VS-4EGH06-M3 Datasheet

VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 4 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr and soft
recovery
• 175 °C maximum
temperature
operating
junction
• For PFC CRM/CCM, snubber operation
Cathode
• Low forward voltage drop
Anode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
DO-214AA (SMB)
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
DO-214AA (SMB)
IF(AV)
4A
VR
600 V
VF at IF
1.2 V
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
trr typ.
30 ns
TJ max.
175 °C
Diode variation
Single die
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
600
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TL = 76 °C (1)
IFSM
TJ = 25 °C
Non-repetitive peak surge current
Operating junction and storage temperatures
VALUES
V
4
TJ, TStg
UNITS
55
A
-55 to +175
°C
Note
(1) Mounted on PCB with minimum pad size
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 4 A
-
1.6
1.95
IR = 100 μA
IF = 4 A, TJ = 150 °C
-
1.2
1.4
VR = VR rated
-
-
3
TJ = 150 °C, VR = VR rated
-
-
100
VR = 600 V
-
5.7
-
UNITS
V
μA
pF
Revision: 10-Jul-15
Document Number: 94775
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
trr
MIN.
Reverse recovery charge
-
30
-
-
35
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
-
-
35
TJ = 25 °C
-
22
-
-
37
-
-
3.4
-
-
5.2
-
TJ = 25 °C
-
40
-
TJ = 125 °C
-
103
-
MIN.
TYP.
MAX.
UNITS
°C
TJ = 125 °C
Qrr
UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
IRRM
MAX.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TJ = 125 °C
Peak recovery current
TYP.
IF = 4 A
dIF/dt = 200 A/μs
VR = 390 V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
-55
-
175
Thermal resistance,
junction to case
RthJC (1)
-
-
18
Thermal resistance,
junction to ambient
RthJA (1)
-
-
90
°C/W
0.1
Approximate Weight
g
0.003
Marking device
Case style DO-214AA (SMB)
oz.
4H6
100
100
175 °C
10
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Note
(1) Mounted on PCB with minimum pad size
TJ = 175 °C
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
150 °C
10
125 °C
1
0.1
25 °C
0.01
0.001
0.0001
0.5
1.0
1.5
2.0
2.5
3.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 10-Jul-15
Document Number: 94775
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
8
Average Power Loss (W)
CT - Junction Capacitance (pF)
100
10
7
RMS Limit
6
5
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
4
3
2
1
0
1
0
100
200
300
400
500
0
600
2
3
4
5
6
IF(AV) - Average Forward Current (A)
VR - Reverse Voltage (V)
Fig. 5 - Forward Power Loss Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
200
50
180
45
160
IF = 4 A, 125 °C
40
140
120
trr (ns)
Allowable Case Temperature (°C)
1
100
DC
80
35
30
IF = 4 A, 25 °C
25
60
20
40
typical value
15
20
10
0
0
1
2
3
4
100
6
5
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
Fig. 6 - Typical Reverse Recovery vs. dIF/dt
250
Qrr (nC)
200
IF = 4 A, 125 °C
150
100
IF = 4 A, 25 °C
50
typical value
0
100
1000
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Revision: 10-Jul-15
Document Number: 94775
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-4EGH06-M3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
4
E
G
H
06
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (4 = 4 A)
3
-
Circuit configuration:
E = single diode
4
-
G = SMB package
5
-
Process type,
6
-
Voltage code (06 = 600 V)
7
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
H = hyperfast recovery
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-4EGH06-M3/5BT
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5BT
3200
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95401
Part marking information
www.vishay.com/doc?95472
Packaging information
www.vishay.com/doc?95404
Revision: 10-Jul-15
Document Number: 94775
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMB
DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 95401
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
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Revision: 02-Oct-12
1
Document Number: 91000