Preliminary MSU1N60 600V N-Channel MOSFET Description The MSU1N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge : 17nC (Typ.) • Extended Safe Operating Area • Lower RDS(ON) : 8.50 Ω (Typ.) @VGS=10V Dimensions in Dimensions in Millimeters Inches • 100% Avalanche Tested • RoHS compliant package Symbol min max min max Packing & Order Information A 2.15 2.45 0.85 0.96 80/Tube ; 4,000/Box A1 1.00 1.40 0.39 0.55 B 1.25 1.75 0.49 0.69 b 0.45 0.75 0.18 0.3 b1 0.65 0.95 0.26 0.37 C 0.38 0.64 0.15 0.25 C1 0.38 0.64 0.15 0.25 D 6.30 6.70 2.48 2.64 D1 5.10 5.50 2.01 2.17 E 5.30 5.70 2.09 2.24 e 2.3 (typ.) 0.91 (typ.) e1 4.4 4.8 1.73 1.89 L 7.4 8.0 2.91 3.15 Graphic symbol Publication Order Number: [MSU1N60] © Bruckewell Technology Corporation Rev. A -2014 Preliminary MSU1N60 600V N-Channel MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V Drain Current -Continuous (TC=25°C) 1 A Drain Current -Continuous (TC=100°C) 0.65 A ID IDM Drain Current Pulsed 4 A EAS Single Pulsed Avalanche Energy 52 mJ EAR Repetitive Avalanche Energy 3 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns Power Dissipation (TC = 25 °C) 30 W 0.23 W/°C -55 to +150 °C 300 °C PD TJ,TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds ●Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Max. RθJc Junction-to-Case 4.2 RθJA Junction-to-Ambient 85.3 °C/W On Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units 2.0 -- 4.0 V -- 8.5 10 Ω VGS Gate Threshold Voltage VDS = VGS , ID = 250μA RDS(ON) Static Drain-Source On-Resistance VGS = 10 V , ID = 5 A Off Characteristics Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS Breakdown Voltage /△TJ Temperature Coefficient IDSS IGSSF IGSSR Units Test Conditions Min Typ. Max. Units VGS = 0 V , ID=250μA 600 -- -- V -- 0.4 -- V/°C -- -- 10 μA VGS = 30 V , VDS = 0 V -- -- 100 nA VGS = -30 V , VDS = 0 V -- -- -100 nA ID = 250μA, Referenced to 25°C Zero Gate Voltage Drain VDS = 600 V , VGS = 0 V Current VDS = 480 V , TC = 125°C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Publication Order Number: [MSU1N60] 100 © Bruckewell Technology Corporation Rev. A -2014 Preliminary MSU1N60 600V N-Channel MOSFET Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units -- 15 35 ns td(on) Turn-On Time tr Turn-On Time VDS = 300 V, ID = 1 A, -- 75 140 ns td(off) Turn-Off Delay Time RG = 25 Ω -- 30 60 ns tf Turn-Off Fall Time -- 35 60 ns Qg Total Gate Charge -- 7.5 9 nC -- 1 -- nC -- 3 -- nC -- 174 340 pF -- 185 370 pF -- 80 160 pF Min Typ. Max. Units Qgs Gate-Source Charge Qgd Gate-Drain Charge CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS = 480 V,ID = 1 A, VGS = 10 V VDS = 25 V, VGS = 0 V, F = 1.0MHz Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current -- -- 1.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 4.0 VSD Source-Drain Diode Forward Voltage IS = 1 A , VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time IS = 1 A , VGS = 0 V -- 420 -- ns Qrr Reverse Recovery Charge diF/dt = 100A/μs -- 0.42 -- μC A Notes; 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=95mH, IAS=1.0A, VDD=50V, RG=50Ω, Starting TJ=25℃ 3. ISD≦1.0A, di/dt≦300A/μs,VDD≦BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2% 5. Essentially Independent of Operating Temperature Publication Order Number: [MSU1N60] © Bruckewell Technology Corporation Rev. A -2014 Preliminary MSU1N60 600V N-Channel MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Publication Order Number: [MSU1N60] © Bruckewell Technology Corporation Rev. A -2014