MS12N60

MS12N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS12N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=6600V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Ballast
• Inverter
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box x
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
12
A
Drain Current -Continuous (TC=100°C)
7.2
A
IDM
Pulsed Drain Current
48
A
EAS
Single Pulsed Avalanche Energy
870
mJ
EAR
Repetitive Avalanche Energy
22.5
mJ
IAR
Avalanche Current
12.0
A
dV/dt
Peak Diode Recovery dV/dt
3.5
V/ns
ID
• Drain current limited by maximum junction temperature
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS12N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
PD
Value
Unit
Power Dissipation (TC=25°C)
225
W
Derating Factor above 25 °C
1.78
W
300
°C
-55 to +150
°C
150
°C
Maximum Temperature for Soldering @ Lead at 0.125
TL
in(0.318mm) from case for 10 seconds
TSTG
Operating Junction Temperature
TJ
Storage Temperature
NOTE:
1. TJ=+25°C to +150°C.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=12A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C.
4. IAS=12A, VDD=50V, L=11mH, RG=25Ω, starting TJ=+25°C.
Thermal Characteristics
Symbol
Parameter
Min.
Typ.
Max.
RθJC
Thermal Resistance, Junction-to-Case
--
--
0.56
RθJA
Thermal Resistance, Junction-to-Ambient
--
--
62.5
°C/W
Static Characteristics
Symbol
Parameter
Drain-Source Breakdown
BVDSS
Voltage
Test Conditions
Breakdown Voltage
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
Drain-Source Leakage
VDS = 500 V , VGS = 0 V
Current
VDS = 400 V , TC = 125°C
IGSS
*RDS(ON)
Temperature coefficient
Gate-Source Leakage,
Forward
Static Drain-Source
On-state Resis-tance
660
Max.
Units
--
V
0.5
V
2.0
--
--
--
VGS = ±30 V
--
--
±100
nA
VGS = 10 V , ID = 6.0 A
--
0.53
0.65
Ω
Min
Typ.
Max.
Units
--
48
63
--
8.5
--
--
21
--
Test Conditions
Total Gate Charge
Qgs
Qgs Gate-Source Charge
Qgd
Qgd Gate-Drain Charge(Miller Charge)
Publication Order Number: [MS12N60]
Typ.
600
ID = 250μA, Referenced to 25°C
Dynamic Characteristics
Symbol
Parameter
Qg
Min
VGS = 0 V , ID = 250μA
△BVDSS /△TJ
IDSS
Units
VDS = 250 V,ID = 12 A,
VGS = 10 V
4.0
1
25
V
uA
nC
© Bruckewell Technology Corporation Rev. A -2014
MS12N60
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
--
30
70
ns
td(on)
Turn-on Delay Time
tr
Rise Time
VDS = 325 V, ID = 12 A,
--
85
180
ns
td(off)
Turn-off Delay Time
VGS = 10 V , RG = 25 Ω
--
140
280
ns
tf
Fall Time
--
90
190
ns
CISS
Input Capacitance
--
1760
2290
pF
--
182
235
pF
--
21
28
pF
Min
Typ.
Max.
Units
COSS
Coss Output Capacitance
CRSS
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
IS
VD = VG = 0,
--
--
12
ISM
VS = 1.3 V
--
--
48
VSD
IF = 12 A , VGS = 0
--
--
1.5
V
trr
IF = 12 A , VGS = 0 ,
--
460
--
ns
Qrr
dIF/dt=100A/μs
--
4.9
--
uC
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS12N60
N-Channel Enhancement Mode Power MOSFET
■Characteristics
Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS12N60
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
VARIATION VS TEMPERATURE
FIG.8-ON-RESISTANCE VARIATION VS
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014
MS12N60
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014