MSB15N60

MSB15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MSB15N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-263
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Adapter
• Switching Mode Power Supply
Packing & Order Information
3M000/Reel
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
15
A
Drain Current -Continuous (TC=100°C)
9.5
A
IDM
Drain Current -Pulsed
60
A
IAR
Avalanche Current
15
A
EAS
Single Pulsed Avalanche Energy
245
mJ
EAR
Repetitive Avalanche Energy
24
mJ
dV/dt
Peak Diode Recovery dV/dt
9.8
V/ns
TJ
Storage Temperature
150
°C
ID
Publication Order Number: [MSB15N60]
© Bruckewell Technology Corporation Rev. A -2014
MSB15N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Total Power Dissipation(@TC = 25 °C) 245 W
PD
Value
Unit
300
°C
245
W
2
W/°C
TSTG
-55 to +150
°C
Derating Factor above 25 °C
Operating Junction and Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=15A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RθJC
Thermal Resistance,Junction-to-Case
--
0.93
RθJA
Thermal Resistance,Junction-to-Ambient
--
62.5
Units
°C/W
Static Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
4.0
V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID=250μA
2.0
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V , ID=250μA
600
--
--
V
△BVDSS /△TJ
Breakdown Voltage Temperature
ID = 250μA, Referenced to
25°C
--
0.7
--
V/°C
IDSS
Zero Gate Voltage Drain Current
--
--
VGS = ±30
--
--
±100
nA
VGS =10 V , ID = 7.5 A
--
0.45
0.52
Ω
IGSS
*RDS(ON)
Coefficient
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Dynamic Characteristics
Symbol
Parameter
VDS = 600 V , VGS = 0 V
VDS = 480 V , TC = 125°C
Test Conditions
1
10
uA
Min
Typ.
Max.
Units
--
50
101
ns
td(on)
Turn-On Time
tr
Turn-On Time
VDD = 250 V, ID = 15 A,
--
78
162
ns
td(off)
Turn-Off Delay Time
VGS = 10 V , RG = 9.1 Ω
--
120
261
ns
tf
Turn-Off Fall Time
--
66
128
ns
CISS
Input Capacitance
--
2270
3000
pF
--
300
405
pF
--
23
37
pF
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Publication Order Number: [MSB15N60]
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
© Bruckewell Technology Corporation Rev. A -2014
MSB15N60
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Parameter
Qg
Test Conditions
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V,ID = 15 A,
VGS = 10 V
Min
Typ.
Max.
Units
--
36
60
nC
--
9
--
nC
--
16
--
nC
Min
Typ.
Max.
Units
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS
VD = VG = 0,
--
--
14
ISM
VS = 1.3 V
--
--
60
VSD
IS = 15 A , VGS = 0 V
--
--
1.4
V
trr
IF = 15 A , VGS = 0 V
--
600
--
ns
Qrr
diF/dt=100A/us
--
7.2
--
uC
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Publication Order Number: [MSB15N60]
© Bruckewell Technology Corporation Rev. A -2014
MSB15N60
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MSB15N60]
© Bruckewell Technology Corporation Rev. A -2014