INFINEON SPA07N65C3

SPP07N65C3, SPI07N65C3
SPA07N65C3
CoolMOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
PG-TO220-3
V DS
650
V
RDS(on)
0.6
Ω
ID
7.3
A
PG-TO262-3-1 PG-TO220
• Extreme dv/dt rated
2
• High peak current capability
1
• Improved transconductance
2
3
1
23
P-TO220-3-31
P-TO220-3-1
• PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)
Type
SPP07N65C3
Package
PG-TO220
Marking
07N65C3
SPI07N65C3
PG-TO262-3
07N65C3
SPA07N65C3
PG-TO220-3
07N65C3
Maximum Ratings
Symbol
Parameter
Unit
Value
SPP_I
SPA
A
ID
Continuous drain current
TC = 25 °C
7.3
7.31)
TC = 100 °C
4.6
4.61)
Pulsed drain current, tp limited by Tjmax
ID puls
21.9
21.9
A
Avalanche energy, single pulse
EAS
230
230
mJ
EAR
0.5
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
2.5
2.5
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
83
32
Operating and storage temperature
T j , Tstg
ID=1.5A, VDD =50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=2.5A, VDD =50V
Rev. 1.92
Page 1
-55...+150
W
°C
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 480 V, ID = 7.3 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1.5
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.9
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm2 cooling area 3)
-
35
-
-
-
260
Soldering temperature, wavesoldering
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T j=25°C unless otherwise specified
Symbol
Conditions
Parameter
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=2.5A
Values
Unit
min.
typ.
max.
650
-
-
-
730
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=350μA, VGS=VDS
Zero gate voltage drain current
I DSS
VDS=600V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 1.92
RG
μA
Tj=25°C
-
0.5
1
Tj=150°C
-
-
100
VGS=20V, VDS=0V
-
-
100
Ω
VGS=10V, ID=4.6A
Tj=25°C
-
0.54
0.6
Tj=150°C
-
1.46
-
f=1MHz, open drain
-
0.8
-
Page 2
nA
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
6
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=4.6A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
790
-
Output capacitance
Coss
f=1MHz
-
260
-
Reverse transfer capacitance
Crss
-
16
-
-
30
-
-
55
-
Effective output capacitance,4) Co(er)
energy related
V GS=0V,
V DS=0V to 480V
Effective output capacitance,5) Co(tr)
time related
Turn-on delay time
td(on)
V DD=380V, V GS=0/13V,
-
6
-
Rise time
tr
ID=7.3A, RG=12Ω,
-
3.5
-
Turn-off delay time
td(off)
Tj=125°C
-
60
100
Fall time
tf
-
7
15
-
3
-
-
9.2
-
-
21
27
-
5.5
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=480V, ID=7.3A
VDD=480V, ID=7.3A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=7.3A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
5C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
Rev. 1.92
Page 3
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Electrical Characteristics
Symbol
Parameter
Inverse diode continuous
IS
Conditions
Values
Unit
min.
typ.
max.
-
-
7.3
-
-
21.9
TC=25°C
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=480V, IF=IS ,
-
400
600
ns
Reverse recovery charge
Qrr
diF/dt=100A/μs
-
4
-
μC
Peak reverse recovery current
Irrm
-
28
-
A
Peak rate of fall of reverse
dirr /dt
-
800
-
A/μs
Tj=25°C
recovery current
Typical Transient Thermal Characteristics
Symbol
Value
Unit
SPP_I
SPA
Rth1
0.024
0.024
Rth2
0.046
Rth3
Symbol
Value
Unit
SPP_I
SPA
Cth1
0.00012
0.00012
0.046
Cth2
0.0004578
0.0004578
0.085
0.085
Cth3
0.000645
0.000645
Rth4
0.308
0.195
Cth4
0.001867
0.001867
Rth5
0.317
0.45
Cth5
0.004795
0.007558
Rth6
0.112
2.511
Cth6
0.045
0.412
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 1.92
Page 4
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
1 Power dissipation
2 Power dissipation FullPAK
Ptot = f (TC)
Ptot = f (TC)
100
SPP07N65C3
34
W
W
28
80
24
Ptot
Ptot
70
60
50
20
16
40
12
30
8
20
4
10
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TC
160
TC
3 Safe operating area
4 Safe operating area FullPAK
ID = f ( V DS )
ID = f (VDS)
parameter : D = 0 , TC =25°C
parameter: D = 0, TC = 25°C
10
°C
2
10 2
10 1
10 1
ID
A
ID
A
10 0
10 -1
10 -2 0
10
Rev. 1.92
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
1
10 -1
10
2
10
V
VDS
3
10 -2 0
10
Page 5
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
1
10
2
10
V
VDS
2010-12-21
3
SPP07N65C3, SPI07N65C3
SPA07N65C3
5 Transient thermal impedance
6 Transient thermal impedance FullPAK
ZthJC = f (t p)
ZthJC = f (t p)
parameter: D = tp/T
parameter: D = tp/t
10
1
10 1
K/W
K/W
ZthJC
10 0
ZthJC
10 0
10 -1
10 -1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3 -7
10
10
-6
10
-5
10
-4
10
-3
10 -2
10
s
tp
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -3 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
-1
1
s 10
tp
7 Typ. output characteristic
8 Typ. output characteristic
ID = f (VDS); Tj=25°C
ID = f (VDS); Tj=150°C
parameter: tp = 10 μs, VGS
parameter: tp = 10 μs, VGS
13
24
A
20V
10V
8V
A
20V
8V
6.5V
11
7V
6V
9
6,5V
16
ID
ID
10
8
5.5V
7
12
6V
6
5V
5
8
5,5V
4
4.5V
3
5V
4
2
4,5V
0
0
5
10
15
25
VDS
0
0
2
4
6
8
10 12 14 16 18 20 22 V 25
VDS
V
Rev. 1.92
4V
1
Page 6
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
9 Typ. drain-source on resistance
10 Drain-source on-state resistance
RDS(on)=f(ID)
RDS(on) = f (Tj)
parameter: Tj=150°C, VGS
parameter : ID = 4.6 A, VGS = 10 V
10
Ω
3.4
4.5V
2.8
RDS(on)
RDS(on)
Ω
4V
8
SPP07N65C3
7
5V
6
6V
6.5V
8V
20V
5
5.5V
4
2.4
2
1.6
1.2
3
98%
0.8
2
typ
0.4
1
0
0
2
4
6
8
10
12
0
-60
A 15
ID
-20
20
60
100
180
Tj
11 Typ. transfer characteristics
12 Typ. gate charge
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
VGS = f (Q Gate)
parameter: ID = 7.3 A pulsed
parameter: tp = 10 μs
°C
24
16
SPP07N65C3
A
V
25°C
20
12
VGS
ID
18
16
14
0,2 VDS max
10
0,8 VDS max
150°C
12
8
10
6
8
6
4
4
2
2
0
0
Rev. 1.92
2
4
6
8
10
12
14
16
0
0
V 20
VGS
4
8
12
16
20
24
28 nC
34
Q Gate
Page 7
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
13 Forward characteristics of body diode
14 Typ. switching time
IF = f (VSD)
t = f (ID), inductive load, T j=125°C
parameter: Tj , tp = 10 μs
par.: V DS=380V, VGS=0/+13V, R G=12Ω
2 SPP07N65C3
10
90
ns
A
td(off)
70
10 1
t
IF
60
50
40
10 0
30
tf
td(on)
tr
Tj = 25 °C typ
Tj = 150 °C typ
20
Tj = 25 °C (98%)
10
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
2.4 V
0
0
3
1
2
3
4
5
6
VSD
A
ID
15 Typ. switching time
16 Typ. drain current slope
t = f (RG), inductive load, Tj=125°C
di/dt = f(R G), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3 A
par.: V DS=380V, VGS=0/+13V, ID=7.3A
500
8
3000
ns
A/μs
400
di/dt
t
350
300
250
2000
1500
td(off)
200
di/dt(on)
1000
150
td(on)
tf
tr
100
500
di/dt(off)
50
0
0
Rev. 1.92
20
40
60
80
100
0
0
Ω 130
RG
Page 8
20
40
60
80
100
Ω 130
RG
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
17 Typ. drain source voltage slope
18 Typ. switching losses
dv/dt = f(RG), inductive load, Tj = 125°C
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3A
par.: V DS=380V, VGS=0/+13V, R G=12Ω
100
0.025
V/ns
diode commutation losses.
mWs
80
70
E
dv/dt
*) E on includes SDP06S60
60
50
0.015
dv/dt(on)
40
Eoff
0.01
30
20
0.005
Eon*
dv/dt(off)
10
0
0
20
40
60
80
Ω
0
0
120
1
2
3
RG
19 Typ. switching losses
20 Avalanche SOA
E = f(RG), inductive load, Tj=125°C
IAR = f (tAR)
par.: VDS=380V, VGS=0/+13V,ID=11A
par.: Tj ≤ 150 °C
0.2
mWs
4
5
6
A
ID
8
*) Eon includes SDP06S60
diode commutation losses.
0.16
E
0.14
0.12
0.1
Eoff
0.08
0.06
Eon*
0.04
0.02
0
0
Rev. 1.92
20
40
60
80
100
Ω 130
RG
Page 9
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
21 Avalanche energy
22 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
par.: ID = 1.5 A, V DD = 50 V
785
260
mJ
SPP07N65C3
V
220
745
V(BR)DSS
EAS
200
180
160
725
705
140
685
120
100
665
80
645
60
625
40
605
20
0
20
40
60
80
100
120
°C
585
-60
160
-20
20
60
100
°C
Tj
180
Tj
23 Avalanche power losses
24 Typ. capacitances
PAR = f (f )
C = f (VDS)
parameter: E AR=0.5mJ
parameter: V GS=0V, f=1 MHz
10 4
500
pF
W
Ciss
C
PAR
10
3
300
10 2
Coss
200
10 1
100
0 4
10
10
5
MHz
10
6
10 0
0
100
200
300
400
V
600
VDS
f
Rev. 1.92
Crss
Page 10
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
25 Typ. Coss stored energy
Eoss=f(VDS)
5.5
μJ
4.5
Eoss
4
3.5
3
2.5
2
1.5
1
0.5
0
0
100
200
300
400
V
600
VDS
Definition of diodes switching characteristics
Rev. 1.92
Page 11
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
PG-TO220-3
Rev. 1.92
Page 12
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
PG-TO-220-3 (FullPAK)
Rev. 1.92
Page 13
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
PG-TO262-3, PG-TO262-3 (I²-PAK)
Rev. 1.92
Page 14
2010-12-21
SPP07N65C3, SPI07N65C3
SPA07N65C3
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.92
Page 15
2010-12-21