VSSB310-E3 Datasheet

VSSB310-E3
www.vishay.com
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS®
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AA (SMB)
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
100 V
MECHANICAL DATA
IFSM
80 A
EAS
50 mJ
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VF at IF = 3.0 A
0.56 V
TJ max.
150 °C
Package
DO-214AA (SMB)
Diode variations
Single die
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UNIT
V3B
Device marking code
Maximum repetitive peak reverse voltage
VSSB310
VRRM
100
V
(1)
3.0
IF (2)
1.9
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH
EAS
50
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Maximum DC forward current
IF
A
Notes
(1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
Revision: 05-Nov-13
Document Number: 89139
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSB310-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST CONDITIONS
PARAMETER
IR = 1.0 mA
Breakdown voltage
MAX.
UNIT
VBR
100 (minimum)
-
V
0.62
0.70
0.56
0.65
TA = 25 °C
1.5
-
μA
TA = 125 °C
1.2
-
mA
7.0
250
μA
3.6
20
mA
230
-
pF
TA = 25 °C
VF (1)
TA = 125 °C
VR = 70 V
Reverse current
IR (2)
TA = 25 °C
VR = 100 V
Typical junction capacitance
TYP.
TA = 25 °C
IF = 3.0 A
Instantaneous forward voltage
SYMBOL
TA = 125 °C
CJ
4.0 V, 1 MHz
V
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VSSB310
RJA (1)
120
RJM (2)
15
UNIT
°C/W
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R
JA - junction to ambient
(2) Units mounted on PCB with 10 mm x 10 mm copper pad areas. R
JM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSSB310-E3/52T
0.096
52T
750
7" diameter plastic tape and reel
VSSB310-E3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES 
(TA = 25 °C unless otherwise curves)
2.4
D = 0.5
2.2
3.5
3.0
2.5
2.0
1.5
1.0
D = 0.8
D = 0.3
2.0
Average Power Loss (W)
Average Forward Rectified Current (A)
4.0
D = 0.2
1.8
1.6
1.4
D = 1.0
D = 0.1
1.2
1.0
T
0.8
0.6
0.4
0.5
D = tp/T
0.2
TM Measured at Terminal
tp
0
0
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 05-Nov-13
Document Number: 89139
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSB310-E3
www.vishay.com
Vishay General Semiconductor
1000
10
TA = 100 °C
TA = 125 °C
1
100
TA = 25 °C
0.1
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
20
30
40
50
60
70
80
90
100
10
1
0.01
0.0001
10
Junction to Ambient
100
0.1
1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.096 (2.44)
0.084 (2.13)
0.220 REF.
0.008 (0.2)
0 (0)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
Revision: 05-Nov-13
Document Number: 89139
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000