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RT8055B
3A, 2MHz, Synchronous Step-Down Converter
General Description
Features
The RT8055B is a high efficiency synchronous, step-down
DC/DC converter. Its input voltage range is from 2.6V to
5.5V and provides an adjustable regulated output voltage
from 0.8V to 5V while delivering up to 3A of output current.
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The RT8055B is operated in forced continuous PWM Mode
which minimizes ripple voltage and reduces the noise and
RF interference.
The RT8055B is available in the WDFN-10L 3x3 package.
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Applications
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Ordering Information
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RT8055B
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Package Type
QW : WDFN-10L 3x3 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
Note :
Richtek products are :
`
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
`
Suitable for use in SnPb or Pb-free soldering processes.
Low RDS(ON) Internal Switches : 100mΩ
Ω
Programmable Frequency : 300kHz to 2MHz
No Schottky Diode Required
0.8V Reference Voltage Allows for Low Output
Voltage
Forced Continuous Mode Operation
100% Duty Cycle Operation
Input Over Voltage Protection
Power Good Output Voltage Indicutor
RoHS Compliant and Halogen Free
Portable Instruments
Battery-Powered Equipment
Notebook Computers
Distributed Power Systems
IP Phones
Digital Cameras
3G/3.5G Data Card
Pin Configurations
(TOP VIEW)
SHDN/RT
GND
LX
LX
PGND
1
2
3
4
5
GND
The internal synchronous low on-resistance power
switches increase efficiency and eliminate the need for
an external Schottky diode. The switching frequency is
set by an external resistor. The 100% duty cycle provides
low dropout operation extending battery life in portable
systems. Current mode operation with external
compensation allows the transient response to be
optimized over a wide range of loads and output capacitors.
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High Efficiency : Up to 95%
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10
9
8
7
6
COMP
FB
PGOOD
VDD
PVDD
WDFN-10L 3x3
Marking Information
K3= : Product Code
K3=YM
DNN
YMDNN : Date Code
DS8055B-03 April 2011
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1
RT8055B
Typical Application Circuit
6
VIN
5V
CIN
22µF
RT8055B
3, 4
PVDD
LX
R3
R4
100k
7
8
ROSC
180k
1
2,11 (Exposed Pad)
5
VOUT1
3.3V/3A
CF
22pF
VDD
FB 9
C1
PGOOD
L1
2µH
PGOOD
COMP
R1
75k
COUT
22µF x 2
R2
24k
10
SHDN/RT
RCOMP
30k
GND
CCOMP
470pF
PGND
Note : Using X5R/X7R Ceramic Capacitors
Table 1. Recommended Component Selsction
VOUT
3.3
2.5
1.8
1.5
1.2
1.0
R1 (kΩ)
75
51
30
21
12
6
R2 (kΩ)
24
24
24
24
24
24
RCOMP (kΩ)
30
27
22
18
15
13
CCOMP (nF)
0.47
0.47
0.47
0.47
0.47
0.47
L1 (μH)
2.2
2.2
2.2
2.2
1.0
1.0
C OUT (μF)
22 x 2
22 x 2
22 x 2
22 x 2
22 x 2
22 x 2
Functional Pin Description
Pin No.
1
Pin Name
Pin Function
Shutdown Control or Frequency Setting Input. Connect a resistor to ground from
SHDN/RT this pin sets the switching frequency. Force this pin to VDD or GND causes the
device to be shut down.
Signal Ground. All small-signal components and compensation components should
2,
11 (Exposed Pad)
GND
be connected to this ground, which in turn connects to PGND at one point. The
exposed pad must be soldered to a large PCB and connected to GND for maximum
power dissipation.
3, 4
LX
Internal Power MOSFET Switches Output. Connect this pin to the inductor.
5
PGND
Power Ground. Connect this pin close to the negative terminal of CIN and COUT.
6
PVDD
Power Supply Input. Decouple this pin to PGND with a capacitor.
7
VDD
8
PGOOD
Power Good Indicator. The pin is an open drain logic output that is pulled to Ground.
9
FB
Feedback Pin. This pin receives the feedback voltage from a resistive divider
connected across the output.
Signal Supply Input. Decouple this pin to GND with a capacitor. Generally, VDD is
equal to PVDD.
Error Amplifier Compensation Point. The current comparator threshold increases
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2
COMP
with this control voltage. Connect external compensation elements to this pin to
stabilize the control loop.
DS8055B-03 April 2011
RT8055B
Function Block Diagram
SHDN/RT
PVDD
ISEN
SD
OSC
Slope
Comp.
COMP
0.8V
EA
FB
OC
Limit
Output
Clamp
Internal
Soft-Star
Driver
0.9V
LX
Control
Logic
0.7V
NISEN
OTP
0.4V
VREF
POR
PGND
N-MOSFET ILIM
PGOOD
GND
VDD
DS8055B-03 April 2011
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3
RT8055B
Absolute Maximum Ratings
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(Note 1)
Supply Input Voltage, VDD, PVDD ---------------------------------------------------------------------------- −0.3V to 6.5V
LX Pin Switch Voltage -------------------------------------------------------------------------------------------- −0.3V to (PVDD + 0.3V)
<30ns ---------------------------------------------------------------------------------------------------------------- −5V to 7.5V
Other I/O Pin Voltages ------------------------------------------------------------------------------------------- −0.3V to 6.5V
LX Pin Switch Current -------------------------------------------------------------------------------------------- 4A
Power Dissipation, PD @ TA = 25°C
WDFN-10L 3x3 ----------------------------------------------------------------------------------------------------- 1.667W
Package Thermal Resistance (Note 2)
WDFN-10L 3x3, θJA ----------------------------------------------------------------------------------------------- 60°C/W
WDFN-10L 3x3, θJC ----------------------------------------------------------------------------------------------- 7.8°C/W
Junction Temperature --------------------------------------------------------------------------------------------- 150°C
Lead Temperature (Soldering, 10 sec.) ----------------------------------------------------------------------- 260°C
Storage Temperature Range ------------------------------------------------------------------------------------ −65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Mode) -------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) ---------------------------------------------------------------------------------------------- 200V
Recommended Operating Conditions
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(Note 4)
Supply Input Voltage ---------------------------------------------------------------------------------------------- 2.6V to 5.5V
Junction Temperature Range ------------------------------------------------------------------------------------ −40°C to 125°C
Ambient Temperature Range ------------------------------------------------------------------------------------ −40°C to 85°C
Electrical Characteristics
(VDD = 3.3V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Voltage Range
VDD
2.6
--
5.5
V
Feedback Reference Voltage
VREF
0.784
0.8
0.816
V
Feedback Leakage Current
IFB
VFB = 3.3V
--
--
0.1
μA
Active, VFB = 0.7V, Not Switching
--
500
--
μA
Shutdown
--
--
1
μA
DC Bias Current
Output Voltage Line Regulation
ΔVLINE
VIN = 2.6V to 5.5V
--
0.1
--
%/V
Output Voltage Load Regulation
ΔVLOAD
VIN = 5V, VOUT = 3.3V,
I OUT = 0A to 3A
--
0.4
--
%
Error Amplifier Transconductance gm
--
400
--
μA/V
Current Sense Transresistance
--
0.4
--
Ω
--
--
1
μA
ROSC = 180kΩ
1.44
1.8
2.16
MHz
Adjustable Switching Frequency
Range
0.3
--
2
MHz
RT Leakage Current
Switching Frequency
RS
SHDN/RT = VIN = 5.5V
Switch On Resistance, High
RDS(ON)_P I SW = 0.3A
--
100
160
mΩ
Switch On Resistance, Low
RDS(ON)_N I SW = 0.3A
--
100
170
mΩ
To be continued
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DS8055B-03 April 2011
RT8055B
Parameter
Peak Current Limit
Symbol
Min
Typ
Max
Unit
3.5
--
--
A
V DD Rising
--
2.4
--
V
V DD Falling
--
2.2
--
V
V SHDN Rising
--
V OUT Falling (Fault)
--
87
--
%V OUT
V OUT Rising (Good)
--
90
--
%V OUT
V OUT Rising (Fault)
--
114
--
%V OUT
V OUT Falling (Good)
--
111
--
%V OUT
ILIM
Under Voltage Lockout
Threshold
Shutdown Threshold
Test Conditions
V SHDN
VIN − 0.85 V IN − 0.4
V
Power Good (PGOOD)
Power Good Threshold
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. θJA is measured in the natural convection at TA = 25°C on a high effective thermal conductivity four layers test board of
JEDEC 51-7 thermal measurement standard. The case point of θJC is on the exposed pad for the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
DS8055B-03 April 2011
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5
RT8055B
Typical Operating Characteristics
Output Voltage vs. Input Voltage
Efficiency vs. Output Current
3.36
100
90
3.35
Output Voltage (V)
Efficiency (%)
80
70
60
50
40
30
20
3.34
3.33
3.32
3.31
10
VIN = 5V, VOUT = 3.3V
IOUT = 0A, VOUT = 3.3V
3.30
0
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.5
3.0
3.7
3.9
4.1
Output Current (A)
4.5
4.7
4.9
5.1
5.3
5.5
Input Voltage (V)
Output Voltage vs. Output Current
VIN UVLO vs. Temperature
3.40
2.50
3.38
2.45
2.40
3.36
VIN UVLO (V)
Output Voltage (V)
4.3
3.34
3.32
3.30
2.35
Rising
2.30
2.25
2.20
Falling
2.15
2.10
3.28
2.05
VIN = 5V, VOUT = 3.3V
3.26
VOUT = 3.3V
2.00
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
-50
-25
0
Output Current (A)
50
75
100
125
Switching Frequency vs. Temperature
Switching Frequency vs. Input Voltage
2.1
2.1
2.0
1.9
1.8
1.7
1.6
VIN = 5V, VOUT = 3.3V
IOUT = 0.3A, fSW = 1.8MHz
1.5
Switching Frequency (MHz)1
Switching Frequency (MHz)1
25
Temperature (°C)
2.0
1.9
1.8
1.7
1.6
VIN = 5V, VOUT = 3.3V
IOUT = 0.3A, fSW = 1.8MHz
1.5
3.5
3.7
3.9
4.1
4.3
4.5
4.7
4.9
Input Voltage (V)
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5.1
5.3
5.5
-50
-25
0
25
50
75
100
125
Temperature (°C)
DS8055B-03 April 2011
RT8055B
Output Current Limit vs. Temperature
6.0
5.5
5.5
Output Current Limit (A)
Output Current Limit (A)
Output Current Limit vs. Input Voltage
6.0
5.0
4.5
4.0
3.5
3.0
2.5
5.0
4.5
4.0
3.5
3.0
2.5
VIN = 5V, VOUT = 3.3V
VOUT = 3.3V
2.0
2.0
3.5
3.7
3.9
4.1
4.3
4.5
4.7
4.9
5.1
5.3
5.5
-50
-25
0
50
75
100
125
Reference Voltage vs. Temperature
0.840
3.38
0.832
3.36
0.824
Reference Voltage (V)
Output Voltage (V)
Output Voltage vs. Temperature
3.40
3.34
3.32
3.30
3.28
3.26
3.24
VIN = 5V, VOUT = 3.3V
IOUT = 0A
3.22
25
Temperature (°C)
Input Voltage (V)
0.816
0.808
0.800
0.792
0.784
0.776
0.768
0.760
3.20
-50
-25
0
25
50
75
100
125
-50
0
25
50
75
Temperature (°C)
Output Ripple
Output Ripple
VLX
(5V/Div)
VLX
(5V/Div)
VOUT
(5mV/Div)
VOUT
(5mV/Div)
VIN = 5V, VOUT = 3.3V
IOUT = 3A
Time (500ns/Div)
DS8055B-03 April 2011
-25
Temperature (°C)
100
125
VIN = 5V, VOUT = 3.3V
IOUT = 0A
Time (500ns/Div)
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RT8055B
Load Transient Response
Load Transient Response
VOUT
(200mV/Div)
VOUT
(200mV/Div)
IOUT
(1A/Div)
IOUT
(1A/Div)
VIN = 5V, VOUT = 3.3V
IOUT = 0A to 3A
Time (100μs/Div)
VIN = 5V, VOUT = 3.3V
IOUT = 0A to 2A
Time (100μs/Div)
Power On from VIN
VIN
(2V/Div)
VOUT
(2V/Div)
PGOOD
(2V/Div)
VIN = 5V, VOUT = 3.3V
Time (1ms/Div)
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DS8055B-03 April 2011
RT8055B
The basic RT8055B application circuit is shown in Typical
Application Circuit. External component selection is
determined by the maximum load current and begins with
the selection of the inductor value and operating frequency
followed by CIN and COUT.
Output Voltage Setting
The output voltage is set by an external resistive divider
according to the following equation :
VOUT = VREF × ⎛⎜1 + R1 ⎞⎟
⎝ R2 ⎠
where VREF equals to 0.8V typical.
The resistive divider allows the FB pin to sense a fraction
of the output voltage as shown in Figure 1.
VOUT
R1
FB
RT8055B
R2
GND
Figure 1. Setting the Output Voltage
Soft-Start
The RT8055B contains an internal soft-start clamp that
gradually raises the clamp on the COMP pin.
The operating frequency of the RT8055B is determined
by an external resistor that is connected between the
SHDN/RT pin and GND. The value of the resistor sets the
ramp current that is used to charge and discharge an
internal timing capacitor within the oscillator. The RT
resistor value can be determined by examining the
frequency vs. RRT curve. Although frequencies as high as
2MHz are possible, the minimum on-time of the RT8055B
imposes a minimum limit on the operating duty cycle.
The minimum on-time is typically 110ns. Therefore, the
minimum duty cycle is equal to 100 x 110ns x f (Hz).
3.0
Switching Frequency (MHz)1
Application Information
2.5
RRT = 180k for 1.8MHz
2.0
1.5
1.0
0.5
0.0
0
200
400
600
800
1000
ROSC (K
(kΩ))
Figure 2
Power Good Output
100% Duty Cycle Operation
The power good output is an open drain output and requires
a pull up resister. When the output voltage is 14% above
or 13% below its set voltage, PGOOD will be pulled low. It
is held low until the output voltage returns to within the
allowed tolerances once more. In Soft-Start, PGOOD is
actively held low and is allowed to transition high until the
Soft-Start is finished and the output voltage reaches 90%
of its set voltage.
When the input supply voltage decreases toward the output
voltage, the duty cycle increases toward the maximum
on-time. Further reduction of the supply voltage forces
the main switch to remain on for more than one cycle
eventually reaching 100% duty cycle.
Operating Frequency
Low Supply Operation
Selection of the operating frequency is a tradeoff between
efficiency and component size. High frequency operation
allows the use of smaller inductor and capacitor values.
Operation at lower frequency improves efficiency by
reducing internal gate charge and switching losses but
requires larger inductance and/or capacitance to maintain
low output ripple voltage.
The RT8055B is designed to operate down to an input
supply voltage of 2.6V. One important consideration at
low input supply voltages is that the RDS(ON) of the PChannel and N-Channel power switches increases. The
user should calculate the power dissipation when the
RT8055B is used at 100% duty cycle with low input
voltages to ensure that thermal limits are not exceeded.
DS8055B-03 April 2011
The output voltage will then be determined by the input
voltage minus the voltage drop across the internal
P-MOSFET and the inductor.
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9
RT8055B
Slope Compensation and Inductor Peak Current
CIN and COUT Selection
Slope compensation provides stability in constant
frequency architectures by preventing sub-harmonic
oscillations at duty cycles greater than 50%. It is
accomplished internally by adding a compensating ramp
to the inductor current signal. Normally, the maximum
inductor peak current is reduced when slope compensation
is added. In the RT8055B, however, separated inductor
current signals are used to monitor over current condition.
This keeps the maximum output current relatively constant
regardless of duty cycle.
The input capacitance, C IN, is needed to filter the
trapezoidal current at the source of the top MOSFET. To
prevent large ripple voltage, a low ESR input capacitor
sized for the maximum RMS current should be used. RMS
current is given by :
Short Circuit Protection
When the output is shorted to ground, the inductor current
decays very slowly during a single switching cycle. A
current runaway detector is used to monitor inductor
current. As current increasing beyond the control of current
loop, switching cycles will be skipped to prevent current
runaway from occurring.
Inductor Selection
The inductor value and operating frequency determine the
ripple current according to a specific input and output
voltage. The ripple current ΔIL increases with higher VIN
and decreases with higher inductance.
V
V
ΔIL = ⎡⎢ OUT ⎤⎥ × ⎡⎢1− OUT ⎤⎥
VIN ⎦
⎣ f ×L ⎦ ⎣
Having a lower ripple current reduces not only the ESR
losses in the output capacitors but also the output voltage
ripple. However, it requires a large inductor to achieve this
goal.
For the ripple current selection, the value of ΔIL = 0.4(IMAX)
will be a reasonable starting point. The largest ripple
current occurs at the highest VIN. To guarantee that the
ripple current stays below the specified maximum, the
inductor value should be chosen according to the following
equation :
⎡ VOUT ⎤ ⎡
VOUT ⎤
L =⎢
× ⎢1 −
⎥
⎥
⎣ f × ΔIL(MAX) ⎦ ⎣ VIN(MAX) ⎦
The inductor's current rating (caused a 40°C temperature
rising from 25°C ambient) should be greater than the
maximum load current and its saturation current should
be greater than the short circuit peak current limit.
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10
V
IRMS = IOUT(MAX) OUT
VIN
VIN
−1
V OUT
This formula has a maximum at VIN = 2VOUT, where
I RMS = I OUT/2. This simple worst-case condition is
commonly used for design because even significant
deviations do not offer much relief. Choose a capacitor
rated at a higher temperature than required.
Several capacitors may also be paralleled to meet size or
height requirements in the design.
The selection of COUT is determined by the Effective Series
Resistance (ESR) that is required to minimize voltage ripple
and load step transients, as well as the amount of bulk
capacitance that is necessary to ensure that the control
loop is stable. Loop stability can be checked by viewing
the load transient response as described in a later section.
The output ripple, ΔVOUT, is determined by :
⎡
1 ⎤
ΔVOUT ≤ ΔIL ⎢ESR +
8fCOUT ⎥⎦
⎣
The output ripple is highest at maximum input voltage
since ΔIL increases with input voltage. Multiple capacitors
placed in parallel may be needed to meet the ESR and
RMS current handling requirements. Dry tantalum, special
polymer, aluminum electrolytic and ceramic capacitors are
all available in surface mount packages. Special polymer
capacitors offer very low ESR but have lower capacitance
density than other types. Tantalum capacitors have the
highest capacitance density but it is important to only
use types that have been surge tested for use in switching
power supplies. Aluminum electrolytic capacitors have
significantly higher ESR but can be used in cost-sensitive
applications provided that consideration is given to ripple
current ratings and long term reliability. Ceramic capacitors
have excellent low ESR characteristics but can have a
high voltage coefficient and audible piezoelectric effects.
The high Q of ceramic capacitors with trace inductance
can also lead to significant ringing.
DS8055B-03 April 2011
RT8055B
Higher values, lower cost ceramic capacitors are now
becoming available in smaller case sizes. Their high ripple
current, high voltage rating and low ESR make them ideal
for switching regulator applications. However, care must
be taken when these capacitors are used at the input and
output. When a ceramic capacitor is used at the input
and the power is supplied by a wall adapter through long
wires, a load step at the output can induce ringing at the
input, VDD. At best, this ringing can couple to the output
and be mistaken as loop instability. At worst, a sudden
inrush of current through the long wires can potentially
cause a voltage spike at VIN large enough to damage the
part.
2.00
Maximum Power Dissipation (W)
Using Ceramic Input and Output Capacitors
Four Layers PCB
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 3. Derating Curves for RT8055B Package
Thermal Considerations
Layout Considerations
For continuous operation, do not exceed absolute
maximum operation junction temperature. The maximum
power dissipation depends on the thermal resistance of
IC package, PCB layout, the rate of surroundings airflow
and temperature difference between junction to ambient.
The maximum power dissipation can be calculated by
following formula :
Follow the PCB layout guidelines for optimal performance
of RT8055B.
`
A ground plane is recommended. If a ground plane layer
is not used, the signal and power grounds should be
segregated with all small-signal components returning
to the GND pin at one point that is then connected to
the PGND pin close to the IC. The exposed pad should
be connected to GND.
`
Connect the terminal of the input capacitor(s), CIN, as
close as possible to the PVDD pin. This capacitor
provides the AC current into the internal power
MOSFETs.
`
LX node is with high frequency voltage swing and should
be kept within small area. Keep all sensitive small-signal
nodes away from the LX node to prevent stray capacitive
noise pick-up.
`
Flood all unused areas on all layers with copper.
Flooding with copper will reduce the temperature rise
of powercomponents.
PD(MAX) = (TJ(MAX) − TA ) / θJA
Where T J(MAX) is the maximum operation junction
temperature, TA is the ambient temperature and the θJA is
the junction to ambient thermal resistance.
For recommended operating conditions specification of
RT8055B, the maximum junction temperature is 125°C
and TA is the maximum ambient temperature. The junction
to ambient thermal resistance θJA is layout dependent.
For WDFN-10L 3x3 packages, the thermal resistance θJA
is 60°C/W on the standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25°C
can be calculated by following formula :
PD(MAX) = (125°C − 25°C) / (60°C/W) = 1.667W for
WDFN-10L 3x3 package
The maximum power dissipation depends on operating
ambient temperature for fixed T J(MAX) and thermal
resistance θJA. For RT8055B package, the Figure 3 of
derating curves allows the designer to see the effect of
rising ambient temperature on the maximum power
dissipation allowed.
DS8055B-03 April 2011
You can connect the copper areas to any DC net (PVDD,
VDD, VOUT, PGND, GND, or any other DC rail in your
system).
`
Connect the FB pin directly to the feedback resistors.
The resistor divider must be connected between VOUT
and GND.
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11
RT8055B
GND
VOUT
COUT
Place the feedback
and compensation
components as close
to the IC as possible
CCOMP
ROSC
SHDN/RT
GND
L1
LX
LX
PGND
1
2
3
4
5
RCOMP
10
9
GND
LX should be connected
to Inductor by wide and
short trace, keep sensitive
components away from
this trace.
8
11
7
6
R2
COMP
FB
PGOOD
VDD
PVDD
CF
VOUT
C1 R1
GND
R3
CIN
GND
VIN
Place the input and output
capacitors as close to the IC as
possible
Figure 4. PCB Layout Guide
Recommended component selection for Typical Application
Component Supplier Series
TAIYO YUDEN
NR 8040
Table 2. Inductors
Inductance (μH) DCR (mΩ) Current Rating (mA) Dimensions (mm)
2
9
7800
8x8x4
Table 3. Capacitors for CIN and COUT
Component Supplier
TDK
TDK
Panasonic
Panasonic
TAIYO YUDEN
TAIYO YUDEN
TAIYO YUDEN
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Part No.
C3225X5R0J226M
C2012X5R0J106M
ECJ4YB0J226M
ECJ4YB1A106M
LMK325BJ226ML
JMK316BJ226ML
JMK212BJ106ML
Capacitance (μF)
22
10
22
10
22
22
10
Case Size
1210
0805
1210
1210
1210
1206
0805
DS8055B-03 April 2011
RT8055B
Outline Dimension
D2
D
L
E
E2
1
e
SEE DETAIL A
b
2
1
2
1
A
A1
A3
DETAIL A
Pin #1 ID and Tie Bar Mark Options
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.180
0.300
0.007
0.012
D
2.950
3.050
0.116
0.120
D2
2.300
2.650
0.091
0.104
E
2.950
3.050
0.116
0.120
E2
1.500
1.750
0.059
0.069
e
L
0.500
0.350
0.020
0.450
0.014
0.018
W-Type 10L DFN 3x3 Package
Richtek Technology Corporation
Richtek Technology Corporation
Headquarter
Taipei Office (Marketing)
5F, No. 20, Taiyuen Street, Chupei City
5F, No. 95, Minchiuan Road, Hsintien City
Hsinchu, Taiwan, R.O.C.
Taipei County, Taiwan, R.O.C.
Tel: (8863)5526789 Fax: (8863)5526611
Tel: (8862)86672399 Fax: (8862)86672377
Email: [email protected]
Information that is provided by Richtek Technology Corporation is believed to be accurate and reliable. Richtek reserves the right to make any change in circuit
design, specification or other related things if necessary without notice at any time. No third party intellectual property infringement of the applications should be
guaranteed by users when integrating Richtek products into any application. No legal responsibility for any said applications is assumed by Richtek.
DS8055B-03 April 2011
www.richtek.com
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