
--
22
60
pF
--
3.5
15
pF
--
2.0
6
pF
© Bruckewell Technology Corporation Rev. A -2014
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
Switching Characteristics (Note 7)
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
--
8
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDS=250 V, ID=0.28A,
--
--
8
ns
td(off)
Turn-Off Delay Time
RG=50Ω , VDD=30 V
--
--
13
ns
tf
Turn-Off Fall Time
--
--
16
ns
Notes:
5. Part mounted on FR-4 board with recommended pad layout,
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Publication Order Number: [BSS123]
© Bruckewell Technology Corporation Rev. A -2014
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
■Characteristics Curve
Publication Order Number: [BSS123]
© Bruckewell Technology Corporation Rev. A -2014
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [BSS123]
© Bruckewell Technology Corporation Rev. A -2014
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